Infrared Photoelectric Sensor

Product Description: S1226-44BK Silicon Photodiode Is Suitable For Precision Photometry From Ultraviolet To Visible Light Features: Receiving surface 3.6 × 3.6 mm Encapsulation metal Package category TO-5 Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 320 to 1000 nm Maximum sensitivity wavelength (typical value) 720 nm Photosensitivity (typical value) 0.36A /W Dark current (Max.) 10 pA Rise time (typical value) 1 μs Junction capacitance

Product Description: S1337-16BQ Low Capacitance Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands Features: Receiving surface 5.9 × 1.1mm Encapsulated ceramics Package category -- Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 190 to 1100 nm Maximum sensitivity wavelength (typical value) 960 nm Photosensitivity (typical value) 0.5A /W Dark current (Max.) 50 pA Rise time (typical value) 0.2μs Junction

Product Description: S1337-16BR Is Suitable For Precision Photometric Silicon Photodiodes In The Ultraviolet To Infrared Bands Features: Receiving surface 5.9 × 1.1mm Encapsulated ceramics Package category -- Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 340 to 1100 nm Maximum sensitivity wavelength (typical value) 960 nm Photosensitivity (typical value) 0.62 A/W Dark current (Max.) 50 pA Rise time (typical value) 0.2μs Junction capacitance

Product Description: S1227-66BQ Silicon Photodiode Quartz Window Type Is Suitable For Precision Photometry In The Ultraviolet To Visible Wavelengths Features: Receiving surface 5.8 × 5.8 mm Encapsulated ceramics Package category -- Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 190 to 1000 nm Maximum sensitivity wavelength (typical value) 720 nm Photosensitivity (typical value) 0.36A /W Dark current (Max.) 20 pA Rise time (typical value) 2 μs

Product Description: S1227-33BR Silicone Photodiode Resin Potting Model Is Suitable For Precision Photometry From Ultraviolet To Visible Light Features: Receiving surface 2.4 × 2.4 mm Encapsulated ceramics Package category -- Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 340 to 1000 nm Maximum sensitivity wavelength (typical value) 720 nm Photosensitivity (typical value) 0.43 A/W Dark current (Max.) 5 pA Rise time (typical value) 0.5μs

Product Description: S1227-33BQ Quartz Window Type Silicon Photodiode Is Suitable For Precision Photometry In The Ultraviolet To Visible Wavelengths Features: Receiving surface 2.4 × 2.4 mm Encapsulated ceramics Package category -- Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 190 to 1000 nm Maximum sensitivity wavelength (typical value) 720 nm Photosensitivity (typical value) 0.36A /W Dark current (Max.) 5 pA Rise time (typical value) 0.5μs

Product Description: S1227-16BR Resin potting Silicon Photodiodes Are Suitable For Precise Photometry In The Ultraviolet To Visible Range Features: Receiving surface 5.9 × 1.1mm Encapsulated ceramics Package category -- Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 340 to 1000 nm Maximum sensitivity wavelength (typical value) 720 nm Photosensitivity (typical value) 0.36A /W Dark current (Max.) 5 pA Rise time (typical value) 0.5μs Junction

Product Description: S1227-1010BR Resin Potting Window Type Is Suitable For Precision Photometry In The Ultraviolet To Visible Wavelengths And Suppression Of Infrared Sensitivity Silicon Photodiodes Features: Detailed parameter Receiving surface 10 × 10 mm Encapsulated ceramics Package category -- Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 340 to 1000 nm Maximum sensitivity wavelength (typical value) 720 nm Photosensitivity (typical value)

Product Description: S1336-5BQ Is Suitable For Precision Photometric Photodiodes In Ultraviolet To Near-Infrared Bands Features: Suitable for precise photometry in ultraviolet to near-infrared bands peculiarity - High sensitivity in UV band - Low capacitance - High reliability Receiving surface 2.4× 2.4mm Encapsulation metal Package category TO-18 Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 190 to 1100 nm Maximum sensitivity wavelength

Product Description: S1336-44BK Silicon Photodiode Is Highly Reliable For Precision Photometry From Ultraviolet To Near-Infrared Bands Features: Suitable for precise photometry in ultraviolet to near-infrared bands peculiarity - High sensitivity in UV band - Low capacitance - High reliability Receiving surface 3.6× 3.6mm Encapsulation metal Package category TO-18 Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 190 to 1100 nm Maximum sensitivity

