Single IGBTs

Product OverviewThe F3L150R07W2E3_B11 is an EasyPACK IGBT module featuring Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode with PressFIT and NTC. It offers increased blocking voltage capability to 650V, low inductive design, low switching losses, and low VCEsat. Its applications include 3-Level, Solar, and UPS systems. The module utilizes an Al2O3 substrate with low thermal resistance and a compact design with PressFIT connection technology and integrated mounting

FP25R12W2T4 IGBT-ModuleThe FP25R12W2T4 is an IGBT module designed for inverter and brake-chopper applications. It offers high performance and reliability for various power electronic systems.Technical SpecificationsComponentParameterValueUnitConditionsIGBT, Inverter / Brake-ChopperVCES1200VTvj = 25CIC nom25ATC = 100C, Tvj max = 175CIC39ATC = 25C, Tvj max = 175CICRM50AtP = 1 msPtot175WTC = 25C, Tvj max = 175CVGES+/-20VVCE sat1.85 / 2.15 / 2.25 / 2.25VIC = 25 A, VGE = 15 V, Tvj

Product DescriptionThe IKW15N120H3 is a high-speed switching IGBT in a DuoPack configuration, featuring TRENCHSTOPTM technology. This technology provides a very low VCEsat, low EMI, and a very soft, fast recovery anti-parallel diode. It is designed for applications requiring high switching frequencies and offers a maximum junction temperature of 175C. The product is qualified according to JEDEC standards for target applications and is Pb-free and RoHS compliant.Product

Product OverviewThe FP100R12N2T7 EconoPIM2 module integrates TRENCHSTOP IGBT7 and Emitter Controlled 7 diodes with an NTC temperature sensor. It offers electrical advantages such as low VCEsat and overload operation up to 175C. Mechanically, it features an Al2O3 substrate with low thermal resistance, a copper base plate, and solder contact technology. This module is qualified for industrial applications.Product AttributesBrand: InfineonProduct Line: EconoPIM2Technology:

EasyPIM Module with TRENCHSTOP IGBT7 and Emitter Controlled 7 Diode and NTC The EasyPIM module is designed for auxiliary inverters, air conditioning systems, and motor drives. It features TRENCHSTOP IGBT7 technology for low VCEsat and overload operation up to 175C. The module boasts a 2.5 kV AC 1min insulation, an Al2O3 substrate with low thermal resistance, high power density, and a compact design utilizing solder contact technology. Product Attributes Brand: Infineon

Product OverviewThe IGW40T120FKSA1 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficient power handling.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IGW40T120FKSA1Origin: Shenzhen

Product OverviewThe IGW40N60TP is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to its positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-Chargers, and Solar String Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IGW40N60TPPackage: TO

Product DescriptionThe IXYH75N65C3H1 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as UPS, motor drives, boost converters, and portable power stations. The device offers a positive temperature coefficient, fast switching speeds, low VCE

Product OverviewThe IKW50N60H3 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching efficiency, and increasing avalanche energy capability. It is designed for applications such as UPS, motor drives, and boost converters, offering reliability and ruggedness.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel:

Product OverviewThe APT50GR120B2 is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: APT50GR120B2Origin: Shenzhen

Product OverviewThe AOKS40B65H1 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, it is suitable for UPS, EV-Charger, and Solar String Inverter applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: AOKS40B65H1Origin:

Product OverviewThe IRGP4263-EPBF is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key features include a maximum junction temperature of 175C and suitability for UPS, EV-Charger, and Solar String Inverter applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel

Product OverviewThe APT50GT120B2RDQ2G is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for UPS, EV-Chargers, and Solar String Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: APT50GT120B2RDQ2GOrigin: Shenzhen HuaXuanYang Electronics CO

Product OverviewThe IRG7PH46UD-EP is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficiency, featuring a positive temperature coefficient, fast switching speeds, low VCE(sat), and rugged construction. The device

Product OverviewThe IXYH100N65C3 is a 650V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage, making it suitable for demanding power electronics systems.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IXYH100N65C3Origin: Shenzhen HuaXuanYang Electronics CO.,LTDPackage: TO

Product OverviewJIAEN NPT IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. This device features 1200V, 15A rating with a typical VCE(sat) of 2.2V. It provides high-speed switching, higher system efficiency, and soft current turn-off waveforms with square RBSOA using NPT technology.Product AttributesBrand: JIAENTechnology: NPT IGBTTechnical SpecificationsParamet

Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as UPS, Motor drives, PFC, Portable power stations, and other soft switching applications. They are designed for reliable and rugged performance with fast switching capabilities.Product AttributesBrand: JIAENCertifications: Halogen Free and Green Devices AvailableTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitsIGBT Electrical CharacteristicsBVCESVGE=

Product OverviewThe TRENCHSTOP 5 WR6 technology in an enhanced creepage and clearance package offers improved reliability against package contamination. This IGBT is optimized for PFC and welding applications, featuring stable temperature behavior, very low VCEsat, low Eoff, and easy parallel switching capability due to the positive temperature coefficient of VCEsat. It exhibits low temperature dependence of VCEsat and Esw.Product AttributesBrand: TRENCHSTOPTechnology:

Product OverviewThe Infineon IKW40N120CS6 is a sixth-generation, high-speed soft-switching TRENCHSTOPTM IGBT 6, featuring Trench and Fieldstop technology. It offers high efficiency in both hard switching and resonant topologies, easy paralleling due to a positive temperature coefficient in VCEsat, low EMI, and low Gate Charge (Qg). It is copacked with a soft and fast recovery anti-parallel diode. The device is qualified for industrial applications according to JEDEC standards

Product OverviewThe HXY IGW50N65F5 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. Its maximum junction temperature is 175C, making it suitable for demanding applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IGW50N65F5Origin: Shenzhen HuaXuanYang