Infrared Photoelectric Sensor

Product Description: S4111-35Q Silicon Photodiode Array is Used in The Ultraviolet to Near-infrared Band Features: A 35-pixel silicon photodiode array suitable for the ultraviolet to near-infrared band S4111-35Q is a linear array of silicon photodiodes installed in a ceramic DIP (dual in-line package). This photodiode array is mainly used for weak light measurement such as spectrophotometry, covering a wide spectral range from ultraviolet light to near-infrared light. Since

S16767-01MS Silicon Photodiode Low Dark Current For Visible Range Premolded Package Low Dark Current, Pre-Molded Package These are photodiodes that offer low dark current to measure low to high ilumination with high accuracy. The premolded package is designed to block stray light from the side and back of the package to reaching the photosensitive area. Applications: 1. Exposure meters 2. Illuminometers 3. Copiers 4. Display light control 5. Optical switches Window material

Product Description: S16840-02MS Silicon Photodiodes For The Visible Light To Infrared Band Features: Low dark current, pre-molded packaging These photodiodes provide low dark current for high-precision measurement from low illumination to high illumination. Pre-molded packaging is designed to block stray light from the sides and back of the package to the light-receiving surface. Characteristics -S16838-01MS: Applicable to the visible light band -S16838 /S16840-02MS:

Product Description: S16838-01MS Silicon Photodiode is Used in the Visible Light to Near-infrared Band Features: Low dark current, pre-molded packaging These photodiodes provide low dark current for high-precision measurement from low illumination to high illumination. Pre-molded packaging is designed to block stray light from the sides and back of the package to the light-receiving surface. Characteristics -S16838-01MS: Applicable to the visible light band -S16838 /S16840

Product Description: S16765-01MS Silicon Photodiode is Used in the Visible Light to Near-infrared Band Features: Low dark current, pre-molded packaging These photodiodes provide low dark current for high-precision measurement from low illumination to high illumination. Pre-molded packaging is designed to block stray light from the sides and back of the package to the light-receiving surface. Characteristics -S16838-01MS: Applicable to the visible light band -S16838 /S16840

Product Description: S16767-01MS Silicon Photodiode is Used in the Visible Light to Near-infrared Band Features: Low dark current, premolded packages These are premolded package photodiodes that offer low dark current. There is little stray light incident from the side andback of the package to the photosensitive area, and they can measure from low to high ilumination with high accuracy. Features S16838-01MS: For visible rangeS16838/S16840-02MS: For visible to IR rangeS16765

Product Description: S1223 S1223-01 Silicon PIN Photodiode Is Used For Precise Photometric Determination In The Visible Light To Near-infrared Band Features: It is suitable for precise photometric determination in the visible light to near-infrared band Characteristics It has high sensitivity in the near-infrared band High reliability - High-speed response: fc = 20 MHz Low capacitance Detailed parameters The illuminated surface is 3.6 × 3.6mm Encapsulation metal Package

Product Description: G6854-01 Spherical lens window Packaged InGaAs PIN Photodiode Features: Characteristics - Easy optical axis calibration - High-efficiency optical fiber coupling -CD package Packages that can be soldered by YAG lasers A spherical lens window with an anti-reflection film can minimize the input of reflected light to the greatest extent Detailed parameters The illuminated surface is φ 0.08mm Pixel number 1 Encapsulation metal Packaging category TO-18 (with

Silicon Photodiodes S2387-66R Suitable For Visible To Infrared Universal Photometer S2387-66R: Not recommended for new designs. When purchasing a new product, we recommend shopping for the successor S12915 series. For more information, please refer to the following webpage. Reverse voltage VR max (w) 30 Operating temperature* Topr (°℃) -20 to +60 Storage temperature* Tstg (c) -20 to +80 Spectral response range A 340 to 1100

Silicon PIN photodiode S5971 High Speed Response (100 MHz) The S5971 is a high-speed silicon PIN photodiode designed for visible to near-infrared light detection. The photodiode offers a wide wavelength range with a low bias voltage, making it suitable for optical communications and other high-speed photometry. Features - High-speed response: 100 MHz (VR=10 V) - Low price - High reliability Light sensitivity (typical) 0.55 A/W Dark current (max) 1000 pA Cut-off Frequency

Silicon photodiodes S1227-66BQ It is suitable for precise photometry in the ultraviolet to visible wavelength band; Suppresses infrared sensitivity Features - High UV sensitivity (quartz window type): QE = 75 % (λ = 200 nm) - Suppressed IR sensitivity - Low dark current Noise equivalent power (typical) 5.0×10-15 W/Hz1/2 Junction Capacitance (typical) 950 pF Rise Time (Typical) 2 μs Dark current (max) 20 pA Light sensitivity (typical) 0.36 A/W Silicon photodiodes S1227-66BR It