Product Description: S1336-44BK Silicon Photodiode Is Suitable For Precision Photometry From Ultraviolet To Near Infrared With High Reliability Features: Suitable for precise photometry in ultraviolet to near-infrared bands peculiarity - High sensitivity in UV band - Low capacitance - High reliability Receiving surface 3.6× 3.6mm Encapsulation metal Package category TO-18 Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 320 to 1100 nm Maximum

Product Description: S1337-33BQ Is Suitable For Precision Photometry In The Ultraviolet To Infrared Band Silicon Photodiodes Photodiodes Features: Receiving surface 2.4 × 2.4 mm Encapsulated ceramics Package category -- Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 190 to 1100 nm Maximum sensitivity wavelength (typical value) 960 nm Photosensitivity (typical value) 0.5A /W Dark current (Max.) 30 pA Rise time (typical value) 0.2μs Junction

Product Description: S1337-66BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands Features: Suitable for precise photometry in ultraviolet to infrared bands Receiving surface 5.8 × 5.8 mm Encapsulated ceramics Package category -- Refrigeration uncooled type Reverse voltage (Max.) 5 V Spectral response range 340 to 1100 nm Maximum sensitivity wavelength (typical value) 960 nm Photosensitivity (typical value) 0.62 A/W Dark current (Max.)

Product Description: S2387-33R Silicon Photodiode Is Suitable For General Purpose Photometers In The Visible To Infrared Band Features: Four pixel silicon PIN photodiode The S2387-66R is a four-pixel silicon PIN photodiode with sensitivity in the ultraviolet to near-infrared spectrum. The four-pixel format supports position sensing, for example for laser beam alignment. peculiarity - Four (2 × 2) pixel format - Low crosstalk: maximum 2% - Wide spectral response range: 190 to

Product Description: S2387-66R Silicon Photodiode Is Suitable For General Purpose Photometers In The Visible To Infrared Band Features: Four pixel silicon PIN photodiode The S2387-66R is a four-pixel silicon PIN photodiode with sensitivity in the ultraviolet to near-infrared spectrum. The four-pixel format supports position sensing, for example for laser beam alignment. peculiarity - Four (2 × 2) pixel format - Low crosstalk: maximum 2% - Wide spectral response range: 190 to

Product Description: S5991-01 S5991-11 Position Sensitive Detector Light Sensor 2D PSD With Improved Surface Mount Four-sided Models Features: Improved four-sided models for surface mount peculiarity - Large sensitive surface: 9 × 9 mm - Chip carrier package for surface mount thin package: 1.26 mmt - Improved four-sided model (pincushion type) provides excellent position detection - Provide evaluation board - Packaging Tray: S5991-01 Volume: S5991-11 Detailed parameter

Product Description: S6775 Silicon PIN Photodiode Plastic SIP (Single-in-line package) Features: S6775 is a silicon PIN photodiode with a large acceptor surface molded into a clear plastic SIP for detection in the near infrared range. This silicon PIN photodiode has the characteristics of high sensitivity, high speed response and large light absorption. peculiarity - Visible to the near infrared - High sensitivity - High speed response - Get the shine - Plastic package: 7 × 7

Product Description: S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band Features: Silicon photodiode molded into a transparent plastic package peculiarity - Visible to near infrared band (suppressed infrared sensitivity type) Detailed parameter Receiving surface 2.4 × 2.8 mm Encapsulation plastic Package category -- Heat dissipation uncooled type Reverse voltage (Max.) 10 V Sensitivity wavelength range 320 to 1000 nm Maximum sensitivit

Product Description: S7509 Silicon PIN Photodiode Is Used For Spatial Light Transmission Where A Wide Field Of View Is Required Features: S7509 is a silicon PIN photodiode packaged in a chip carrier for surface mount using automatic reflow soldering technology. The photodiode has a large light-receiving surface and is suitable for spatial light transmission requiring a wide field of view. Other uses include POS scanners, power meters, and analytical instruments. peculiarity -

Product Description: S9702 Silicon Photodiode Array RGB Color Sensor Features: RGB Color sensor The S9702 is a color sensor in a molded plastic package with a 3-channel (RGB) photodiode sensitive to the blue (λp=460 nm), green (λp=540 nm), and red (λp=620 nm) regions of the spectrum. The S9702 has a 3-segment (RGB) light-receiving surface of □1 mm. Compared to the previous model (S9032-02), the S9702 is significantly reduced in size (55% reduction in cubic volume of package