Single FETs, MOSFETs
Power Management Solutions Featuring Siliup SP40P10NJ 40V P Channel MOSFET with Fast Switching Speed
Product Overview The SP40P10NJ is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low On-Resistance (10.5m typ. at -10V, 14m typ. at -4.5V), and 100% Single Pulse avalanche energy tested. This MOSFET is suitable for applications such as DC-DC Converters and Power Management. It is available in a PDFN3X3-8L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: SP40P10NJ Package: PDFN3X3
Low On Resistance SOT 723 Package Siliup SP2002KT7 20V N Channel MOSFET for Power and Current Handling
Product Overview The SP2002KT7 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device features ESD protection up to 2KV. Its key applications include battery switches and DC/DC converters. The MOSFET offers a low on-resistance and is available in a compact SOT-723 package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP2002KT7 Technology: N-Channel
Power Switching MOSFET Siliup SP40N01GNK 40V N Channel Device with Low RDSon and PDFN5X6 8L Package
Product Overview The SP40N01GNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications and DC-DC converters. It comes in a PDFN5X6-8L package. Product Attributes Brand: Siliup Semiconductor Technology Co.
60V N Channel MOSFET Siliup SP60N02BGNK with Low Gate Charge and Tested Single Pulse Avalanche Energy
Product Overview The SP60N02BGNK is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for hard switched and high-frequency circuits, as well as uninterruptible power supplies. It is available in a PDFN5X6-8L package.
1200V Silicon Carbide MOSFET SG2M027120LJ Low On Resistance Temperature Independent Switching Losses
Product Overview The SG2M027120LJ is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, fully controllable dv/dt, and high blocking voltage with low on-resistance. The device features a fast intrinsic diode with low reverse recovery charge (Qrr) and temperature-independent turn-off switching losses. Its benefits include reduced cooling effort and requirements, improved efficiency, increased power
Power Management Device Siliup SP40N06NJ 40V N Channel MOSFET with Fast Switching and Low On Resistance
Product Overview The SP40N06NJ is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low on-resistance (6.3m@10V, 9.5m@4.5V), and 100% single pulse avalanche energy testing. This MOSFET is suitable for applications such as DC-DC converters and power management. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Line: SP40N06NJ Technology: N-Channel MOSFET Package: PDFN3X3-8L Device Code: 40N06
Surface Mount 30V MOSFET Siliup SP3012CNJ ROHS Compliant Halogen Free for DC DC Converters Motor Control
Product Overview The SP3012CNJ is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mount applications, this ROHS Compliant & Halogen-Free device offers fast switching speeds and is 100% Single Pulse avalanche energy tested. It is ideal for use in DC-DC converters and motor control applications. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: SP3012CNJ Certifications: ROHS Compliant & Halogen-Free Package
N Channel MOSFET Siliup SP010N14HTQ Featuring Fast Switching and Low Gate Charge for Power Management
Product Overview The SP010N14HTQ is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This MOSFET features fast switching, low gate charge, and low Rdson, making it suitable for power switching applications, DC-DC converters, and power management systems. It is designed for high efficiency and performance in demanding electronic circuits. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP010N14HTQ Channel Type: N-Channel
Sichainsemi SG2M040075JJ SiC Power MOSFET Offering Low Reverse Recovery and High Switching Frequency
Product Overview The SG2M040075JJ is a 750V Silicon Carbide (SiC) Power MOSFET from Sichain Semiconductor, designed for high-speed switching applications. It offers very low switching losses, fully controllable dv/dt, high blocking voltage with low on-resistance, and a fast intrinsic diode with low reverse recovery. These features contribute to reduced cooling efforts, improved efficiency, increased power density, and the ability to operate at higher system switching
P Channel MOSFET Siliup SP30P25T8 30V Surface Mount Device Designed for Battery Switch and Converter
Product Overview The SP30P25T8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a low on-resistance and robust performance characteristics. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Line: SP30P25T8 Technology: P-Channel MOSFET Package: SOT-89 Technical Specification
Power 30 Volt N Channel MOSFET with Low Gate Charge and High Continuous Drain Current Siliup SP30N02TH
Product Overview The SP30N02TH is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) at both 10V and 4.5V gate drive. This MOSFET is 100% tested for single pulse avalanche energy. It is suitable for applications such as DC-DC converters and load switching. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 30N02 Package: TO-252 Material: Silicon Technical Specifications
40V N Channel Power MOSFET Siliup SP40N01AGMT ideal for high frequency circuits and power management
Product Overview The SP40N01AGMT is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for PWM applications, hard-switched, and high-frequency circuits, as well as power management solutions. It features 100% single pulse avalanche energy testing for enhanced reliability. Product Attributes Brand: Siliup Semiconductor
20V N Channel MOSFET Siliup SP2002KT5 with Low RDSon and High Current Handling Capability
Product Overview The SP2002KT5 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface mount device features ESD protection (2KV) and is suitable for applications such as battery switches and DC/DC converters. It offers a low RDS(on) at various gate-source voltages. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: N-Channel MOSFET Package: SOT-523 ESD Protected: 2KV
Low on resistance P channel MOSFET Siliup SP1216NQ suitable for power management and DC DC converters
Product Overview The SP1216NQ is a 12V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features low on-resistance and low input capacitance, making it suitable for power management functions and DC-DC converters. This device is available in a PDFN2X2-6L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: Q1216 Package: PDFN2X2-6L Technical Specifications Parameter Symbol Conditions Min. Typ. Max. Unit Product Summary
Power Switching 20V Dual N Channel MOSFET Siliup SP9926ADP8 with Low Gate Charge and Fast Switching
Product Overview The SP9926ADP8 is a 20V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard-switched and high-frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 9926 Package: SOP-8L Technical
20V N Channel MOSFET Siliup SP2002KT5J Featuring Low Logic Level Gate Drive for Portable Electronics
Product Overview The SP2002KT5J is a 20V N-Channel MOSFET designed for efficient load and power switching applications. It features a surface mount package, low RDS(on), and operates at low logic level gate drive, making it suitable for interfacing switching, battery management in ultra-small portable electronics, and logic level shifts. This ESD-protected MOSFET is manufactured by Shanghai Siliup Semiconductor Technology Co. Ltd. Product Attributes Brand: Shanghai Siliup
1200V Silicon Carbide Power MOSFET Sichainsemi SG2M040120JH Low Reverse Recovery Low On Resistance Device
Product Overview The SG2M040120JH is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt. This MOSFET features a high blocking voltage with low on-resistance and a fast intrinsic diode with low reverse recovery. Its performance characteristics lead to reduced cooling efforts, improved efficiency, increased power density, and the ability to
SG2M020170HJ 1700V Silicon Carbide MOSFET designed for high frequency switching and power conversion
SG2M020170HJ 1700V Silicon Carbide Power MOSFET Product Overview The SG2M020170HJ is a 1700V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, high blocking voltage with low on-resistance, and temperature-independent turn-off switching losses. Key benefits include reduced cooling effort, improved efficiency, increased power density, and the ability to operate at higher system switching frequencies. This
Siliup SP40N25DP8 Dual N Channel MOSFET 40V Featuring Low RDS on and Fast Switching for Power Circuits
Product Overview The SP40N25DP8 is a 40V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 40N25 Package: SOP-8L Technical
Power MOSFET Siliup SP85N04BHNK N Channel Transistor Ideal for Switching and Amplification Purposes
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