Infrared Photoelectric Sensor

High-speed pyroelectric flame sensor with I²C interface and 15-23bit ADC. Compact TO-39 package, wide -40 to +85°C range, and low power consumption. Ideal for industrial and safety applications.

The S1227-66BR silicone photodiode offers precision photometry from UV to visible light. Features a 5.8x5.8mm receiving surface, ceramic encapsulation, 0.43 A/W sensitivity at 720nm, and low dark current. Ideal for industrial and scientific applications requiring high accuracy and reliability.

High sensitivity from visible to near infrared (320-1100 nm) with low dark current (50 pA max) and 0.6 A/W sensitivity. Features fast 10 µs rise time, high reliability, and linearity. Ideal for universal photometric determination.

High sensitivity silicon photodiode with 1.1x1.1mm receiving surface, ideal for UV to near-infrared precision photometry. Features low capacitance, high reliability, and fast 0.1μs rise time. Suitable for uncooled TO-18 metal package applications.

Low dark current silicon photodiode for accurate low to high illumination measurement. Premolded package blocks stray light. Ideal for exposure meters, illuminometers, and optical switches. Reliable and precise.

High UV sensitivity with 75% QE at 200nm and suppressed NIR sensitivity. Low dark current of 20pA ensures precision photometry. Reliable silicon photodiode ideal for visible light measurement applications.

The YJJ G6849 four-quadrant InGaAs PIN photodiode array features a φ2 mm photosensitive area, low noise, and high reliability. Ideal for light spot position detection and measurement equipment. Sensitivity range 0.9 to 1.7 μm with peak at 1.55 μm. TO-5 package, non-cooled.

High-sensitivity silicon photodiode with 0.52 A/W photosensitivity and 2.4x2.8mm active area. Uncooled design ensures stable performance in industrial automation, security, and NDIR sensing. Customizable with 20V reverse voltage and low dark current.

The S9706 digital color sensor measures RGB tri-color simultaneously with 12-bit resolution. Features two-step sensitivity switching (1:9 ratio), low 3.3V operation, and CMOS monolithic IC. No external components needed. Ideal for precise color detection in industrial applications.

High UV sensitivity with 75% QE at 200nm and suppressed IR sensitivity for precise photometry. Low dark current (20pA max) and 0.36 A/W sensitivity. Available in quartz window and resin potting types. Ideal for UV to visible band applications.

High-speed silicon PIN photodiode S5971 for visible to near-infrared detection. Features 100 MHz cut-off frequency, low dark current, and high reliability. Ideal for optical communications and high-speed photometry.

High sensitivity silicon photodiodes for UV to IR photometry. Features low capacitance, fast 3μs rise time, and high UV QE 75% at 200nm. Ceramic package with 10x10mm active area. Ideal for precision measurement applications.

LIM-252 infrared sensor with voltage mode JFET in TO39 housing. Features 2.0x2.0mm lithium-tantalate element, 340 V/W responsivity, and 150 ms thermal time constant. Supports custom IR filters, operates from -40 to +85°C. Ideal for precise pyroelectric detection.

Ceramic package photodiode with low dark current. Spectral response 320-730nm (S1133) or 320-1000nm (S1133-14). Ideal for exposure meters, illuminometers, and camera auto exposure. High reliability and custom options available.

High sensitivity silicon photodiodes for UV to near-infrared precise photometry. Features low capacitance, fast 0.1μs rise time, and high reliability. Ideal for industrial and scientific applications. Custom options available.

High-sensitivity silicon photodiode with 10x10mm ceramic package, 190-1000nm spectral range, and 0.36A/W responsivity at 720nm. Features low dark current (50pA) and 7μs rise time. Ideal for UV to visible precision photometry with infrared suppression.

Precision photodiode for UV to visible wavelengths with infrared suppression. Features 10x10mm active area, 0.5A/W sensitivity at 960nm, low dark current of 20pA, and fast 7μs rise time. Ideal for photometry and scientific instruments.

High-temperature resistant infrared source with 40±20Ω hot resistance and 2.2x2.2mm² active area. Features adjustable input power, fast modulation, and >100,000h service life. Ideal for NDIR gas analysis in industrial and commercial applications.

High-sensitivity silicon photodiode in transparent plastic package, covering 320-1000nm range. Features 0.48 A/W photosensitivity, 20 pA dark current, and 0.5μs rise time. Ideal for visible to near-infrared detection with suppressed infrared sensitivity.

S12742-254 silicon photodiode with integrated band interference filter for precise 254 nm monochromatic light detection. Features 10 nm FWHM spectral width, 0.018 A/W sensitivity, and low dark current. Customizable for other wavelengths. Ideal for accurate photometric measurements.