Single IGBTs
IGBT 650V 75A Power Transistor HXY MOSFET FGW75N65WE HXY Suitable for UPS EV Chargers and Solar Inverters
Product OverviewThe FGW75N65WE is a 650V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: FGW75N65WEOrigin: Shenzhen
High Voltage IGBT HXY MOSFET IRG7PH50K10D-EPBF-HXY for Solar Inverters and Energy Storage Solutions
Product OverviewThe IRG7PH50K10D-EPBF is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key applications include UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters. This device features a maximum junction temperature of 175C and is available in a TO-247 package.Product
insulated gate bipolar transistor Infineon IRGP4066DPBF with low switching losses and ultrafast diode
Product OverviewThe IRGP4066DPbF and IRGP4066D-EPbF are n-channel Insulated Gate Bipolar Transistors (IGBTs) featuring ultrafast soft recovery diodes. Designed with low VCE(ON) Trench IGBT Technology, these devices offer low switching losses and high efficiency across a wide range of applications. They are suitable for various switching frequencies and provide robust transient performance for enhanced reliability. The IGBTs also exhibit excellent current sharing capabilities
Power semiconductor device Infineon IKW50N65EH5 featuring TRENCHSTOP 5 technology and RAPID 1 diode
Product OverviewThe IKW50N65EH5 is a high-speed fifth-generation IGBT from Infineon, utilizing TRENCHSTOPTM 5 technology. It offers best-in-class efficiency in hard switching and resonant topologies and serves as a plug-and-play replacement for previous IGBT generations. This device features a 650V breakdown voltage, low gate charge, and is copacked with a full-rated RAPID 1 fast and soft antiparallel diode. It is qualified according to JEDEC for target applications and is Pb
High voltage HXY MOSFET AFGHL40T65SPD-HXY optimized for UPS EV Chargers and energy storage inverters
Product OverviewThe AFGHL40T65SPD is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for applications such as UPS, EV-Chargers, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin:
power component HXY MOSFET ITF48IF1200HR-HXY ideal for motor drives power factor correction and on board chargers
Product OverviewThe ITF48IF1200HR is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as Power Factor Correction (PFC), motor drives, and On-Board Chargers (OBC).Product AttributesBrand: HUAXUANYANGOrigin: Shenzhen HuaXuanYang Electronics CO.
switching HXY MOSFET IXYH50N65C3H1 HXY designed for high junction temperature and low EMI environments
Product OverviewThe IXYH50N65C3H1 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-Charger, and Solar String Inverter applications.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen
High current capacity HXY MOSFET IKY75N120CH3XKSA1-HXY insulated gate bipolar transistor in TO247P4L package
Product OverviewThe IKY75N120CH3XKSA1 is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It features high current capability, low saturation voltage, and low switching losses, making it suitable for applications requiring high efficiency and rugged transient reliability. This IGBT is copacked with a Fast Recovery Diode and is designed for use in UPS, EV-Charging, String Solar Inverters, and Energy Storage Inverters.Product AttributesBrand
EconoPIM2 power module featuring Infineon FP100R12N2T7BPSA2 with TRENCHSTOP IGBT7 and NTC temperature sensor
Product OverviewThe FP100R12N2T7 EconoPIM2 module integrates TRENCHSTOP IGBT7 and Emitter Controlled 7 diode technology. It offers electrical features such as a VCES of 1200 V, IC nom of 100 A / ICRM of 200 A, low VCEsat, and overload operation up to 175C. Mechanically, it features an Al2O3 substrate with low thermal resistance, a copper base plate, an integrated NTC temperature sensor, and solder contact technology. This module is qualified for industrial applications
Industrial Grade IGBT Module Infineon FF300R12KS4 62mm C Series with High Voltage and Current Ratings
