Flash Memory IC Chip

Integrated 20A DC-DC converter module with up to 96% efficiency, 0.6V to 3.6V adjustable output, and 1% reference accuracy. Features selectable frequency, overcurrent protection, and -40°C to 85°C operation. Compact 15x16mm QFN package simplifies design.

Integrated 6A power module with up to 96% efficiency, 1% reference accuracy, and adjustable frequency. Compact 9x15x2.8mm QFN package simplifies design. Ideal for DSP, FPGA, and communications infrastructure.

Compact 3.5mm x 3.5mm step-down module with integrated inductor. Supports 3V-17V input, 0.9V-6V adjustable output, up to 95% efficiency. Ideal for space-constrained LDO replacement and point-of-load conversions.

Compact step-down DC/DC nano module delivering up to 650mA with 2.7V to 5.5V input range. Features integrated inductor, up to 95% efficiency, adjustable output, and thermal protection. Ideal for space-constrained point-of-load applications.

Ultra-compact, high-efficiency dual-string white LED driver for LCD backlighting. Drives up to 12 series LEDs at 25 mA per string. Features 11-bit dimming, I2C/PWM control, auto frequency mode, and configurable OVP/OCP. Ideal for smartphones and tablets.

Half-bridge power block optimized for 5V gate drive synchronous buck converters. Delivers up to 15A operation with 90% system efficiency at 10A. Ultra-low profile 0.48mm LGA package with double-side cooling. RoHS compliant, halogen and Pb free.

High efficiency 94.7% at 8A half-bridge power block for synchronous buck/boost converters. Supports up to 15A operation and 1.5MHz frequency. Compact 3.3mm SON package, RoHS compliant, halogen free.

Ultra-low Qg and Qgd 60V N-Channel NexFET power MOSFET in SON 5x6mm package. Features 4.7 mΩ on-resistance, low thermal resistance, avalanche rated, and RoHS compliant. Ideal for DC-DC conversion, synchronous rectification, and motor control. Available in tape and reel.

Ultra-low Qg and Qgd 40V N-Channel NexFET power MOSFET in SON 5x6mm package. Features 2.5mOhm on-resistance, avalanche rated, RoHS compliant. Ideal for DC-DC conversion and synchronous rectifier applications.

This 30V N-channel NexFET power MOSFET features ultra-low 1.9mΩ RDS(on) and low gate charge for high efficiency in synchronous buck converters. Avalanche rated, RoHS compliant, and halogen free. Ideal for networking, telecom, and computing power systems.

High-efficiency 30V N-channel NexFET MOSFET with ultra-low 0.84mΩ RDS(on) and low Qg/Qgd for minimal switching losses. Ideal for synchronous buck converters in networking and telecom. RoHS, halogen-free, and avalanche rated. Available in tape and reel.

30V N-Channel NexFET MOSFET with ultra-low 1.2mOhm on-resistance and 30nC gate charge. Designed for synchronous buck converters and rectification. RoHS compliant, halogen free, and avalanche rated. Available in SON 5x6mm package.

CSD17313Q2 NexFET power MOSFET, 30V drain-source voltage, 24mΩ on-resistance. Optimized for 5V gate drive with ultra-low Qg and Qgd. RoHS compliant, halogen-free, and Pb-free. Ideal for DC-DC converters and battery management. Available in compact SON 2x2mm package.

This 25V, 0.9mΩ NexFET power MOSFET in a 5x6mm SON package delivers ultralow resistance and gate charge for efficient synchronous buck converters. RoHS, halogen-free, and avalanche rated for reliable telecom and computing power systems.

High-efficiency N-channel Power MOSFET with ultra-low 0.0065 Ω on-resistance and 200 W power dissipation. STripFET F6 trench gate technology ensures low gate charge, high avalanche ruggedness, and reduced power loss for switching applications.

The STP55NF06 is a 60V, 55A N-channel Power MOSFET using STripFET technology for low gate charge and input capacitance. Ideal for high-efficiency isolated DC-DC converters in telecom and computer applications. 100% avalanche tested with exceptional dv/dt capability.

High temperature glass passivated junction with low forward voltage drop. Compact surface mount package for automated handling. AEC-Q101 qualified, Pb-free and RoHS compliant. Ideal for automotive and industrial power applications.

General purpose Zener diode rated at 11V and 500mW. Features wide reverse voltage range, ESD rating >16 kV, and Pb-free design. Ideal for high density automated assembly. AEC-Q101 qualified for automotive use.

The TS5A23159DGSR is a bidirectional 2-channel SPDT switch with 1 Ohm low ON-state resistance, break-before-make switching, and 5.5V tolerant control inputs. Ideal for portable devices, audio routing, and data acquisition systems. Supports 1.65V to 5.5V operation.

Low RDS(on) minimizes conduction losses; low capacitance and optimized gate charge reduce switching losses. Pb-Free. Ideal for CPU power delivery, DC-DC converters, and low-side switching. Reliable performance for industrial applications.