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China Soft Switching Trench IGBT JIAENSEMI JNG15T120HJS1 with 1200V Voltage Rating and Low On State Voltage for sale

Soft Switching Trench IGBT JIAENSEMI JNG15T120HJS1 with 1200V Voltage Rating and Low On State Voltage

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Product OverviewThe JNG15T120HJS1 is a Trench IGBT from JIAEN Semiconductor, designed for high-speed switching applications. It offers lower losses and higher energy efficiency, making it suitable for motor control, general inverters, and soft switching applications. Key features include a 1200V voltage rating, a typical on-state voltage of 1.7V, and soft current turn-off waveforms.Product AttributesBrand: JIAENOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedC

China High speed switching JIAENSEMI JNG75T120LZS1 IGBT module designed for soft switching and energy systems for sale

High speed switching JIAENSEMI JNG75T120LZS1 IGBT module designed for soft switching and energy systems

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JNG75T120LZS1 IGBT JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. Key features include 1200V, 75A rating, high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA. Product Attributes Brand: JIAEN Product Name: JNG75T120LZS1 Package: TO-264 Technical Specifications Parameter Test Conditions Min. Typ. Max. Units Absolute

China IGBT module Infineon FZ900R12KE4 featuring trench fieldstop IGBT4 technology for motor drive applications for sale

IGBT module Infineon FZ900R12KE4 featuring trench fieldstop IGBT4 technology for motor drive applications

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Product OverviewThe FZ900R12KE4 is a 62mm C-Series IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technology. Designed for high-power applications, it offers extended operating temperature, low switching losses, high robustness, and a positive temperature coefficient for VCEsat. Its robust mechanical features include 4 kV AC insulation, high creepage and clearance distances, and an isolated base plate, making it suitable for high power converters,

China TrenchStop series IGBT Infineon IKW50N60T 600V 50A with low EMI and rugged temperature stable design for sale

TrenchStop series IGBT Infineon IKW50N60T 600V 50A with low EMI and rugged temperature stable design

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Product DescriptionThe IKW50N60T from Infineon's TrenchStop Series is a Low Loss DuoPack featuring an IGBT in Trench and Fieldstop technology with a soft, fast recovery EmCon HE diode. It offers a very low VCE(sat) of 1.5V (typ.) and a maximum junction temperature of 175C, with a short circuit withstand time of 5s. Designed for frequency converters and uninterrupted power supply applications, its Trench and Fieldstop technology for 600V applications provides very tight

China rugged JIAENSEMI JNG50T120HIMU2 trench IGBT with fast switching and positive temperature coefficient for sale

rugged JIAENSEMI JNG50T120HIMU2 trench IGBT with fast switching and positive temperature coefficient

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Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as UPS, Motor drives, PFC, Portable power stations, and other soft switching applications. These devices are reliable, rugged, and feature a positive temperature coefficient and fast switching capabilities.Product AttributesBrand: JIAENCertifications: Halogen Free and Green Devices AvailableTechnical SpecificationsParameterValueUnitsConditionsAbsolute Maximum RatingsVCES

China 1200V 40A IGBT transistor JIAENSEMI JNG40T120HJS1 for motor control and inverter power applications for sale

1200V 40A IGBT transistor JIAENSEMI JNG40T120HJS1 for motor control and inverter power applications

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Delivery Time: Negotiable

Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. This IGBT features 1200V, 40A rating, a typical VCE(sat) of 1.7V, high-speed switching, and soft current turn-off waveforms.Product AttributesBrand: JIAENOrigin: www.jiaensemi.comTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitsAbsolute Maximum RatingsCollector-Emitter

China PrimePACK2 IGBT Module Infineon FF900R12IP4 with Trench Fieldstop IGBT4 and Emitter Controlled Diode for sale

PrimePACK2 IGBT Module Infineon FF900R12IP4 with Trench Fieldstop IGBT4 and Emitter Controlled Diode

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Product OverviewThe FF900R12IP4 is a PrimePACK2 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode with NTC. It offers extended operation temperature, high DC stability, and excellent short circuit capability. Ideal for high power applications such as auxiliary inverters, motor drives, traction drives, UPS systems, and wind turbines.Product AttributesBrand: Infineon (implied by datasheet format)Package Type: PrimePACK2Certifications: CTI > 400Technical

China TrenchStop Series IGBT Infineon IKW30N60T featuring EmCon HE diode and short circuit withstand time for power supplies for sale

TrenchStop Series IGBT Infineon IKW30N60T featuring EmCon HE diode and short circuit withstand time for power supplies

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Product OverviewThe IKW30N60T from Infineon's TrenchStop Series is a low-loss DuoPack IGBT featuring Trench and Fieldstop technology. It offers a very low VCE(sat) of 1.5V (typ.), a maximum junction temperature of 175C, and a short circuit withstand time of 5s. Designed for frequency converters and uninterruptible power supplies, its advanced technology provides tight parameter distribution, high ruggedness, temperature-stable behavior, very high switching speed, and low EMI.

