Single FETs, MOSFETs
1200V Silicon Carbide MOSFET Siliup SP52N120CTF with Low RDSon and High Voltage Blocking Capability
Product Overview The SP52N120CTF is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. It features high-speed switching with low capacitances, high blocking voltage with low RDS(on), and is designed for easy paralleling and simple driving. This RoHS compliant device is suitable for a wide range of applications including Power Factor Correction Modules, Switch Mode Power Supplies, Photovoltaic Inverters, UPS Power Supplies, Motor Drives, High
N Channel Power MOSFET Siliup SP010N02GHTD Featuring Split Gate Trench Technology and Low Gate Charge Design
Product Overview The SP010N02GHTD is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for PWM applications, hard switched and high-frequency circuits, and power management solutions. Product Attributes Brand:
1200V SiC MOSFET Module S1P14R120HSE-A Suitable for Smart Grid Transmission and Distribution Systems
Product Overview The S1P14R120HSE-A is a 1200V / 14m SiC Power MOSFET Module designed for high-speed switching applications. It offers very low switching losses, high blocking voltage with low on-resistance, and temperature-independent turn-off switching losses. With ultra-low thermal resistance and an isolated back-side, this module is suitable for demanding applications such as solar power optimizers, UPS systems, motor drives, high power converters, photovoltaic and wind
P Channel MOSFET 100V 4A Continuous Drain Current Siliup SP010P190T1 Surface Mount Low On Resistance
Product Overview The SP010P190T1 is a 100V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a continuous drain current of -4A and features low on-resistance characteristics at typical operating voltages. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP010P190T1 Device Code
60V P Channel MOSFET Siliup SP60P23TH with Fully Characterized Avalanche Voltage and Current Ratings
Product Overview The SP60P23TH is a 60V P-Channel MOSFET designed for load switch applications. It features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and good stability with high EAS. The device offers excellent heat dissipation in its TO-252-2L package. Product Attributes Brand: Shanghai Siliup Semiconductor Technology Co. Ltd. Product Code: SP60P23TH Package: TO-252-2L (G:1 D:2 S:3) Origin: Shanghai Technical
Power MOSFET 40V N Channel Siliup SP40N01GTD with Low Gate Charge and High Frequency Circuit Compatibility
Product Overview The SP40N01GTD is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This device is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched and high frequency circuits, and power management solutions. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code:
100V N Channel Power MOSFET Siliup SP010N02AAGHTO featuring split gate trench technology and low RDS
Product Overview The SP010N02AAGHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is designed for applications requiring efficient power management, including PWM applications and hard-switched, high-frequency circuits. It has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup
200V N Channel Power MOSFET Siliup SP020N08GHTQ with Fast Switching and Low Gate Charge Features
Product Overview The SP020N08GHTQ is a 200V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for high-speed power switching applications, this MOSFET offers fast switching speeds, low gate charge, and low RDS(on). Its features include low reverse transfer capacitances and 100% single pulse avalanche energy testing. It is ideal for use in DC-DC converters and power management systems. Product Attributes Brand: Siliup Semiconductor Technology Co.
