Infrared Photoelectric Sensor

MEMS thermopile sensor with fast response and NTC compensation for non-contact temperature measurement. TO-46 metal package ensures durability. Ideal for refrigerators, car AC, and medical devices. High accuracy, low cost, and customizable.

Large-area high-speed silicon PIN photodiodes with 40 MHz (S3071) and 45 MHz (S3072) cut-off frequencies. Ideal for free-space optics and high-speed pulsed light detection. Features TO-8 and TO-5 metal packages, 920 nm peak sensitivity, and high reliability.

High speed compact Si APD for LiDAR in 900nm band. Features low bias operation (breakdown voltage 175V typ), high sensitivity at 840nm, and 600MHz cutoff frequency. Ideal for laser monitoring in consumer to industrial rangefinders.

High UV sensitivity with QE 75% at 200nm, suppressed near-infrared response, and low dark current up to 5 PA. Metal TO-5 package with integrated lens for precise photometric detection. Ideal for industrial automation and security systems.

High-performance silicon photodiode with 1089 pixels and 15um pitch for visible to near-infrared detection. Features 90% fill factor, borosilicate glass window with AR coating, and surface mount package. Ideal for NDIR gas sensing and thermal imaging. Customizable options available.

LHI778 dual-element pyroelectric sensor with TO-5 metal housing, high responsivity, low noise, and improved EMI protection. Ideal for motion detectors and alarms. CE and RoHS certified. Customizable window sizes available.

Ceramic package Si photodiodes with low dark current for reliable visible to near IR measurements. Features spectral response 320-1100nm, peak sensitivity up to 960nm, and fast rise time. Ideal for exposure meters, illuminometers, and optical switches.

High UV sensitivity silicon photodiode with QE 75% at 200nm, ideal for precision photometry from UV to visible. Features low dark current, suppressed near-infrared sensitivity, and high reliability in a TO-5 metal package.

The S1337-21 silicon photodiode offers a spectral response from 190 to 1100 nm with 0.52 A/W sensitivity. Encapsulated in ceramic, it features low dark current (500 pA) and fast 8 μs rise time. Ideal for precision photometry in UV to IR bands.

Four-pixel silicon PIN photodiode with wide spectral response from 190 to 1000 nm. Features low crosstalk (max 2%), high-speed response (20 MHz), and TO-5 metal package. Ideal for visible to infrared photometers and laser beam alignment.

High sensitivity 0.72 A/W at 960nm, 4 segment array for precise position sensing. Low crosstalk, 20 MHz cutoff, ceramic SMD package. Ideal for laser alignment, level meters, encoders, and optical pickups. RoHS compliant.

The S9702 RGB color sensor features a 3-channel silicon photodiode in a compact surface mount plastic package. Sensitive to blue, green, and red spectrum regions with no near infrared sensitivity. 55% smaller than previous model. Ideal for precise color detection applications.

High-sensitivity RGB color sensor in a compact 6x8mm plastic package. Spectral range 400-540nm with peak at 460nm. Insensitive to near IR, low dark current. Ideal for white balance, color identification, and light source detection.

High-reliability silicon photodiode for precision photometry from UV to NIR (190-1100 nm). Features low capacitance, high UV sensitivity, and fast 0.1μs rise time. Ideal for industrial and scientific applications. Custom options available.

High-sensitivity InGaAs PIN photodiode with 1.1 A/W responsivity and 0.5 nA dark current. TO-18 package, 600 MHz cut-off frequency, -40 to 100°C operation. Ideal for laser monitoring, optical power meters, and NIR photometry.

YJJ G12180-020A InGaAs PIN photodiode features a φ1mm sensitive area, low noise, low dark current (4 nA), and 60 MHz cutoff frequency. Ideal for optical fiber communication with peak sensitivity at 1.55 μm and 1.1 A/W responsivity.

The HSL Series IR lamp from Hyman Sensors offers reliable NDIR gas detection for CO2 and hydrocarbons. Compact design, long lifetime, and RoHS compliant. Ideal for industrial gas sensing applications with stable 5V operation and 60mA current.

High-sensitivity silicon photodiode in clear plastic package. Features 0.48 A/W sensitivity, 20 pA dark current, and 0.5 μs rise time. Ideal for visible light detection systems, consumer electronics, and industrial auxiliary detection. Custom options available.

High UV sensitivity with QE 75% at 200nm, suppressed NIR sensitivity, low dark current (20pA max), and fast 2μs rise time. Ideal for precise photometry in analytical and optical measurement equipment. Metal TO-8 package ensures durability.

High-sensitivity photodiode for UV to NIR bands, 320-1100nm spectral range. Features low capacitance, high reliability, and 0.5A/W photosensitivity. Ideal for precision photometry. Metal TO-8 package, uncooled, max reverse voltage 5V.