Single IGBTs

Product OverviewThe FGH40T65SHD-F155 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-Charger, and Solar String Inverter applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen

Product OverviewThe JNG25T65PS1 is a 650V, 25A Trench IGBT from JIAEN Semiconductor, designed for high-speed switching and improved system efficiency. It features soft current turn-off waveforms and a square RBSOA, making it suitable for applications such as motor control, general inverters, and other soft switching scenarios. These IGBTs offer lower losses and higher energy efficiency.Product AttributesBrand: JIAENModel: JNG25T65PS1Technical SpecificationsParameterSymbolTest

JNG25N120HS IGBTJIAEN NPT IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. They are designed for high-speed switching and provide higher system efficiency with soft current turn-off waveforms and square RBSOA using NPT technology.Product AttributesBrand: JIAENModel: JNG25N120HSTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitsCollector

JNG20T65FS1 IGBT The JIAEN Trench IGBTs offer lower losses and higher energy efficiency, making them ideal for applications such as motor control, general inverters, and other soft switching applications. Key features include a 650V, 20A rating, low VCE(sat) of 2.0V (typ.), high-speed switching, and soft current turn-off waveforms. Product Attributes Brand: JIAEN Product Series: Trench IGBTs Package Type: TO-220F Technical Specifications Parameter Symbol Test Conditions Min.

Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as Motor control, general inverter, and other soft switching applications. This IGBT features 650V, 40A capability with a typical VCE(sat) of 2.0V at VGE=15V and IC=40A. It provides high-speed switching, higher system efficiency, soft current turn-off waveforms, and a square RBSOA.Product AttributesBrand: JIAENProduct Series: JNG40T65HS1Package Outline: TO247Technical

Product OverviewThe FF600R12ME4 is an EconoDUAL3 IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled Diode with NTC. It offers low VCEsat with a positive temperature coefficient, high power density, and an isolated base plate. Ideal for high power converters, motor drives, servo drives, UPS systems, and wind turbines.Product AttributesBrand: Infineon (implied by module type and datasheet format)Model: FF600R12ME4Module Type: EconoDUAL3IGBT Technology: Trench

Product OverviewThe IGW40N60TP is a 600V DuoPack IGBT from Infineon's TRENCHSTOPTM Performance series. It utilizes TRENCHSTOPTM technology, offering very low VCEsat, low turn-off losses, short tail current, and low EMI. This IGBT is qualified according to JEDEC for target applications and is RoHS compliant. It is suitable for applications such as drives, solar inverters, uninterruptible power supplies, and converters with medium switching frequency.Product AttributesBrand:

Product OverviewThe IKP40N65H5 and IKW40N65H5 are high-speed 5th generation IGBTs featuring TRENCHSTOPTM 5 technology, copacked with RAPID 1 fast and soft antiparallel diodes. These devices offer best-in-class efficiency in hard switching and resonant topologies and serve as plug-and-play replacements for previous generation IGBTs. With a 650V breakdown voltage, low gate charge, and a maximum junction temperature of 175C, they are qualified according to JEDEC for target

Product OverviewThe IKW50N60H3 is a high-speed IGBT in Trench and Fieldstop technology, featuring a soft, fast recovery anti-parallel diode. This third-generation device offers very low VCEsat, low EMI, and a maximum junction temperature of 175C. It is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant. Ideal for high switching frequency applications such as uninterruptible power supplies and welding converters.Product AttributesBrand:

Product OverviewThe SPT50N65F1A1T8TL is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Its maximum junction temperature is 175C.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDModel: SPT50N65F1A1T8TLPackage: TO-247Origin: Shenzhen HuaXuanYang Electronics CO.,LTDPacking:

Product OverviewThe GWA40MS120DF4AG is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is AEC-Q101 qualified and designed for high-temperature operation up to 175, making it suitable for demanding applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen,

Product OverviewThe NGTG35N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-Charger, and Solar String Inverter applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen

AIGW50N65H5 Insulated Gate Bipolar TransistorThe AIGW50N65H5 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, and Solar String Inverters.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDModel: AIGW50N65H5Package: TO

Product OverviewThe IGW50N60H3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for various power electronic applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Its maximum junction temperature is 175C.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDModel: IGW50N60H3Package: TO-247Origin: Shenzhen HuaXuanYang Electronics CO.,LTDTechnical

Product OverviewThe IGW40N120H3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for UPS, EV-Charger, Solar String Inverter, and Energy Storage Inverter applications.Product AttributesBrand: HUAXUANYANGOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDModel: IGW40N120H

JNG40T120HS IGBT JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and a square RBSOA. Product Attributes Brand: JIAEN Model: JNG40T120HS Package: TO247 Technical Specifications Parameter Condition Min. Typ. Max. Units Absolute Maximum Ratings Collector

Product OverviewThe MBQ40T120QESTH is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficient power management.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: MBQ40T120QESTHTechnology: Trench and Field

Product OverviewThe IKQ140N120CH7XKSA1 is a 1200V, 140A IGBT designed for high-efficiency applications. It features high input impedance, low switching losses, low saturation voltage (VCE(SAT)), and low conduction loss. This device is copacked with a fast recovery diode, offering rugged transient reliability and low EMI. It is suitable for applications such as string solar inverters and EV-charging.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IKQ140N120C

Product OverviewThe APT68GA60B is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for applications such as UPS, EV-Chargers, and Solar String Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin:

Product OverviewThe GL75HF120F1UR1 is a 1200V, 75A IGBT half-bridge module featuring Planar Field-stop Technology for high RBSOA capability and low turn-off losses. It is ideal for applications such as inductive heating, welding, and high-frequency switching.Product AttributesBrand: JIAEN Semiconductor Co., LtdMaterial of Module Baseplate: CuInternal Isolation: Al2O3 (basic insulation, class 1, IEC 61140)Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitsNote