Optical Coating Equipment

Dielectric Films Optical Coating Equipment Ar N2 O2 PVD Magnetron Sputtering Deposition Applications Applications Specific Purpose Material Type Semiconductor IC, LSI electrode, wiring film AI, Al-Si, Al-Si-Cu, Cu, Au, Pt, Pd, Ag VLSI memory electrode Mo, W, Ti Diffusion barrier film MoSix, Wsix, TaSix,, TiSx, W, Mo, W-Ti Adhesive film PZT(Pb-ZrO2-Ti) , Ti, W Display Transparent conductive film ITO(In2O; -SnO2) Electrode wiring film Mo, W, Cr, Ta, Ti, Al, AlTi, AITa

Self-developed high-end optical coating equipment with 1200mm*500mm(customized) Working principle Atomiclayer deposition (ALD) is a method by which a substance can be deposited on a substrate layer by layer in the form of a single atomic film. Specification parameter model ALD1200-500 Coating film system AL2O3,TiO2,ZnO and etc. Coating temperature range Normal temperature-500℃ Coating vacuum chamber dimensions Inner diameter 1200mm, height 500mm(customizable) Vacuum chamber

ALD Atomic Layer Deposition Applications Applications Specific Purpose ALD Material Type MEMS devices Etching barrier layer Al2O3 Protective layer Al2O3 Anti-bonding layer TiO2 Hydrophobic layer Al2O3 Bonding layer Al2O3 Wear-resistant layer Al2O3, TiO2 Anti-short circuit layer Al2O3 Charge dissipation layer ZnO: Al Electroluminescent display Luminous layer ZnS: Mn / Er Passivation layer Al2O3 Storage materials Ferroelectric materials HfO2 Paramagnetic materials Gd2O3, Er2O3,

Dielectric Films Optical Coating Equipment Ar N2 O2 PVD Magnetron Sputtering Deposition Applications Applications Specific Purpose Material Type Semiconductor IC, LSI electrode, wiring film AI, Al-Si, Al-Si-Cu, Cu, Au, Pt, Pd, Ag VLSI memory electrode Mo, W, Ti Diffusion barrier film MoSix, Wsix, TaSix,, TiSx, W, Mo, W-Ti Adhesive film PZT(Pb-ZrO2-Ti) , Ti, W Display Transparent conductive film ITO(In2O; -SnO2) Electrode wiring film Mo, W, Cr, Ta, Ti, Al, AlTi, AITa

PVD Magnetron Sputtering Deposition Applications Applications Specific Purpose Material Type Semiconductor IC, LSI electrode, wiring film AI, Al-Si, Al-Si-Cu, Cu, Au, Pt, Pd, Ag VLSI memory electrode Mo, W, Ti Diffusion barrier film MoSix, Wsix, TaSix,, TiSx, W, Mo, W-Ti Adhesive film PZT(Pb-ZrO2-Ti) , Ti, W Display Transparent conductive film ITO(In2O; -SnO2) Electrode wiring film Mo, W, Cr, Ta, Ti, Al, AlTi, AITa Electroluminescent film ZnS-Mn, ZnS-Tb, CaS-Eu, Y2O3, Ta2O5,

PVD Magnetron Sputtering Deposition Applications Applications Specific Purpose Material Type Semiconductor IC, LSI electrode, wiring film AI, Al-Si, Al-Si-Cu, Cu, Au, Pt, Pd, Ag VLSI memory electrode Mo, W, Ti Diffusion barrier film MoSix, Wsix, TaSix,, TiSx, W, Mo, W-Ti Adhesive film PZT(Pb-ZrO2-Ti) , Ti, W Display Transparent conductive film ITO(In2O; -SnO2) Electrode wiring film Mo, W, Cr, Ta, Ti, Al, AlTi, AITa Electroluminescent film ZnS-Mn, ZnS-Tb, CaS-Eu, Y2O3, Ta2O5,

ALD Atomic Layer Deposition Applications Applications Specific Purpose ALD Material Type MEMS devices Etching barrier layer Al2O3 Protective layer Al2O3 Anti-bonding layer TiO2 Hydrophobic layer Al2O3 Bonding layer Al2O3 Wear-resistant layer Al2O3, TiO2 Anti-short circuit layer Al2O3 Charge dissipation layer ZnO: Al Electroluminescent display Luminous layer ZnS: Mn / Er Passivation layer Al2O3 Storage materials Ferroelectric materials HfO2 Paramagnetic materials Gd2O3, Er2O3,

ALD Atomic Layer Deposition Applications Applications Specific Purpose ALD Material Type MEMS devices Etching barrier layer Al2O3 Protective layer Al2O3 Anti-bonding layer TiO2 Hydrophobic layer Al2O3 Bonding layer Al2O3 Wear-resistant layer Al2O3, TiO2 Anti-short circuit layer Al2O3 Charge dissipation layer ZnO: Al Electroluminescent display Luminous layer ZnS: Mn / Er Passivation layer Al2O3 Storage materials Ferroelectric materials HfO2 Paramagnetic materials Gd2O3, Er2O3,

ALD Atomic Layer Deposition Applications Applications Specific Purpose ALD Material Type MEMS devices Etching barrier layer Al2O3 Protective layer Al2O3 Anti-bonding layer TiO2 Hydrophobic layer Al2O3 Bonding layer Al2O3 Wear-resistant layer Al2O3, TiO2 Anti-short circuit layer Al2O3 Charge dissipation layer ZnO: Al Electroluminescent display Luminous layer ZnS: Mn / Er Passivation layer Al2O3 Storage materials Ferroelectric materials HfO2 Paramagnetic materials Gd2O3, Er2O3,