Infrared Photoelectric Sensor

Silicon Pin photodiodes S1336-44BQ It is suitable for precise photometry in the ultraviolet to near-infrared wavelength range Features - High sensitivity in the ultraviolet band - Low capacitance - High reliability Maximum Sensitivity Wavelength (Typical) 960 nm Light sensitivity (typical) 0.5 A/W Dark current (max) 50 pA Rise Time (Typical) 0.5 μs Junction Capacitance (typical) 150 pF Noise equivalent power (typical) 1.0×10-14 W/Hz1/2 Silicon Pin photodiodes S1336-44BK It is

Product Description: YJJ S8745-01 S8746-01 Silicon Photodiodes With Preamplifier Are Used For Low-Light Measurement Features: photodiode and the preamplifier are integrated with feedback resistors and capacitors. This is a low-noise sensor, consisting of a silicon photodiode, an operational amplifier, feedback resistors and capacitors, all integrated into a small package. By simply connecting it to the power supply, it can be used for low-light measurement, such as in

Product Description: YJJ G12181-003A Non-cooled InGaAs PIN Photodiode Can Be Used To Detect Sizes Of Various Light-Sensitive Areas Features: Sensitive area: φ1mm Product characteristics Low noise Low junction capacitance Low dark current Sensitive area: φ1mm Detailed parameter The sensitive area is φ1mm The number of pixels is 1 Encapsulation Metal Encapsulation type: TO-18 Cooling mode Non-cooled Spectral response range is 0.9 to 1.7 μm The peak sensitivity wavelength

Product Description: YJJ S2386-5K Analytical Equipment Optical Measurement Equipment Japanese Photodiodes Features: Suitable for the visible light to near-infrared wavelength range, universal photometer Characteristics - High sensitivity in the near-infrared band - Low dark current - High reliability - Excellent linearity Detailed parameters Light-receiving surface 2.4 × 2.4 mm Package Aluminum Package category TO-5 Cooling Non-cooled type Reverse voltage (maximum value) 30 V

Product Description: YJJ S6967 S6967-01 Silicon PIN Photodiode Plastic SIP Package For Detection In Visible Light To Near-Infrared Range Features: Plastic SIP (Single In-line Package) S6967 is a silicon PIN photodiode with a large light-receiving surface, molded into a transparent plastic SIP, used for detecting the visible light to near-infrared range. This silicon PIN photodiode features high sensitivity, fast response and a large light-receiving surface. Characteristics -

EMIRS200_AT01T_BR090 Thermal MEMS Based Infrared Source TO39 Package Infrared Source Axetris infrared (IR) sources are micro-machined,electrically modulated thermal infrared emitters featuring true blackbody radiation characteristics, low power consumption, high emissivity and a long lifetime. The appropriate design is based on a resistive heating element deposited onto a thin dielectric membrane which is suspended on a micro-machined silicon structure. Specification:

Product Description: YJJ S3072 Silicon PIN Photodiode Is Used for High Speed Pulse Light Detection in Space Optical Transmission Features: Large-area high-speed silicon PIN photodiode S3072 is a silicon PIN photodiode with a relatively large light-receiving surface. However, it can provide excellent frequency response at 45 MHz. This photodiode is suitable for space optical transmission (free-space optical components) and high-speed pulse light detection. Characteristics -

Product Description: YJJ S10227-10 Small Resin Sealed CMOS Linear Array Image Sensor for Industrial Applications Features: Small resin-sealed CMOS image sensor Characteristics - Miniaturization, high cost-effectiveness - Pixel pitch: 12.5 μm, pixel height: 250 μm - 512 pixels - 5 V single power supply - Signal data rate: maximum 5 MHz - Synchronous charge integration - Shutter function - High sensitivity, low dark current, low noise - Built-in timing generation circuit allows

S6428-01 Si Photodiodes RGB Color Sensor Plastic Material Features -Plastic package (6 × 8 mm) -Spectral response range: 400 to 540 nm (λp=460 nm) -Insensitive to near IR range -High sensitivity: 0.22 A/W Typ. (λ=λp) -Low dark current Applications White balance adjustment Color identification Projector and Ty brightness level detection Color control Light source color temperature detection Specification: Spectral response range 400-540nm Peak sensitivity wavelength 460nm