China Robust Infineon FF150R12KS4 IGBT module featuring fast switching and low losses for power conversion for sale

Robust Infineon FF150R12KS4 IGBT module featuring fast switching and low losses for power conversion

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Product OverviewThe FF150R12KS4 is a 62mm C-Series IGBT module featuring a fast IGBT2 for high-frequency switching applications. It offers high short-circuit capability, low switching losses, and exceptional robustness with a positive temperature coefficient for VCEsat. Ideal for motor drives, medical applications, resonant inverters, servo drives, and UPS systems.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Copper baseplate, Al2O3 internal isolationCo

China Industrial grade 650V IGBT Infineon IKW75N65EL5 with low VCEsat and RAPID 1 antiparallel diode technology for sale

Industrial grade 650V IGBT Infineon IKW75N65EL5 with low VCEsat and RAPID 1 antiparallel diode technology

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Product OverviewThe IKW75N65EL5 is a 650V DuoPack IGBT from Infineon's Low VCE(sat) series, featuring TRENCHSTOPTM 5 technology copacked with a RAPID 1 fast and soft antiparallel diode. This IGBT offers a best-in-class tradeoff between conduction and switching losses due to its very low collector-emitter saturation voltage (VCEsat). It is designed for industrial applications requiring high performance and reliability, with a maximum junction temperature of 175C and qualified

China TrenchStop 2nd generation Infineon IKW25N120T2 1200V IGBT with rugged and temperature stable design for sale

TrenchStop 2nd generation Infineon IKW25N120T2 1200V IGBT with rugged and temperature stable design

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IKW25N120T2 TrenchStop 2nd generation Series The IKW25N120T2 is a 1200V IGBT from Infineon's TrenchStop 2nd generation series, designed for high-performance applications such as frequency converters and uninterrupted power supplies. It features a short circuit withstand time of 10s and offers excellent ruggedness and temperature-stable behavior. The device is easy to parallel due to a positive temperature coefficient in VCE(sat), low EMI, low gate charge, and a very soft,

China Trench IGBT JIAENSEMI JNG30T65HS1 with 30A Diode Continuous Forward Current and High Speed Switching for sale

Trench IGBT JIAENSEMI JNG30T65HS1 with 30A Diode Continuous Forward Current and High Speed Switching

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Product OverviewThe JNG30T65HS1 is a Trench IGBT from JIAEN Semiconductor, designed for lower losses and higher energy efficiency. It features high-speed switching and soft current turn-off waveforms, making it suitable for applications requiring higher system efficiency.Product AttributesBrand: JIAEN SemiconductorProduct Line: Trench IGBTsTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitsCollector-Emitter VoltageVCES650VGate-Emitter VoltageVGES

China Power semiconductor device JIAENSEMI JNG20T65KS trench IGBT with 650 volt collector emitter voltage for sale

Power semiconductor device JIAENSEMI JNG20T65KS trench IGBT with 650 volt collector emitter voltage

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Delivery Time: Negotiable

Product OverviewThe JNG20T65KS is a JIAEN Trench IGBT offering lower losses and higher energy efficiency. It is designed for applications such as motor control, general inverters, and other soft switching applications, featuring high-speed switching and soft current turn-off waveforms.Product AttributesBrand: JIAENOrigin: www.jiaensemi.comTechnical SpecificationsParameterValueUnitsConditionsCollector-Emitter Voltage (VCES)650VGate-Emitter Voltage (VGES)+30VContinuous

China Motor control IGBT JIAENSEMI JNG10T65DJS1 650V 10A designed for high speed switching applications for sale

Motor control IGBT JIAENSEMI JNG10T65DJS1 650V 10A designed for high speed switching applications

