Single IGBTs

RGS00TS65DHRC11 Insulated Gate Bipolar Transistor The RGS00TS65DHRC11 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high efficiency and reliability. Product Attributes Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD Model: RGS00TS65DHRC1

Product OverviewThe IKW60N60H3 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring efficient power handling and fast switching capabilities.Product AttributesBrand: HUAXUANYANGManufacturer: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel:

Insulated Gate Bipolar Transistor DGTD120T40S1PTThe DGTD120T40S1PT is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is suitable for applications such as PTC, motor drives, and onboard chargers (OBC).Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: DGTD120T40S1PTOrigin: Shenzhen HuaXuanYang

Product OverviewThe JIAEN JNG30N120HS3 is an NPT IGBT designed for high efficiency and lower losses in applications such as induction heating (IH), UPS, and general inverters, particularly those employing soft switching techniques. It offers high-speed switching capabilities and soft current turn-off waveforms.Product AttributesBrand: JIAENTechnology: NPTTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitsAbsolute Maximum RatingsVCES1200VVGES+30VIC (TC=25

Product OverviewThe IXXH60N65B4 is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design enhances performance by reducing conduction losses, improving switching speed, and increasing avalanche energy. It is suitable for applications requiring efficient power conversion and robust operation.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IXXH60N65B4Technology: Advanced Trench and Field Stop (T-FS

Product Overview The IXYH40N120B3D1 is a 1200V, 40A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for UPS, EV-Chargers, and Solar String Inverters. Product Attributes Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD Origin: Shenzhen HuaXuanYang Electronics CO.,LTD Model:

Product OverviewThe IXGH40N120B2D1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen HuaXuanYang Electronic

Product OverviewThe IXXX160N65C4 is a 650V, 160A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C and RoHS compliance, this device is suitable for demanding industrial uses.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IXXX160N65C4Origin: Shenzhen

Product OverviewThe APT35GP120BG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: APT35GP120BGOrigin: Shenzhen HuaXuanYang

JNG30T65FJS1 IGBT The JNG30T65FJS1 is a 650V, 30A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency motor control and general inverter applications. It offers high ruggedness performance with a 10s short circuit capability and excellent current sharing for parallel operation. Key features include a typical VCE(sat) of 1.7V at VGE=15V and IC=30A, making it suitable for demanding home appliance and motor drive systems. Product Attributes Brand: JIAEN

Product DescriptionThe IKD06N60RF is a TRENCHSTOP RC-Series IGBT with an integrated diode, designed for hard switching applications up to 30 kHz. It offers space-saving advantages and features optimized switching losses (Eon, Eoff, Qrr), smooth switching performance for low EMI, and a maximum junction temperature of 175C. This IGBT is suitable for domestic and industrial drives, including compressors, pumps, and fans.Product AttributesBrand: InfineonTechnology: TRENCHSTOP RC

EconoPACK3 Module with TRENCHSTOPIGBT7 and Emitter Controlled 7 Diode and NTCThe EconoPACK3 module features TRENCHSTOPIGBT7 technology and an emitter-controlled 7 diode, designed for high power and thermal cycling capability. It offers low VCE,sat, overload operation up to 175C, and solder contact technology. The module integrates an NTC temperature sensor and a copper base plate with an Al2O3 substrate for low thermal resistance. This product is qualified for industrial

Product OverviewThe FGH75T65SHD-F155 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for demanding applications such as UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel:

Product OverviewThe STGWA75M65DF2 is a 650V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: STGWA75M65DF2Package: TO

Product OverviewThe APT50GT120B2RG is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for demanding applications such as UPS, EV-Chargers, and Solar String Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: APT50GT120B2RGOrigin:

Product OverviewThe IXYH120N65C3 is an Insulated Gate Bipolar Transistor (IGBT) featuring high input impedance, low saturation voltage, and low switching losses, contributing to high efficiency. It offers rugged transient reliability and low EMI, making it suitable for industrial applications such as UPS, EV-charging, string inverters, and welding.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDModel: IXYH120N65C3Web

Product OverviewThe IXXX160N65B4 is a 650V, 160A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C and RoHS compliance, this device is suitable for demanding power electronics applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin:

Product OverviewThe AFGHL75T65SQ is an Insulated Gate Bipolar Transistor (IGBT) offering high performance and reliability. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is designed for applications such as UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANGModel: AFGHL75T65SQManufacturer: HXY ELECTRONICS CO.

Product OverviewThe TRENCHSTOP 5 WR6 technology in an enhanced creepage and clearance package offers improved reliability against package contamination. It features a monolithic diode optimized for PFC and welding applications, stable temperature behavior, very low VCEsat, and low Eoff. The product also boasts easy parallel switching capability due to the positive temperature coefficient of VCEsat and low temperature dependence of VCEsat and Esw.Product AttributesBrand:

Product OverviewThe IGW50N65F5 is a high-speed 650V IGBT from Infineon's TRENCHSTOPTM 5 technology. It offers best-in-class efficiency in hard switching and resonant topologies, with low gate charge (QG) and a maximum junction temperature of 175C. This IGBT is an ideal fit for boost converters when paired with SIC Schottky Diodes and is qualified according to JEDEC standards for industrial applications. It is Pb-free and RoHS compliant.Product AttributesBrand: InfineonTechnol