Silicon photodiodes S1227-33BQ It is suitable for precise photometry in the ultraviolet to visible wavelength band; Suppresses infrared sensitivity Features - High UV sensitivity (quartz window type): QE = 75 % (λ = 200 nm) - Suppressed IR sensitivity - Low dark current Noise equivalent power (typical) 2.5×10-15 W/Hz1/2 Junction Capacitance (typical) 160 pF Rise Time (Typical) 0.5 μs Dark current (max) 5 pA Maximum Sensitivity Wavelength (Typical) 720 nm Silicon photodiodes

Silicon photodiodes S1337-1010BQ It is suitable for precise photometry in the ultraviolet to infrared band Features - High UV sensitivity: QE 75% (λ=200 nm) - Low capacitance Maximum Sensitivity Wavelength (Typical) 960 nm Light sensitivity (typical) 0.5 A/W Rise Time (Typical) 3 μs Junction Capacitance (typical) 1100 pF Noise equivalent power (typical) 1.8×10-14 W/Hz1/2 Silicon photodiodes S1337-1010BR It is suitable for precise photometry in the ultraviolet to infrared band

Silicon photodiodes S1337-66BR It is suitable for precise photometry in the ultraviolet to infrared band Features - Low capacitance Maximum Sensitivity Wavelength (Typical) 960 nm Light sensitivity (typical) 0.62 A/W Rise Time (Typical) 1 μs Junction Capacitance (typical) 380 pF Noise equivalent power (typical) 1.0×10-14 W/Hz1/2 Silicon photodiodes S1337-33BR It is suitable for precise photometry in the ultraviolet to infrared band Features - Low capacitance Light-receiving

Silicon photodiodes S1337-66BQIt is suitable for precise photometry in the ultraviolet to infrared band Features- High UV sensitivity: QE 75% (λ=200 nm)- Low capacitance Maximum Sensitivity Wavelength (Typical)960 nmDark current (max)100 pARise Time (Typical)1 μsJunction Capacitance (typical)380 pFNoise equivalent power (typical)1.3×10-14 W/Hz1/2 Silicon photodiodes S1337-33BQ It is suitable for precise photometry in the ultraviolet to infrared bandFeatures- High UV

Silicon PIN photodiode S5821-01 High-performance, high-reliability silicon PIN photodiodes The S5821-01 is a high-speed silicon PIN photodiode with high sensitivity over a wide spectral range from visible to near-infrared. The S5821-01 delivers high performance and reliability at a low cost. Features - High speed response - Wide spectral sensitivity characteristic range - Low dark current - Low junction capacitance Maximum Sensitivity Wavelength (Typical) 960 nm Light

Silicon photodiodes S1226-5BK It is suitable for precise photometry in the ultraviolet to visible wavelength band; Suppresses near-infrared sensitivity Features - High UV sensitivity: QE = 75 % (λ = 200 nm) - Suppression of NIR sensitivity - Low dark current - High reliability Maximum Sensitivity Wavelength (Typical) 720 nm Light sensitivity (typical) 0.36 A/W Dark current (max) 5 pA Rise Time (Typical) 0.5 μs Junction Capacitance (typical) 160 pF Noise equivalent power

Silicon photodiodes S1226-44BK It is suitable for precise photometry in the ultraviolet to visible wavelength band; Suppresses near-infrared sensitivity Features - High UV sensitivity: QE = 75 % (λ = 200 nm) - Suppression of NIR sensitivity - Low dark current - High reliability Maximum Sensitivity Wavelength (Typical) 720 nm Light sensitivity (typical) 0.36 A/W Dark current (max) 10 pA Rise Time (Typical) 1 μs Junction Capacitance (typical) 500 pF Noise equivalent power

S1133 S1133-14 S1133-01 Si photodiode S1087/S1133 series are ceramic package photodiodes that offer low dark current. Ceramic package used is light-impervious, so no stray light can reach the active area from the side or backside. This allows reliable optical measurements in the visible to near infrared range, over a wide dynamic range from low light levels to high light levels. Features: S1087, S1133 : For visible range S1087-01, S1133-01: For visible to IR range S1133-14 :

InGaAs PIN photodiodes G12180-005A Receiving surface: φ0.5 mm Features - Low noise, low dark current - Low junction capacitance - Light receiving surface: φ0.5 mm - Low noise Maximum Sensitivity Wavelength (Typical) 1.55 μm Light sensitivity (typical) 1.1 A/W Dark current (max) 0.75 nA Cut-off Frequency (typical) 200 MHz Junction Capacitance (typical) 15 pF Noise equivalent power (typical) 7.0×10-15 W/Hz1/2 Spectral sensitivity characteristics