S2386-18K Si Photodiodes For Visible to Near IR General Purpose Photometry High Sensitivity Features High sensitivity in visible to near infrared range Low dark current High reliability Applications Analytical instruments Optical measurement equipment Superior linearity Applications Analytical instruments Optical measurement equipment Specification: Photosensitive Area Size 1.1*1.1mm Spectral Response Range 320 to 1100 Peak Sensivity 960nm Photosensitivity 0.6 Short Circuits

S1337-1010BR Si Photodiode For UV to IR Precision Photometry Low Capacitance Features: High uv sensitivity: QE75% (2=200 nm) Low capacitance Applications Analytical equipment Optical measurement equipment Specification: Reverse 5V Operating Temperature -20 to +60℃ Storage Temperature -20 to +80℃

BPW21R Planar Silicon PN Photodiode Low Dark Current TO-5 Package FEATURES • Package type: leaded • Package form: TO-5 • Dimensions (in mm): Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • Adapted to human eye responsivity • Angle of half sensitivity: ϕ = ± 50° • Hermetically sealed package • Cathode connected to package • Flat glass window • Low dark current • High shunt resistance • High linearity • Compliant to RoHS Directive 2002/95/EC and in

LHI778 Infrared Thermoelectric Sensor For Human - body Movement Detectors Product Features: It has a TO - 5 metal housing and different window sizes are available6. The LHI778 is designed to meet low - cost requirements and is equipped with a small - sized optical window. It is a dual - element detector, which includes a dual - element pyro - electric ceramic element with a FET in source - follower connection. It provides high responsivity, excellent common - mode performance

AS907CCA Infrared Thermopile Sensor TO-46 Packing Differential Voltage Output Infrared thermopile sensor * MEMS thermopile technology * Fast response * Non-contact infrared temperature measurement * With NTC compensation * TO-46 metal tube package * Widely used AS907CCA is an infrared thermopile sensor with differential voltage output, suitable for non-contact temperature measurement scenarios, such as refrigerators, car air conditioners, indoor heating, household appliances,

T15770 Infrared photoelectric sensor Uses: Flame Detection: It is mainly used to detect the infrared radiation of flames. It has a fast response to the specific wavelength of 4.45 μm in the flame spectrum, which can effectively identify the presence of flames and is widely used in fire - fighting equipment and safety monitoring systems. Industrial Automation: In industrial production processes, it can be used to monitor the combustion state of furnaces or detect the presence

Product Description: S2386-44k Silicon Photodiode Is Highly Sensitive From Visible To Near Infrared Band Features: Suitable for visible light to near infrared band, universal photometric determination Product features ● High sensitivity in visible to near infrared band ● Low dark current ● High reliability ● High linearity Junction capacitance (typical value) 1600 pF Measurement condition TYP.TA =25 ℃, Unless otherwise noted,Photosensitivity: λ=960 nm, Dark current: VR=10 mV,

Product Description: S1227-66BR Silicone Photodiode Resin Potting Model Is Suitable For Precision Photometry From Ultraviolet To Visible Light Features: Receiving surface 5.8 × 5.8 mm Encapsulated ceramics Package category -- Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 340 to 1000 nm Maximum sensitivity wavelength (typical value) 720 nm Photosensitivity (typical value) 0.43 A/W Dark current (Max.) 20 pA Rise time (typical value) 2 μs

Product Description: S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band Features: Detailed parameter Receiving surface 10 × 10 mm Encapsulated ceramics Package category -- Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 190 to 1000 nm Maximum sensitivity wavelength (typical value) 720 nm Photosensitivity (typical value) 0.36A /W Dark current (Max.) 50 pA

Product Description: Suitable for precise photometric determination in the ultraviolet to visible light band; Suppress near-infrared sensitivity Characteristics- High ultraviolet sensitivity: QE = 75% (λ = 200 nm)Suppress near-infrared sensitivityLow dark currentHigh reliability Features: Product Name: Infrared Photoelectric Sensor S1226-5BQ Number of pixels: 1 Dark current (maximum): 5 PA Package: Metal Package type: TO-5 Maximum sensitivity wavelength (typical): 720 Nm

Product Description: S1337-33BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands Features: Suitable for precise photometry in ultraviolet to infrared bands Receiving surface 2.4 × 2.4 mm Encapsulated ceramics Package category -- Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 340 to 1100 nm Maximum sensitivity wavelength (typical value) 960 nm Photosensitivity (typical value) 0.62 A/W Dark current (Max.)