Infrared Photoelectric Sensor

UVTRON R9533 The R9533 is an end-window type (UV light enters from the top of the bulb) and can be easily installed in most devices with high sensitivity and a wide field of view. Spectral Sensitivity Characteristics (Short) 185 nm Spectral Sensitivity Characteristics (Long) 260 nm [Maximum Rating] Supply Voltage (DC) 400 V [Maximum Rating] The average discharge current 1 mA Discharge start-up voltage (DC) 280 V Discharge Sustain Voltage (DC) 230 V

Silicon photodiodes S12742-254Photodiode with interference filter for monochromatic light (254 nm) detection The window of the S12742-254 uses an interference filter and is only sensitive to monochromatic light. The spectral sensitivity characteristic width is extremely narrow at 10 nm (FWHM), so photometric measurements can be made accurately without being affected by stray light. The maximum sensitivity wavelength is 254 nm typical. The S12742-254 can be customized to

Silicon PIN Photodiode S3071 S3072 For Space Light Transmission (free-space optics) Large-area, high-speed silicon PIN photodiodes The S3071 is a silicon PIN photodiode with a relatively large photosensitive surface, but provides an excellent frequency response at 40 MHz. This photodiode is suitable for space light transmission (free-space optics) and high-speed pulsed light detection. Features: - Photoreceptor Size: φ5.0 mm - Cut-off frequency: 40 MHz (VR=24 V) - High

Color sensor S9706 12-bit digital output: The S9706 is a digital color sensor that is sensitive to the red (λ=615 nm), green (λ=540 nm), and blue (λ=465 nm) regions of the spectrum. The heartbeat is serially output as 12-bit digital data. Built-in three 12-bit registers for simultaneous measurement of RGB tri-color. The sensitivity level can be adjusted in two steps to cover a wide spectral range. Features: -12-bit digital output -Simultaneous measurement of RGB tri-color

S12915-33R Silicon Photodiode Sensor For General Photometer Low Dark Current Universal photometry for visible to infrared The S12915 series has high sensitivity in the visible to near infrared range. It has higher sensitivity than the S2387 series and can be used in high humidity environments. Features - High sensitivity in the visible to infrared range - Low dark current - High linearity Specifications: Window material Plastic potting Package 6×7.6mm Photosensitive area size

Product Description: G12180-005A InGaAs PIN Photodiode Receiving Surface: φ0.5mm Features: Receiving surface φ0.5mm Number of pixels 1 Encapsulation metal Package category TO-18 Heat dissipation uncooled type Sensitivity wavelength range 0.9 to 1.7 μm Maximum sensitivity wavelength (typical value) 1.55 μm Photosensitivity (typical value) 1.1 A/W Dark current (Max.) 0.75 nA Cut-off frequency (typical value) 200 MHz Junction capacitance (typical) 15 pF Noise equivalent power

Product Description: S1226-44BQ High UV Sensitivity Silicon Photodiode Is Suitable For Precision Photometry From Ultraviolet To Visible Light Features: Suitable for precision photometry in ultraviolet to visible wavelengths; Suppress near infrared sensitivity peculiarity - High UV sensitivity: QE = 75% (λ = 200 nm) - Suppress near infrared sensitivity - Low dark current - High reliability Receiving surface 3.6 × 3.6 mm Encapsulation metal Package category TO-5 Refrigeration

Product Description: S1226-18BK Silicon Photodiode Is Suitable For Precision Photometry From Ultraviolet To Visible Light Features: Suitable for precision photometry in ultraviolet to visible wavelengths; Suppress near infrared sensitivity peculiarity - High UV sensitivity: QE = 75% (λ = 200 nm) - Suppress near infrared sensitivity - Low dark current - High reliability Receiving surface 1.1 × 1.1 mm Encapsulation metal Package category TO-18 Refrigeration uncooled type

Product Description: S1337-21 Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands Features: Receiving surface 18 × 18 mm Encapsulated ceramics Package category is not sealed Package category is not sealed Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 190 to 1100 nm Maximum sensitivity wavelength (typical value) 960 nm Sensitivity (typical value) 0.52 A/W Dark current (Max.) 500 pA Rise time (typical value)

Product Description: S1336-8BQ Is Suitable For Precision Photometric Determination Of Silicon Photodiode Low Capacitance In Ultraviolet To Near-Infrared Bands Features: Suitable for precise photometry in ultraviolet to near-infrared bands peculiarity - High sensitivity in UV band - Low capacitance - High reliability Receiving surface 5.8× 5.8mm Encapsulation metal Package category TO-8 Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 190 to 1100

