Single IGBTs

Product OverviewThe FF150R17KE4 is a 62mm C-Series module featuring Trench/Fieldstop IGBT4 and Emitter Controlled Diode technology. Designed for high-power applications, it offers an extended operating temperature range, low VCEsat, and exceptional robustness. Its electrical and mechanical features make it suitable for demanding industrial uses.Product AttributesBrand: InfineonSeries: C-SeriesModel: FF150R17KE4Certifications: EN61140 (Basic insulation)Material (Baseplate):

Product OverviewThe IGW40N60H3 is a high-speed IGBT from Infineon's third-generation series, featuring TRENCHSTOP technology. This technology offers very low VCEsat, low EMI, and a very soft, fast recovery anti-parallel diode. Designed for demanding applications, it boasts a maximum junction temperature of 175C and is qualified according to JEDEC standards for target applications. This IGBT is Pb-free and RoHS compliant, with PSpice models available for simulation.Product

Product OverviewThe FF200R17KE4 is a 62mm C-Series IGBT module featuring a fast Trench/Fieldstop IGBT4 and an Emitter Controlled 4 diode. It offers extended operation temperature, low VCEsat with a positive temperature coefficient, and high robustness. This module is designed for high-power applications such as inverters, motor drives, UPS systems, and wind turbines.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifica

Product OverviewThe IGW50N65H5AXKSA1 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key features include a maximum junction temperature of 175C and suitability for UPS, EV-Charger, and Solar String Inverter applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.

Product OverviewThe IXYP15N65C3D1M is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low gate charge, and low saturation voltage. This device is suitable for applications such as UPS, EV-charging, three-phase solar string inverters, and energy storage systems. Manufactured by HUAXUANYANG HXY ELECTRONICS CO.,LTD.Product AttributesBrand:

Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as UPS, Induction converters, Uninterruptible power supplies, and other soft switching applications. The JNG40T65HJU1 features a 650V, 40A rating with a typical VCE(sat) of 1.7V at VGE=15V and IC=40A. Its high-speed switching capability and Trench and Field-Stop technology contribute to higher system efficiency and easy parallel switching.Product AttributesBrand:

Product OverviewThe JNG60T65HJU1 is a Trench IGBT from JIAEN Semiconductor, designed for high-speed switching applications. It offers lower losses and higher energy efficiency, making it suitable for UPS, induction converters, uninterruptible power supplies, and other soft switching applications. Key features include soft current turn-off waveforms and a square RBSOA.Product AttributesBrand: JIAENOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications:

Product OverviewThe IXYH55N120C4 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching speed, and increasing avalanche energy. It is designed for applications such as motor drives, PTC, and OBC.Product AttributesBrand: HUAXUANYANGOrigin: HXY ELECTRONICS CO.,LTDCertifications: Halogen Free and Green Devices Available (RoHS

Product OverviewThe IXXH60N65C4 is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is suitable for applications requiring fast switching and low saturation voltage.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IXXH60N65C4Package Type: TO-247Certifications: Halogen

Product OverviewThe JIAEN GN300HF120T1SZ1 is a 1200V, 300A Trench FS IGBT Half Bridge Module designed for general inverter and soft switching applications. It offers lower losses and higher energy efficiency, making it suitable for motor drives, AC and DC servo drive amplifiers, and power supplies. Key features include a low VCE(sat) of 1.6V (typ.), soft turn-off capability, a positive VCE(on) temperature coefficient, and ease of paralleling.Product AttributesBrand:

Product OverviewThe FZ600R12KE4 is a 62mm C-Series IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technology. It offers extended operation temperature, low switching losses, high robustness, and a positive temperature coefficient for VCEsat. This module is designed for high-power applications such as high-power converters, motor drives, UPS systems, and wind turbines.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not

Product OverviewThe IKA15N65F5 is a high-speed 5 FAST IGBT from Infineon's TRENCHSTOPTM 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. This DuoPack IGBT offers best-in-class efficiency in hard switching and resonant topologies, a 650V breakdown voltage, low QG, and a maximum junction temperature of 175C. It is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant. Ideal for applications such as solar converters,

Product OverviewThe IKP20N65F5 is a high-speed 5 FAST IGBT from Infineon's TRENCHSTOPTM 5 technology, copacked with a RAPID 1 fast and soft anti-parallel diode. This DuoPack IGBT offers best-in-class efficiency in hard switching and resonant topologies, a 650V breakdown voltage, and low Qg. It is designed for applications requiring high-speed switching and is qualified according to JEDEC standards. The product is Pb-free and RoHS compliant.Product AttributesBrand: InfineonTec

FF150R12RT4 IGBT-ModuleThe FF150R12RT4 is a 34mm module featuring a fast Trench/Fieldstop IGBT4 and an Emitter Controlled 4 diode. It is designed for high-frequency switching applications such as motor drives and UPS systems. Key advantages include an extended operation temperature (Tvj op = 150C), low switching losses, low VCEsat, and VCEsat with a positive temperature coefficient. The module has an isolated base plate and a standard housing.Product AttributesModule Label

Product OverviewThe IKZA75N120CH7 is a high-speed 1200 V TRENCHSTOP IGBT 7 Technology device, co-packed with a full-rated current, soft-commutating, ultra-fast recovery, and low Qrr emitter-controlled 7 Rapid diode. It is optimized for high efficiency in high-speed hard switching topologies and offers easy paralleling capability due to its positive temperature coefficient in VCEsat. This product is qualified for industrial applications.Product AttributesBrand: InfineonTechnol

Product OverviewThe FGH40T120SMD-F155 is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficient power handling.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: FGH40T120SMD-F155Technology: Trench and

Product OverviewThe IXYH40N65C3H1 is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for applications such as UPS, EV-Chargers, and Solar String Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin:

Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA.Product AttributesBrand: JIAENOrigin: www.jiaensemi.comTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitsAbsolute Maximum RatingsVCESCollector-Emitter Voltage1200VVGES

Product OverviewThe APT45GP120B2DQ2G is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Ideal for UPS, EV-chargers, and solar string inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: APT45GP120B2DQ2GPackage: TO-247POrigin: Shenzhen HuaXuanYang Electronics CO.

FF300R12ME4 IGBT ModuleThe FF300R12ME4 is an EconoDUAL3 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled HE diode with NTC. It offers low VCEsat and operates at Tvj op = 150C. Ideal for motor drives, servo drives, UPS systems, and wind turbines.Product AttributesBrand: EconoDUAL3Certifications: UL approved (E83335)Technical SpecificationsParameterValueUnitConditionsIGBT, Inverter - Maximum Rated ValuesCollector-emitter voltage1200VTvj = 25CContinuous DC