85V N Channel MOSFET Siliup SP85N02AGHTF with Split Gate Trench Technology and Low RDS On Resistance
Product Overview The SP85N02AGHTF is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP85N02AGHTF
Dual P Channel MOSFET Siliup SP2301DTS 20V 3A Drain Current SOT 23 6L Package for Battery Switches
Product Overview The SP2301DTS is a 20V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount SOT-23-6L package. This MOSFET is suitable for applications such as battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: Dual P-Channel MOSFET Package: SOT-23-6L Device Code: 2301D Technical Specifications Parameter Symbol Conditions
Fast Switching 650V MOSFET Siliup SP30HF65TQ with Low Gate Charge and Continuous Drain Current
Product Overview The SP30HF65TQ is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for fast switching applications, it features low gate charge and low RDS(on). This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard-switched and high-frequency circuits, and power management systems. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: SP30HF65TQ Package: TO-220-3L
Power Switching MOSFET 150V N Channel with Low RDSon and Fast Switching Siliup SP015N06GHTG in TO 220F Package
Product Overview The SP015N06GHTG is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. It is supplied in a TO-220F package. Product Attributes Brand: Siliup Semiconductor Technology
20V P Channel MOSFET Siliup SP2305AT2 with Continuous Drain Current of 4.7A in Compact SOT 23 Package
Product Overview The SP2305AT2 is a 20V P-Channel MOSFET designed for applications such as PA switches and load switches. It offers a low on-resistance of 33m at -4.5V and 43m at -2.5V, with a continuous drain current of -4.7A. This MOSFET is housed in a compact SOT-23 package. Product Attributes Brand: Shanghai Siliup Semiconductor Technology Co. Ltd. Model: SP2305AT2 Type: P-Channel MOSFET Voltage Rating: 20V Package: SOT-23 Origin: Shanghai Version: Ver-1.1 Publication
Shenzhen ruichips Semicon RU30120S N Channel MOSFET designed for power management and DC DC converters
Product OverviewThe RU30120S is an N-Channel Advanced Power MOSFET from Ruichips Semiconductor, designed for high-efficiency applications. It features a Super High Dense Cell Design, Ultra Low On-Resistance, and is 100% Avalanche Tested. This device is ideal for DC-DC converters and other power management applications requiring robust performance and reliability. Lead Free and Green Devices are available, complying with RoHS standards.Product AttributesBrand: Ruichips
Siliup SP80N120CTK Silicon Carbide MOSFET Suitable for Photovoltaic Inverters and Switch Mode Power Supplies
Product Overview The SP80N120CTK is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-speed switching applications, it offers a low on-resistance (RDS(on)TYP of 13m@18V) and high blocking voltage. Its characteristics, including easy paralleling and simple driving, make it suitable for demanding applications such as power factor correction modules, switch mode power supplies, photovoltaic inverters, UPS power supplies, and
Low On State Resistance Power MOSFET SANKEN MLD685D Suitable for Electric Power Steering Applications
Product OverviewThe SANKEN ELECTRIC MLD685D is a power MOSFET designed for high current switching applications. It features low on-state resistance and a built-in gate protection diode, making it suitable for demanding applications such as electric power steering. The device is housed in a MT100 (TO3P) package.Product AttributesBrand: SANKEN ELECTRICModel: MLD685DPackage: MT100 (TO3P)Date: Feb. 2011Technical SpecificationsCharacteristicSymbolRatingUnitTest ConditionsDrain to
Power Management MOSFET Shenzhen ruichips Semicon RU6888M N Channel 60V 62A RoHS Compliant Device
Product OverviewThe RU6888M is an N-Channel Advanced Power MOSFET featuring a Super High Dense Cell Design for reliable and rugged performance. It offers 60V/62A capability with a low RDS(ON) of 7m(Typ.)@VGS=10V. This device is 100% avalanche tested and is available in Lead Free and Green Devices (RoHS Compliant) options. It is suitable for Power Management applications.Product AttributesBrand: Ruichips SemiconductorOrigin: CHINACertifications: RoHS CompliantTechnical
Fast Switching MOSFET Siliup SP47M65TF 650V with Low Gate Charge and 47A Continuous Drain Current in TO247 Package
Product Overview The SP47M65TF is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for fast switching applications. It features low gate charge and low RDS(on), with a continuous drain current of 47A at 25. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched and high frequency circuits, and power management systems. It comes in a TO-247 package. Product Attributes Brand: Siliup
RU8590S R N Channel Power MOSFET by Shenzhen ruichips Semicon suitable for demanding power switching
RU8590S N-Channel Advanced Power MOSFET The RU8590S is an N-Channel Advanced Power MOSFET designed for high-speed power switching applications. It offers ultra-low on-resistance, fast switching characteristics, and is fully avalanche rated, making it suitable for demanding applications. This device operates at an extended temperature range of 175C and is available in Lead Free and Green Devices (RoHS Compliant) options. Product Attributes Brand: Ruichips Semiconductor Co.,
40V N Channel Power MOSFET Siliup SP40N06GNJ with Low RDSon and Single Pulse Avalanche Energy Tested
Product Overview The SP40N06GNJ is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, PWM applications, and DC-DC converters. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: SP40N06GNJ Technical Specification