Infrared Photoelectric Sensor

Broad spectral response from 320 to 1100nm with peak sensitivity of 0.58A/W. Low dark current of 10pA and fast 2.5μs rise time ensure high accuracy. Large 2.8x2.4mm sensing area, uncooled plastic package for easy integration. Ideal for optical detection, automated production lines, and spectroscopy.

High sensitivity silicon photodiodes for visible to infrared detection. Spectral range 340-1100nm, reverse voltage 30V. Ideal for universal photometers. Successor S12915 series available for new designs.

High reliability silicon photodiode for precision photometry from UV to near-infrared. Features 0.5A/W sensitivity, low 20pA dark current, and 0.1μs rise time. Ideal for industrial and scientific applications requiring accurate light detection.

High-sensitivity silicon PIN photodiode for precise photometric measurement from visible to near-infrared. Features 0.52 A/W sensitivity, 20 MHz cut-off frequency, low capacitance, and high reliability in TO-5 metal package. Ideal for OEM applications.

The S1337-16BR is a high-precision silicon photodiode covering 340 to 1100 nm. Features 0.62 A/W sensitivity, 50 pA dark current, and 0.2 μs rise time. Ceramic package, uncooled, ideal for photometric applications. Custom options available.

High sensitivity silicon pin photodiode S2386-18L with 0.6 A/W responsivity and 2 pA dark current. Ideal for visible to near-infrared universal photometers and analytical instruments. Features low noise, high reliability, and excellent linearity.

High-sensitivity silicon photodiode in a clear plastic package. Features 0.48A/W responsivity, 20pA dark current, and 0.5μs rise time. Ideal for precision light detection from 320 to 1000nm. Reliable and cost-effective.

High UV sensitivity with 75% QE at 200nm and suppressed IR response for accurate photometry. Low dark current enables precise low-light measurements. Ideal for analytical and optical equipment. Custom options available.

High sensitivity UV to NIR photodiode with low capacitance and fast 0.1μs rise time. Ideal for precision photometric measurements. Features 5.8x5.8mm active area, 0.5A/W sensitivity, and 20pA dark current. Reliable TO-5 metal package for industrial applications.

The S1226-44BK silicon photodiode offers a 3.6x3.6mm receiving surface and spectral response from 320 to 1000nm. With low dark current and fast 1μs rise time, it ensures reliable UV to visible light detection. Ideal for precision photometry in industrial and scientific applications.

G12180-003A InGaAs PIN photodiode features low noise, low dark current, and low terminal capacitance. With a 0.3mm photosensitive area and TO-18 package, it is ideal for laser monitors, optical power meters, and NIR photometry.

The T15770 infrared photoelectric sensor features high sensitivity and fast 20ms response at 4.45μm peak wavelength. Housed in a compact TO-18 metal package, it offers stable performance from -20°C to +50°C. Ideal for flame detection, industrial automation, and environmental monitoring with reduced false alarms.

The T15770 thermopile detector offers high sensitivity at 4.45μm for precise flame detection. Features a TO-18 package, 1.2x1.2mm receiving surface, 50 V/W sensitivity, and 90° field of view. Ideal for industrial safety systems.

High sensitivity silicon photodiode for visible to infrared photometry. Features low dark current, high linearity, and plastic potting for high humidity environments. Ideal for general photometers. Operating temp -20 to +60°C.

Compact 16-channel APD array with integrated preamp and DC feedback for reduced background light effects. High-speed 180 MHz response, parallel output, and 420-1150 nm spectral range. Ideal for simultaneous multi-point light detection.

Professional-grade silicon photodetector offering 75% quantum efficiency at 200 nm UV and 1 μs rise time. Features low 100 pA dark current and 380 pF junction capacitance for precise photometric measurements across ultraviolet to infrared spectrum. Ideal for scientific instruments and optical measurement systems requiring high accuracy.

High sensitivity silicon photodiodes for precise UV to near-infrared photometry. Features low capacitance, high reliability, and 0.5 A/W sensitivity. Ideal for industrial and scientific applications. Custom options available.

High sensitivity silicon PIN photodiodes in ceramic chip carrier packages for surface mount. Large light-receiving surfaces (5x5mm to 11x6mm) enable wide field of view. Ideal for POS scanners, power meters, and analytical instruments. Suitable for reflow soldering.

High sensitivity UV to near-infrared silicon photodiode in TO-18 metal package. Features low capacitance, 20 pA dark current, and 0.1 μs rise time. Ideal for precision photometry. Reliable and customizable for industrial applications.

The L4643 10W xenon flash lamp offers high stability and long life despite low-cost electrodes. Rated for 1e9 flashes with 5-7 kV trigger voltage. Choose hemispherical or flat window. No cooling required. Ideal for versatile industrial applications.