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JNG10T65DJS1 IGBTThe JNG10T65DJS1 is a 650V, 10A IGBT designed for high-speed switching applications. It offers high system efficiency, particularly beneficial for motor control, and features soft current turn-off waveforms. This IGBT is suitable for motor drives and home appliances.Product AttributesBrand: JIAEN Semiconductor Co., LtdModel: JNG10T65DJS1Package: TO-252-2LTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitsAbsolute Maximum RatingsVCES650VVGE

China IGBT module Infineon IGW30N65L5 650V 30A low VCEsat transistor suitable for solar inverter systems for sale

IGBT module Infineon IGW30N65L5 650V 30A low VCEsat transistor suitable for solar inverter systems

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Product OverviewThe IGW30N65L5 is a 650V IGBT from Infineon's TRENCHSTOP 5 technology, offering a low VCE(sat) for improved efficiency. This fifth-generation IGBT provides a best-in-class tradeoff between conduction and switching losses, featuring a maximum junction temperature of 175C. It is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant. Ideal for demanding applications such as uninterruptible power supplies, solar photovoltaic

China Low forward voltage reverse conducting diode integrated in Infineon IHW30N65R5 IGBT for power control for sale

Low forward voltage reverse conducting diode integrated in Infineon IHW30N65R5 IGBT for power control

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Product DescriptionThe IHW30N65R5 is a Reverse conducting IGBT from Infineon's Resonant Switching Series, featuring a powerful monolithic reverse-conducting diode with a low forward voltage. It utilizes TRENCHSTOPTM technology for tight parameter distribution, high ruggedness, stable temperature behavior, low VCEsat and Eoff, and easy parallel switching. This IGBT is designed for applications requiring low EMI and is qualified according to JESD-022. It is Pb-free and RoHS

China Infineon FS75R12W2T7 B11 EasyPACK module designed for high power density and operation in motor drives for sale

Infineon FS75R12W2T7 B11 EasyPACK module designed for high power density and operation in motor drives

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Product OverviewThe FS75R12W2T7_B11 EasyPACK module features TRENCHSTOP IGBT7 and Emitter Controlled 7 Diode with PressFIT technology and an integrated NTC thermistor. It offers low VCEsat, overload operation up to 175C, and a compact design with high power density. Suitable for auxiliary inverters, air conditioning, motor drives, servo drives, and UPS systems.Product AttributesBrand: InfineonTechnology: TRENCHSTOP IGBT7, Emitter Controlled 7 Diode, PressFITSubstrate Material

China Infineon IGW08T120 IGBT featuring Pb free lead plating and temperature stable behavior for power electronics for sale

Infineon IGW08T120 IGBT featuring Pb free lead plating and temperature stable behavior for power electronics

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Product OverviewThe IGW08T120 is a Low Loss IGBT from Infineon's TrenchStop Series, utilizing TrenchStop and Fieldstop technology for 1200V applications. It offers short circuit withstand time of 10s and is designed for frequency converters and uninterrupted power supplies. Key advantages include very tight parameter distribution, high ruggedness, temperature-stable behavior, easy parallel switching capability due to positive temperature coefficient in VCE(sat), low EMI, and

China EconoDUAL3 Infineon FF600R17ME4 IGBT Module Featuring Low VCEsat and Positive Temperature Coefficient for sale

EconoDUAL3 Infineon FF600R17ME4 IGBT Module Featuring Low VCEsat and Positive Temperature Coefficient

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Infineon EconoDUAL3 Module FF600R17ME4 The FF600R17ME4 is an EconoDUAL3 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled diode with NTC. It offers high current density, low VCEsat with a positive temperature coefficient, and high power density with an isolated base plate. This module is suitable for high power converters and wind turbines. Product Attributes Brand: Infineon Series: EconoDUAL3 Module Label Code: FF600R17ME4 Material of module baseplate: Cu

China Trench and Fieldstop IGBT Infineon IKW20N60T Power Semiconductor with Soft Fast Recovery EmCon HE Diode for sale

Trench and Fieldstop IGBT Infineon IKW20N60T Power Semiconductor with Soft Fast Recovery EmCon HE Diode

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Product OverviewThe TrenchStop Series IKP20N60T, IKB20N60T, and IKW20N60T are low-loss DuoPack power semiconductors featuring IGBTs in Trench and Fieldstop technology with a soft, fast recovery EmCon HE diode. These devices offer very low VCE(sat) of 1.5V (typ.), a maximum junction temperature of 175C, and a short circuit withstand time of 5s. They are designed for applications such as frequency converters and uninterrupted power supplies. The Trench and Fieldstop technology