Single IGBTs
High Current IGBT HXY MOSFET RJH1CV7DPQ-HXY Semiconductor Device With Avalanche Energy Capability
Product OverviewThe RJH1CV7DPQ is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is designed for applications requiring high reliability and efficiency, offering a positive temperature coefficient, fast switching speeds, low VCE(sat), and a rugged construction. The device is AEC-Q101
650V 50A IGBT Power Transistor HXY MOSFET APT45GR65B-HXY Suitable for UPS EV Charger Energy Storage
Product OverviewThe APT45GR65B is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Charger, and Energy Storage Inverter systems.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: APT45GR65BOrigin: Shenzhen HuaXuanYang
IGBT Module JIAENSEMI JNG50T120LIS2 Featuring High Speed Switching and Energy Saving Characteristics
Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and a square RBSOA.Product AttributesBrand: JIAENOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterConditionsValueUnitsCollector
power conversion component HXY MOSFET AFGHL50T65SQD-HXY 650V 50A IGBT for UPS EV chargers solar inverters
Product OverviewThe AFGHL50T65SQD is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring high reliability and efficient power conversion. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key applications include UPS, EV-chargers, and solar string inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: AFGHL50T65SQDOrigin:
power control HXY MOSFET IRGP4266-EPBF-HXY for EV charger UPS and solar string inverter applications
Product OverviewThe IRGP4266-EPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Charger, Solar String Inverter, and Energy Storage Inverter applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IRGP4266-EPBFPackage: TO
EasyPACK module with fast trench fieldstop 3 IGBT SiC diode and integrated NTC sensor Infineon DF80R12W2H3FB11
EasyPACK Module with fast Trench/Fieldstop High-Speed 3 IGBT and SiC diode and PressFIT / NTCThe EasyPACK module features a fast Trench/Fieldstop High-Speed 3 IGBT and a SiC Schottky diode, along with PressFIT technology and an integrated NTC temperature sensor. It is designed for applications such as solar power systems, offering advantages like low switching losses and a compact design. The module boasts a 3 kV AC 1min insulation rating and an Al2O3 substrate with low
insulated gate bipolar transistor HXY MOSFET AOK40B65HQ2 with low EMI and high temperature tolerance
Product OverviewThe AOK40B65HQ2 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It features easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-chargers, and solar string inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen
Insulated Gate Bipolar Transistor HXY MOSFET IXYH40N120C3-HXY with Low Saturation Voltage and EMI
Product OverviewThe IXYH40N120C3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Ideal for UPS, EV-chargers, and solar string inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IXYH40N120C3Origin: Shenzhen HuaXuanYang Electronics CO.,LTDPackage: TO-247Packing:
High collector current HXY MOSFET IGW100N60H3-HXY with low EMI and low saturation voltage features
Product OverviewThe IGW100N60H3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency applications. It features high input impedance, low saturation voltage, low switching losses, and robust transient reliability, making it suitable for demanding industrial uses. Its low EMI characteristics also contribute to its suitability in sensitive electronic systems.Product AttributesBrand: HUAXUANYANGManufacturer: HXY ELECTRONICS CO.,LTDOrigin: Shenzhen,
Power Semiconductor HXY MOSFET IRGP4790D-EPBF-HXY 650V 75A IGBT Module Suitable for UPS EV Chargers
Product OverviewThe IRGP4790D-EPBF is a 650V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IRGP4790D-EPBFOrigin:
Power transistor HXY MOSFET IGW50N60TP designed for UPS EV charger and solar string inverter systems
Product OverviewThe IGW50N60TP is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key features include a maximum junction temperature of 175C and suitability for UPS, EV-Charger, and Solar String Inverter applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IGW50N60TP
High current IGBT HXY MOSFET RGS80TS65HRC11-HXY with low gate charge and easy paralleling capability
Product OverviewThe RGS80TS65HRC11 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-chargers, and solar string inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: RGS80TS65HRC11Origin:
Infineon IKP08N65H5 650V IGBT Featuring RAPID 1 Diode and TRENCHSTOP 5 Technology for Power Switching
Product OverviewThe IKP08N65H5 is a high-speed 5th generation IGBT from Infineon's TRENCHSTOP 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It offers best-in-class efficiency in hard switching and resonant topologies, serving as a plug-and-play replacement for previous generation IGBTs. With a 650V breakdown voltage and a maximum junction temperature of 175C, it is qualified according to JEDEC for target applications and is RoHS compliant.Product
insulated gate bipolar transistor HXY MOSFET SPT40N120F1AT8TL HXY designed for UPS and inverter
Product OverviewThe SPT40N120F1AT8TL is an Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for UPS, EV-Charger, Solar String Inverter, and Energy Storage Inverter applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: SPT40N120F1AT8TLOrigin:
Power semiconductor HXY MOSFET FGH50T65SQD-F155-HXY 650V 50A IGBT with low gate charge and low EMI
FGH50T65SQD-F155 Insulated Gate Bipolar TransistorThe FGH50T65SQD-F155 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key features include a maximum junction temperature of 175C and suitability for UPS, EV-Charger, and Solar String Inverter applications.Product AttributesBrand:
1200V 75A IGBT Transistor HXY MOSFET APT70GR120B2-HXY with Low EMI and Enhanced Thermal Stability
Product OverviewThe APT70GR120B2 is a 1200V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features low gate charge, low saturation voltage (VCE(SAT)), and easy paralleling capability due to a positive temperature coefficient in VCESAT. Its low EMI and maximum junction temperature of 175C make it suitable for demanding industrial uses.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: APT70GR120B2Origin: Shenzhen
IGBT module Infineon IKW40N65F5 with 650V voltage and 74A current featuring RAPID 1 diode technology
Product OverviewThe IKW40N65F5 and IKP40N65F5 are high-speed 5 FAST IGBTs in TRENCHSTOPTM 5 technology, copacked with RAPID 1 fast and soft anti-parallel diodes. These 650V DuoPack devices offer best-in-class efficiency in hard switching and resonant topologies, low Qg, and a maximum junction temperature of 175C. They are qualified according to JEDEC for target applications and are Pb-free and RoHS compliant.Product AttributesBrand: InfineonTechnology: TRENCHSTOPTM 5Diode
soft commutation Infineon IHW25N120E1 IGBT with positive temperature coefficient and low EMI performance
Product DescriptionThe IHW25N120E1 is a Resonant Soft-Switching Series Reverse conducting IGBT featuring a powerful monolithic body diode with low forward voltage, specifically designed for soft commutation. Utilizing TRENCHSTOPTM technology, it offers very tight parameter distribution, high ruggedness, stable temperature behavior, low VCEsat, and easy parallel switching capability due to a positive temperature coefficient in VCEsat. This IGBT also provides low EMI and is
insulated gate bipolar transistor HXY MOSFET AOK60B65H2AL with advanced trench and field stop technology
Product OverviewThe AOK60B65H2AL is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring efficient power conversion and fast switching speeds.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen HuaXuanYang
AECQ101 Qualified TO247 Package HXY MOSFET SPT40N120T1B1T8TL HXY Ideal for PTC and OBC Applications
Product OverviewThe SPT40N120T1B1T8TL is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It features a positive temperature coefficient, fast switching speeds, low VCE(sat), and is reliable and rugged. The device is AEC-Q101 qualified, supports a 175 operating temperature, and is