Product DescriptionThe 62mm C-Series module features a fast IGBT2 for high-frequency switching applications. It is designed for inverter use and offers robust performance with excellent thermal characteristics.Product AttributesBrand: InfineonProduct Line: C-SeriesModel: FF300R12KS4Technical SpecificationsParameterIGBT, InverterDiode, InverterModuleCollector-emitter voltage (VCES)1200 VContinuous DC collector current (IC)300 A (TC=60C) / 370 A (TC=25C)Repetitive peak
Durable HXY MOSFET FGH75N60SFTU-HXY IGBT Featuring Positive Temperature Coefficient and Easy Paralleling for Energy Storage
Product OverviewThe FGH75N60SFTU is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for use in UPS, EV-Chargers, Solar String Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: FGH75N60SFTUOrigin: Shenzhen
Power IGBT HXY MOSFET IXXX200N65B4-HXY 650V 160A Low Saturation Voltage for Solar Inverters and UPS
Product OverviewThe IXXX200N65B4 is a 650V, 160A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low gate charge, and low saturation voltage. This RoHS and Halogen-free compliant device is suitable for use in UPS, EV-Chargers, String Solar Inverters, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen
IGBT 650V 50A power transistor HXY MOSFET RGTH00TS65GC13-HXY suitable for UPS EV charger and solar inverter
Product OverviewThe RGTH00TS65GC13 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This IGBT is suitable for use in UPS, EV-Chargers, and Solar String Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: RGTH00TS65GC13Origin: Shenzhen, ChinaTechnical
IGBT 650V 50A TO247 Package HXY MOSFET NGTB50N65FL2WG HXY Featuring Positive Temperature Coefficient
Product OverviewThe NGTB50N65FL2WG is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low Gate Charge, and low Saturation Voltage. The maximum junction temperature is 175C.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDModel: NGTB50N65FL2WGOrigin: Shenzhen, ChinaPackage: TO-247Packing: 30PCSTechnical SpecificationsSymb
Industrial grade HXY MOSFET IXYH120N65B3-HXY IGBT transistor suitable for UPS EV charging and welding
Product OverviewThe IXYH120N65B3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency applications. It features high input impedance, low saturation voltage, and low switching losses, contributing to its rugged transient reliability. This device is suitable for industrial applications such as UPS, EV-charging, string inverters, and welding.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen HuaXuanYang Electronics CO.,LTDModel:
IGBT transistor HXY MOSFET IKW40N120CH7XKSA1-HXY for motor drives and onboard charger applications
Product OverviewThe IKW40N120CH7XKSA1 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficiency, such as motor drives and onboard chargers (OBC).Product AttributesBrand: HUAXUANYANGOrigin: Shenzhen HuaXuanYang
Power Semiconductor HXY MOSFET IGW40N65F5-HXY with 650V Collector Emitter Voltage and 70A Collector Current
Product OverviewThe IGW40N65F5 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. With a maximum junction temperature of 175C, this device is suitable for UPS, EV-Chargers, and Energy Storage Inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDOrigin: Shenzhen HuaXuanYang
High voltage IGBT module HXY MOSFET RGS80TSX2HRC11-HXY with fast switching and low conduction losses
Product OverviewThe RGS80TSX2HRC11 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficiency, featuring a positive temperature coefficient, fast switching speeds, low VCE(sat), and a rugged construction. The
switching HXY MOSFET NGTB40N120FL2WG-HXY IGBT with gate threshold voltage between 4.3 and 6.3 volts
Product OverviewThe NGTB40N120FL2WG is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficient power management.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: NGTB40N120FL2WGTechnology: Advanced
power control HXY MOSFET IRGP4760-EPBF-HXY 650V 50A IGBT for renewable energy and automotive systems
Product OverviewThe IRGP4760-EPBF is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. Key applications include UPS, EV-chargers, and solar string inverters.Product AttributesBrand: HUAXUANYANG HXY ELECTRONICS CO.,LTDModel: IRGP4760-EPBFOrigin: Shenzhen, ChinaPackage: TO-247Packing: