Infrared Photoelectric Sensor

High sensitivity silicon photodiode for visible light detection. Features 380-780nm spectral range, 550nm peak wavelength, and fast 0.5μs rise time. Metal package with CIE filter. Ideal for optical measurement and environmental monitoring. Custom options available.

High-sensitivity silicon photodiode with 5.9x1.1mm receiving surface, 190-1000nm spectral range, and 0.36A/W photosensitivity. Features low dark current (5pA), fast 0.5μs rise time, and ceramic封装. Ideal for precision visible light detection with quartz window option.

High-sensitivity silicon photodiodes for precise UV to IR photometry. Features low capacitance, fast rise time (0.2-1 μs), and low noise. Ceramic package. Ideal for industrial and scientific applications.

High sensitivity and low noise UV to visible range APD. Features 620nm peak sensitivity, 900MHz cutoff frequency, and 150V breakdown voltage. Ideal for precision detection with metal TO-18 package and low dark current.

High UV sensitivity with 75% QE at 200nm and suppressed NIR sensitivity. Low dark current of 5pA, fast 0.5μs rise time. Ideal for precise photometry in UV to visible bands. Metal封装, 2.4x2.4mm active area.

Long wavelength InGaAs PIN photodiode with 2.6μm cut-off, φ1mm receiving surface, and 1.3 A/W sensitivity. Features low noise, high reliability, and fast response. Ideal for industrial sensing. TO-18 metal package. Custom options available.

Miniaturized CMOS linear array sensor with 512 pixels, 12.5 μm pitch, and 5 V single supply. Features high sensitivity, low dark current, and built-in timing generation. Ideal for industrial imaging with spectral response 400 to 1000 nm.

High-precision S9706 digital RGB color sensor with 12-bit output and 3.3V low voltage operation. Simultaneously measures red (615nm), green (530nm), and blue (460nm) colors with two-stage sensitivity adjustment. Features CMOS monolithic IC design, no external components required, and operates across -25°C to +85°C temperature range.

Improved four-sided pincushion type PSD with 9x9 mm large sensitive surface. Chip carrier package for surface mount, 1.26 mm thick. Offers excellent position detection, 0.6 A/W sensitivity, 320 to 1100 nm range. Evaluation board available. Custom options supported.

Four-pixel silicon PIN photodiode array for precise laser beam alignment. Features low crosstalk (max 2%), wide spectral response 190-1000nm, high-speed 20MHz response, and TO-5 metal package. Ideal for position sensing applications.

High sensitivity RGB photodiode array in a compact surface mount package. Detects blue, green, and red light intensity with fast 0.5μs rise time. Ideal for color sensing applications. Operating temperature -10 to +60°C.

High sensitivity photodiode for visible to near-infrared range. Features low dark current, high reliability, and excellent linearity. Suitable for analytical and optical measurement equipment. Custom options available.

High-efficiency InGaAs PIN photodiode with spherical lens window for easy optical axis calibration and minimal reflected light. Features 0.95 A/W sensitivity, 2000 MHz cutoff frequency, and TO-18 metal package. Ideal for fiber coupling and OEM applications.

High-sensitivity silicon photodiode with integrated interference filter for precise 254 nm monochromatic light detection. Features 10 nm FWHM spectral width, 0.018 A/W sensitivity, and low dark current. Customizable for other wavelengths. Ideal for accurate photometric measurements.

Low dark current premolded photodiode for visible to near-IR bands. 2.8x2.4mm photosensitive area, silicone resin window, 10V reverse voltage. Ideal for exposure meters, illuminometers, and optical switches. Reliable OEM supply.

Encapsulated in ceramic with a 5.8×5.8mm receiving surface, this uncooled photodiode offers 0.36A/W sensitivity at 720nm, 20pA dark current, and 2μs rise time. Ideal for precision photometry from UV to visible wavelengths.

High-performance InGaAs PIN photodiode with wide spectral response 0.9-2.6μm and peak sensitivity at 2.3μm. Features high responsivity 1.0-1.3 A/W, low dark current, and compact TO-18 package. Ideal for optical power meters, gas analyzers, and NIR spectroscopy. RoHS compliant, operates -40°C to +85°C.

High precision non-cooled infrared photodiode with low dark current (20 pA) and 0.5 μs rise time. Pre-molded plastic package prevents stray light for accurate low to high illuminance measurement. Ideal for visible to near-infrared applications.

Micro-machined thermal IR emitter with true blackbody radiation, low power consumption, and high emissivity. Features a resistive heating element on a thin dielectric membrane for long lifetime and efficient modulation.

High-speed silicon PIN photodiode with wide spectral sensitivity from visible to near-infrared. Features low dark current, low junction capacitance, and high reliability. Ideal for industrial and scientific applications.