Product Description: S1336-8BK Is Suitable For Precision Photometric High-Sensitivity Photodiodes In The Ultraviolet To Near-Infrared Bands Features: Suitable for precise photometry in ultraviolet to near-infrared bands peculiarity - High sensitivity in UV band - Low capacitance - High reliability Receiving surface 5.8× 5.8mm Encapsulation metal Package category TO-8 Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 320 to 1100 nm Maximum

Product Description: S1336-5BK Silicon Photodiode Is Highly Reliable For Precision Photometry In Ultraviolet To Near-Infrared bands Features: Suitable for precise photometry in ultraviolet to near-infrared bands peculiarity - High sensitivity in UV band - Low capacitance - High reliability Receiving surface 2.4× 2.4mm Encapsulation metal Package category TO-18 Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 320 to 1100 nm Maximum sensitivity

Product Description: S1336-18BQ Is Suitable For Precision Photometry In The Ultraviolet To Infrared Band Silicon Photodiodes Photodiodes Features: Suitable for precise photometry in ultraviolet to near-infrared bands peculiarity - High sensitivity in UV band - Low capacitance - High reliability Receiving surface 1.1 × 1.1 mm Encapsulation metal Package category TO-18 Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 190 to 1100 nm Maximum

Product Description: S1336-18BK Is Suitable For Precision Photometry In The Ultraviolet To Infrared Band Silicon Photodiodes Photodiodes Features: Suitable for precise photometry in ultraviolet to near-infrared bands peculiarity - High sensitivity in UV band - Low capacitance - High reliability Receiving surface 1.1 × 1.1 mm Encapsulation metal Package category TO-18 Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 320 to 1100 nm Maximum

Product Description: S4349 Four-pixel Silicon PIN Photodiode Array Is Used For Laser Beam Alignment Features: Four pixel silicon PIN photodiode The S4349 is a four-pixel silicon PIN photodiode with sensitivity in the ultraviolet to near-infrared spectrum. The four-pixel format supports position sensing, for example for laser beam alignment. peculiarity - Four (2 × 2) pixel format - Low crosstalk: maximum 2% - Wide spectral response range: 190 to 1000 nm - High-speed response:

Product Description: S6775 Silicon PIN Photodiode Plastic SIP (Single-in-line package) Features: Plastic SIP (single-in-line package) The S6775-01 is a silicon PIN photodiode with a large light-receiving surface molded into a visible cut plastic SIP for detection in the near infrared range only. This silicon PIN photodiode has the characteristics of high sensitivity, high speed response and large light absorption. peculiarity - Visible light cutoff - high sensitivity - high

Product Description: S12053-02 Silicon APD Avalanche Photodiode Short Wavelength Type APD Features: peculiarity - High sensitivity and low noise in the UV to visible range Type Short wavelength type (Low bias operation) Receiving surface φ0.2mm Encapsulation metal Package category TO-18 Maximum sensitivity wavelength (typical value) 620 nm Sensitivity wavelength range 200 to 1000 nm Photosensitivity (typical value) 0.42 A/W Dark current (Max.) 5 nA Cut-off frequency (typical

Product Description: S12060-02 Silicon APD Low Temperature Coefficient For 800 nm Band Features: Low temperature coefficient for 800 nm band This is an 800 nm near-infrared silicon APD for stable operation over a wide temperature range. This is suitable for applications such as light wave distance meters and spatial light transmission (free space optics). peculiarity - Breakdown voltage temperature coefficient: 0.4V /°C - High speed response - High sensitivity and low noise

Product Description: S2386-8K Infrared Photoelectric Sensor 10 mV Silicon Carbide Photodiode Low Dark Current Features: Suitable for visible light to near infrared band, universal photometric determination Product features ● High sensitivity in visible to near infrared band ● Low dark current ● High reliability ● High linearity Rise time (typical value). 10 mu s Junction capacitance (typical value) 4300 pF Measurement condition TYP.TA =25 ℃, Unless otherwise noted,Photosensit

High sensitivity Si Pin photodiode with 920nm peak wavelength and 0.72 A/W responsivity. Features ceramic chip carrier packaging, 20MHz cutoff frequency, and 0.72μs rise time. Ideal for LiDAR, barcode recognition, and space light transmission applications with superior noise performance and thermal stability.