ShenzhenYijiajie Electronic Co., Ltd.
                                                                                                           
Verified Supplier
20 Years
Since 2006
Menu
Home Products Infrared Photoelectric Sensor

Infrared Photoelectric Sensor

China S10227-10 Photoelectric Sensor Resin-sealed CMOS Image Sensor 512 Pixel 9434 Lines/s for Barcode Scanning Displacement Measurement for sale

S10227-10 Photoelectric Sensor Resin-sealed CMOS Image Sensor 512 Pixel 9434 Lines/s for Barcode Scanning Displacement Measurement

Price: Negotiable
MOQ: 1PCS
Delivery Time: 5-8 work days

High-resolution 1x512 pixel CMOS image sensor with 9434 lines/s scan rate for fast barcode reading and displacement tracking. Features 400-1000nm spectral range, low noise 0.45mV RMS, and compact resin-sealed SMD package. Ideal for optical testing and mini-spectrometers.

China YJJ S16838-01MS Silicon Photodiode 2.8x2.4mm Visible Light to Near-Infrared Band for sale

YJJ S16838-01MS Silicon Photodiode 2.8x2.4mm Visible Light to Near-Infrared Band

Price: Negotiable
MOQ: 1
Delivery Time: 5-8 days

Low dark current silicon photodiode for high-precision measurement from low to high illumination. Pre-molded packaging blocks stray light. Spectral response 320-730nm, peak sensitivity 560nm, 0.3 A/W. Ideal for OEM applications.

China Vishay BPW21R Photodiode Photodetector 565nm 50 Degree 300mW Through Hole TO-5 for sale

Vishay BPW21R Photodiode Photodetector 565nm 50 Degree 300mW Through Hole TO-5

Price: Negotiable
MOQ: 1
Delivery Time: 3 days

High sensitivity photodiode with 565nm peak wavelength, 50° half angle, and 300mW power dissipation. Through-hole TO-5 package ensures durability. Ideal for precision optical detection. RoHS compliant.

China YJJ S12023-02 Near-Infrared Silicon Photodiode 800 nm 0.2 mm² for Optical Distance Measuring for sale

YJJ S12023-02 Near-Infrared Silicon Photodiode 800 nm 0.2 mm² for Optical Distance Measuring

Price: Negotiable
MOQ: 1
Delivery Time: 5-8 days

Low bias voltage silicon APD optimized for 800 nm band. Features high speed response, low noise, and stable operation under 200V. Ideal for FSO and rangefinder applications. TO-18 metal package, 1000 MHz cutoff frequency.

China YJJ S12053-10 Silicon APD Avalanche Photodiode 0.2mm 620nm Short Wavelength Type for sale

YJJ S12053-10 Silicon APD Avalanche Photodiode 0.2mm 620nm Short Wavelength Type

Price: Negotiable
MOQ: 1
Delivery Time: 3 days

High sensitivity and low noise UV to visible range APD. Features 0.2mm receiving surface, 900 MHz cutoff frequency, and 150V breakdown voltage. Ideal for precision detection with metal TO-18 package.

China S15639-1325PS Near Infrared High Sensitivity MPPC SiPM 1.3x1.1mm 905nm Photon Counter for sale

S15639-1325PS Near Infrared High Sensitivity MPPC SiPM 1.3x1.1mm 905nm Photon Counter

Price: Negotiable
MOQ: 1
Delivery Time: 3-5workingdays

High sensitivity MPPC SiPM for automotive LiDAR. Features 9% PDE at 905nm, low afterpulse

China C12880MA Mini Spectrometer 340-850nm Range 20.1×12.5×10.1mm Ultra-Compact Design for Mobile Measurement Devices for sale

C12880MA Mini Spectrometer 340-850nm Range 20.1×12.5×10.1mm Ultra-Compact Design for Mobile Measurement Devices

Price: Negotiable
MOQ: 1
Delivery Time: 3-5work days

The C12880MA mini spectrometer features an ultra-compact 20.1×12.5×10.1mm fingertip-sized design with 5g weight and 340-850nm spectral range. This high-sensitivity spectrometer offers 15nm resolution, electronic shutter function, and hermetic TO-10 packaging for reliable integration into mobile measurement equipment and compact analytical devices.

China S2386-45K Silicon PIN Photodiode 3.9×4.6mm Sensitive Area for Visible to Near-IR 320-1100nm Applications for sale

S2386-45K Silicon PIN Photodiode 3.9×4.6mm Sensitive Area for Visible to Near-IR 320-1100nm Applications

Price: Negotiable
MOQ: 1
Delivery Time: 3-5work days

High-sensitivity silicon PIN photodiode with 3.9×4.6mm active area and 320-1100nm spectral range. Features low dark current, high linearity, and metal TO-5 encapsulation. Ideal for general photometry, light measurement, and optical sensing applications requiring reliable performance across visible to near-infrared wavelengths.

China Hamamatsu C12880MA Infrared Photoelectric Sensor 340-780nm Spectral Response 5V Reverse Voltage for sale

Hamamatsu C12880MA Infrared Photoelectric Sensor 340-780nm Spectral Response 5V Reverse Voltage

Price: Negotiable
MOQ: 1
Delivery Time: Negotiable

High sensitivity infrared photoelectric sensor with 340-780nm spectral range and 5V max reverse voltage. Compact metal package weighs only 5g. Ideal for industrial automation, robotics, and security systems. Custom options available.

China G12181-003A InGaAs PIN Photodiode Sensor 0.9-1.7μm 800MHz for Optical Communication for sale

G12181-003A InGaAs PIN Photodiode Sensor 0.9-1.7μm 800MHz for Optical Communication

Price: Negotiable
MOQ: 1PCS
Delivery Time: 5-8 work days

High-speed InGaAs PIN photodiode with 0.9-1.7μm spectral range, 800MHz cut-off frequency, and ultra-low dark current (max 0.3nA). Ideal for fiber optic transceivers, power meters, and laser monitoring. TO-18 metal package ensures durability and easy integration.

China S1336-5BQ Precision Photodiode 190-1100nm UV to NIR 2.4x2.4mm TO-18 for sale

S1336-5BQ Precision Photodiode 190-1100nm UV to NIR 2.4x2.4mm TO-18

Price: Negotiable
MOQ: 1
Delivery Time: 3 days

High sensitivity UV to near-infrared photodiode with 0.5 A/W responsivity at 960 nm. Low dark current (20 pA) and capacitance (20 pF) for precise photometry. Metal TO-18 package, 5V reverse voltage. Ideal for analytical instruments.

China S16429-01CT Photosensor with Gain Stabilized APD and 300 MHz Front End IC for sale

S16429-01CT Photosensor with Gain Stabilized APD and 300 MHz Front End IC

Price: Negotiable
MOQ: 1
Delivery Time: 3-5workingdays

This photosensor integrates a gain-stabilized APD and high-speed transimpedance amplifier for stable performance against temperature fluctuations. Features 300 MHz bandwidth, low noise, and no ringing. Ideal for precision optical detection in industrial and B2B applications.

China S2386-18L Si Photodiode 320 to 1100nm Visible to Near IR General Purpose Photometry for sale

S2386-18L Si Photodiode 320 to 1100nm Visible to Near IR General Purpose Photometry

Price: Negotiable
MOQ: 1
Delivery Time: 3-5workingdays

High sensitivity Si photodiode for visible to near IR range. Features low dark current, high reliability, and superior linearity. Ideal for analytical instruments and optical measurement equipment.

China YJJ S1226-8BQ High Reliability Low Dark Current Silicon Photodiode 190-1000nm 5.8x5.8mm for sale

YJJ S1226-8BQ High Reliability Low Dark Current Silicon Photodiode 190-1000nm 5.8x5.8mm

Price: Negotiable
MOQ: 1
Delivery Time: 3 days

High reliability silicon photodiode for precision UV to visible photometry. Features low dark current (20pA), high UV sensitivity (QE 75% at 200nm), and suppressed near-infrared response. Ideal for industrial and scientific applications.

China Silicon Pin Photodiode S2386 Series 320-1100nm High Sensitivity Near-Infrared Detector for sale

Silicon Pin Photodiode S2386 Series 320-1100nm High Sensitivity Near-Infrared Detector

Price: Negotiable
MOQ: 1
Delivery Time: 3-5work days

High sensitivity in near-infrared band with low dark current and excellent linearity. Suitable for visible to near-infrared universal photometers. Metal package ensures high reliability. Custom options available.

China G12180-010A Low Junction Capacitance InGaAs PIN Photodiode 1.55 μm 1.1 A/W for Precision Photometry for sale

G12180-010A Low Junction Capacitance InGaAs PIN Photodiode 1.55 μm 1.1 A/W for Precision Photometry

Price: Negotiable
MOQ: 1
Delivery Time: 3-5work days

Low noise InGaAs PIN photodiode with φ1 mm receiving surface, 1.1 A/W sensitivity at 1.55 μm, and 55 pF junction capacitance. Ideal for precision photometry and radiometry instruments. Features low dark current and 60 MHz cut-off frequency.

China S3071 Si PIN Photodiode 5.0 mm Active Area 40 MHz High Speed Pulsed Light Detection for sale

S3071 Si PIN Photodiode 5.0 mm Active Area 40 MHz High Speed Pulsed Light Detection

Price: Negotiable
MOQ: 1
Delivery Time: 3-5work days

Large area φ5.0 mm Si PIN photodiode with 40 MHz cut-off frequency for high-speed pulsed light detection. TO-5 metal package ensures high reliability. Ideal for spatial light transmission.

China YJJ S6967 Silicon PIN Photodiode Plastic SIP 5.5x4.8mm 320-1060nm Visible to Near-Infrared Detection for sale

YJJ S6967 Silicon PIN Photodiode Plastic SIP 5.5x4.8mm 320-1060nm Visible to Near-Infrared Detection

Price: Negotiable
MOQ: 1
Delivery Time: 5-8 days

High sensitivity silicon PIN photodiode in plastic SIP package. Large 5.5x4.8mm light-receiving surface, 320-1060nm spectral range, 0.65 A/W sensitivity, 50 MHz cutoff. Ideal for visible to near-infrared detection with fast response.

China YJJ S4111-35Q 35-Pixel Silicon Photodiode Array 190-1100nm 0.58 A/W for sale

YJJ S4111-35Q 35-Pixel Silicon Photodiode Array 190-1100nm 0.58 A/W

Price: Negotiable
MOQ: 1
Delivery Time: 5-8 days

The S4111-35Q is a 35-pixel silicon photodiode array in a ceramic DIP package, covering 190-1100nm. Features high sensitivity, low crosstalk, and low dark current (10 pA). Ideal for spectrophotometry and weak light detection. Custom filter options available.

China BPW21R Planar Silicon PN Photodiode 7.5mm2 TO-5 Low Dark Current for sale

BPW21R Planar Silicon PN Photodiode 7.5mm2 TO-5 Low Dark Current

Price: Negotiable
MOQ: 1
Delivery Time: 3-5workingdays

BPW21R planar silicon PN photodiode in hermetically sealed TO-5 package. Features 7.5mm2 sensitive area, low dark current, high shunt resistance, and human eye responsivity. Ideal for exposure and color sensing. RoHS compliant.