Infrared Photoelectric Sensor

High-sensitivity photodiode for UV to NIR bands, 320-1100nm spectral range. Features low capacitance, high reliability, and 0.5A/W photosensitivity. Ideal for precision photometry. Metal TO-8 package, uncooled, max reverse voltage 5V.

High-reliability uncooled photodiode for UV to NIR precision photometry. Features 0.5A/W sensitivity at 960nm, 20pA dark current, and 0.1μs rise time. Metal TO-18 package with 2.4x2.4mm receiving surface. Ideal for industrial and scientific applications.

The G12180-020A photoelectric sensor offers 0-200mm detection range, IP67 protection, and ≤1ms response time. Ideal for conveyor belt systems, packaging machinery, and material handling. Features NPN NO/NC output, visible red LED, and wide temperature tolerance for reliable industrial automation.

High-sensitivity silicon photodiode with 0.5 A/W photosensitivity and 100 pA dark current. Metal package for durability. Ideal for precision photometry, NDIR gas analysis, and industrial sensing. Custom options available.

End-window UVTRON R9533 offers easy installation, high sensitivity, and a wide field of view using durable Ni electrode material. Ideal for flame detection and UV monitoring with 185-260nm spectral range and 400V DC max supply.

High UV sensitivity with QE 75% at 200nm, low capacitance, and 0.5A/W photosensitivity. Ceramic package, uncooled type, ideal for precise photometry from UV to IR. Max reverse voltage 5V, dark current 100pA, rise time 1μs.

YJJ S5981 4-quadrant Silicon PIN Photodiode with 10x10mm photo-sensitive area. Spectral response 320-1100nm, peak at 960nm. Ultra-thin ceramic SMD package, low dark current ≤4nA. Ideal for laser alignment, position detection, and LiDAR. Supports lead-free reflow soldering.

High-sensitivity non-cooled silicon photodiode for UV to visible range. Features 190-1000nm spectral response, 1.1x1.1mm active area, and durable TO-18 metal package. Ideal for precise photometry and NDIR sensing. Made in Japan.

High sensitivity silicon PIN photodiode in a plastic SIP package. Features 5.5x4.8mm photosensitive surface, 15 MHz cut-off frequency, and 0.68 A/W sensitivity. Ideal for near-infrared optical switching systems. RoHS compliant.

High UV sensitivity silicon photodiode with 2.4x2.4mm receiving surface and 320-1000nm spectral range. Features low dark current (5pA), fast 0.5μs rise time, and TO-5 metal package. Ideal for precision photometry from UV to visible light.

High-speed InGaAsPIN photodiode with φ1mm sensitive area, low noise, low dark current (4 nA), and 60 MHz cutoff frequency. Ideal for near-infrared detection. TO-18 metal package, non-cooled. Custom options available.

Low noise, low dark current InGaAs PIN photodiode with φ1mm sensitive area. Spectral response 0.9-1.7μm, peak sensitivity at 1.55μm. Ideal for light detection in various applications. Custom options available.

High-sensitivity Si photodiode with integrated 254 nm interference filter. Features 10 nm FWHM spectral response for accurate stray-light-free photometry. Ideal for analytical instruments and UV monitors. Customizable peak wavelengths available.

Optimized for visible light detection with 320-730nm spectral range and 560nm peak sensitivity. Ultra-low 10pA dark current and 2.5μs rise time ensure precise, fast measurements. Ideal for color sorting, light meters, and portable optical devices. Uncooled plastic package for easy integration and low system cost.

This 800 nm near-infrared silicon APD features a low temperature coefficient of 0.4V/C for stable operation. High speed response, high sensitivity, and low noise. Ideal for light wave distance meters and free space optics. Custom options available.

High UV sensitivity with 75% QE at 200nm and suppressed NIR response. Low dark current of 2pA and fast 0.15μs rise time. Ideal for precise photometry in UV to visible bands. Available in TO-18 metal package with custom options.

The S1337-33BQ silicon photodiode offers precision photometry from UV to IR (190-1100nm). Features 0.5A/W sensitivity, low dark current, and ceramic package. Ideal for analytical instruments and OEM applications.

Compact MEMS-based IR source with broadband emission 2-14 μm, emissivity >0.95, and low power consumption ≤170 mW. Ideal for portable gas analyzers, NDIR sensors, and field spectroscopy. TO-39 package with IP67 rating ensures durability in harsh environments.

High sensitivity RGB photodiode array with 0.23 A/W green channel and 0.5 μs rise time. Surface-mount package enables easy integration. Ideal for color identification, white balance, and brightness detection in industrial and consumer electronics.

High-speed silicon PIN photodiode with φ3.0 mm light-receiving surface and 45 MHz cutoff frequency. Ideal for free-space optical components and high-speed pulse detection. Features TO-5 metal package, 320 to 1060 nm spectral range, and high reliability. Suitable for demanding space optical transmission applications.