Flash Memory IC Chip

High temperature glass passivated junction with low forward voltage drop. Compact surface mount package for automated handling. AEC-Q101 qualified, Pb-free and RoHS compliant. Ideal for automotive and industrial power applications.

30V, 6.3mΩ N-channel NexFET power MOSFET in compact SON 3.3mm package. Low Qg and RDS(on) minimize switching and conduction losses. RoHS, halogen-free, and avalanche rated. Ideal for synchronous buck converters in networking and telecom systems.

The FDMS6681Z is a -30V P-Channel PowerTrench MOSFET designed for low-loss load switching. Features ultra-low rDS(on) of 3.2mΩ, 8kV HBM ESD protection, and MSL1 robust package. Ideal for notebook and server load switches. RoHS compliant.

High efficiency N-Channel MOSFET designed for DC/DC converters. Features 100V 3.7A rating, low RDS(ON) of 120mΩ, fast switching, and low gate charge. Ideal for synchronous and conventional PWM controllers.

High power P-Channel MOSFET with ultra-low RDS(ON) for efficient load switching. Extended VGSS range of -25V and 8kV HBM ESD protection ensure reliability in battery-powered devices. RoHS compliant and lead-free.

High-performance N-Channel MOSFET with ultra-low 3.7mΩ on-resistance and 57nC gate charge. Fast switching, RoHS compliant, ideal for synchronous rectification, motor drives, and UPS systems. Custom options available.

N-Channel PowerTrench MOSFET with Shielded Gate technology for low on-resistance and superior switching. Ideal for DC-DC converters, motor drives, and solar applications. 100% UIL tested, RoHS compliant, and MSL1 rated.

N-Channel logic level MOSFET from ON Semiconductor. 25V, 0.22A continuous, 0.5A peak. Low RDS(on) of 4Ω at 4.5V. Ideal for 3V circuits, replaces multiple digital transistors. ESD rugged >6kV HBM.

FDMS3662 N-Channel MOSFET with 100V drain-source voltage and low 14.8mΩ on-resistance. Optimized for DC-DC conversion, it features advanced PowerTrench technology for superior switching performance. 100% UIL tested, RoHS compliant, and MSL1 rated for robust industrial use.

The FDMC6679AZ MOSFET minimizes losses in load switch applications with ultra-low rDS(on) of 10 mΩ and 8 kV ESD protection. Ideal for notebook and server load switches. Lead-free and RoHS compliant.

FDC3535 P-Channel MOSFET with advanced PowerTrench technology for ultra-low rDS(on) and fast switching. Ideal for load switch and synchronous rectifier applications. 100% UIL tested, RoHS compliant, and offers high power handling in a compact surface mount package.

High-efficiency half-bridge power block for synchronous buck converters. Supports up to 40A operation at 1.5MHz with 90% system efficiency. Compact 5mm x 6mm SON package. RoHS compliant, halogen free, and lead-free. Ideal for high-current POL and multiphase DC-DC converters.

High-efficiency 30V synchronous buck NexFET power block with 93.5% efficiency at 15A and up to 25A operation. Supports high-frequency switching up to 1.5MHz in a compact 3.3mm SON package. RoHS compliant, halogen free, and lead-free. Ideal for POL converters and multiphase designs.

30V common-source dual N-channel MOSFET with ultra-low drain-to-drain on-resistance (27mΩ at 8V). Optimized for 5V gate drive, avalanche rated, RoHS compliant. Ideal for adaptor/USB input protection in notebooks and tablets.

Ultra-low Qg and Qgd P-channel MOSFET with low RDS(on) of 7.7mΩ at -4.5V. Designed for DC-DC converters, battery management, and load switches. RoHS compliant, Pb and halogen free. Excellent thermal performance in compact SON 3.3mm package.

High-efficiency 60V N-channel NexFET power MOSFET with ultra-low Qg and Qgd for minimized switching losses. Features 1.8mΩ on-resistance, avalanche rated, RoHS and halogen free. Ideal for DC-DC conversion, synchronous rectification, and motor control in a compact SON 5x6mm package.

Ultra-low Qg and Qgd 60V N-Ch NexFET power MOSFET in SON 5x6mm package. Features 7.8mΩ on-resistance, logic level gate drive, avalanche rated, and RoHS compliant. Ideal for DC-DC conversion, synchronous rectification, and motor control.

Ultra-low Qg and Qgd NexFET power MOSFET for DC-DC conversion and synchronous rectification. 40V, 5.3mOhm RDS(on) at 10V, logic level, avalanche rated, RoHS and halogen free. Available in SON 5x6mm package with tape and reel options.

Ultra-small 0402 N-channel MOSFET with 12V drain-source voltage and 140mΩ on-resistance. Features low Qg, low threshold voltage, and integrated ESD protection. Ideal for load switching and battery applications. RoHS compliant.

High-speed switching diode in SMD package with trr ≤ 4ns and low capacitance ≤ 1.5pF. AEC-Q101 qualified for automotive use. Ideal for high-speed switching, reverse polarity protection, and general-purpose applications.