Single FETs, MOSFETs

Product OverviewThe PJM06C60PA is a complementary N-Channel and P-Channel Power MOSFET designed for high power and current handling capabilities. It features an advanced trench technology for low on-resistance and fast switching speeds, making it suitable for various electronic applications. This lead-free product is available in a surface mount SOP-8 package.Product AttributesBrand: PingJingSemiModel: PJM06C60PAMaterial: Lead Free ProductPackage: SOP-8Technical Specification

Product OverviewThe PJA3400-AU is a 30V N-Channel Enhancement Mode MOSFET designed for switch load and PWM applications. It features advanced trench process technology, AEC-Q101 qualification, and compliance with EU RoHS 2.0 and IEC 61249 standards. This MOSFET offers low on-state resistance at various gate-source voltages, making it suitable for efficient power management.Product AttributesBrand: Panjit International Inc.Package: SOT-23Certifications: AEC-Q101 qualified,

Product OverviewThe PPJA3441 is a 40V P-Channel Enhancement Mode MOSFET designed for switch load and PWM applications. It features advanced trench process technology, low RDS(ON) values, and is compliant with EU RoHS 2011/65/EU and IEC61249 (Halogen Free) standards. The SOT-23 package is suitable for various electronic applications.Product AttributesBrand: Panjit International Inc.Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)Material: Green molding

Product OverviewThe PJM3400NSA is an N-Channel Enhancement Mode Field Effect Transistor designed for load switching and PWM applications, offering high power and current handling capability. It features a VDS of 30V and a continuous ID of 5.8A, with low RDS(ON) values at various VGS levels.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolConditionMinTypMaxU

Product OverviewThe PJM3401PSA is a P-Enhancement Field Effect Transistor designed for power switching applications. It features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and an excellent package for good heat dissipation. This transistor is suitable for hard-switched and high-frequency circuits, as well as uninterruptible power supply systems.Product AttributesBrand: PingJingSemiPackage: SOT-23Technical Specification

Product OverviewThe PJM2307PSA is a P-Channel Enhancement Mode Power MOSFET designed for various power management applications. It features low gate charge and RDS(on), low reverse transfer capacitances, and is suitable for PWM applications and load switching. Its robust design ensures efficient power management and reliable performance.Product AttributesBrand: PingJingSemiPackage: SOT-23Marking Code: R7Technical SpecificationsParameterSymbolTest ConditionMin.Typ.Max

Product OverviewThe PJM30DN30DL is a Dual N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for applications such as load switching, battery protection, and uninterruptible power supplies. This RoHS compliant, halogen and antimony free component is 100% avalanche tested and offers low on-resistance characteristics.Product AttributesBrand: PJMCertifications: RoHS Compliant, Halogen and Antimony FreeMoisture Sensitivity Level:

Product OverviewThe PJM10N60SQ is an N-Channel Enhancement Mode Power MOSFET designed for high-density cell design, offering ultra-low RDS(on) and excellent heat dissipation. It features a fully characterized avalanche voltage and current, making it suitable for power switching applications and Uninterruptible Power Supply (UPS) systems. With a VDS of 60V and ID of 10A, it boasts an RDS(on) of less than 30m at VGS=10V.Product AttributesBrand: PingjingsemiProduct Code:

Product OverviewThe PJM40P40TE is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for load switch, PWM applications, and power management, offering high performance with low on-resistance and robust avalanche testing. This RoHS compliant and halogen-free component ensures reliability and environmental consciousness.Product AttributesBrand: PJMCertifications: RoHS Compliant, Halogen and Antimony FreeMoisture Sensitivity Level:

Product OverviewThe PPJA138K is a 50V N-Channel Enhancement Mode MOSFET with ESD protection. It features advanced trench process technology and is specifically designed for battery-operated systems and solid-state relay drivers for applications such as displays and memories. This MOSFET offers low on-state resistance at various gate-source voltages and drain currents, and is ESD protected up to 2KV HBM. It is lead-free in compliance with EU RoHS2.0 and uses a green molding

Product Overview The SI2307 is a P-Channel Enhancement Mode Power MOSFET in a SOT-23 Small Outline Plastic Package. It features a high density cell design for ultra-low on-resistance and is manufactured using advanced trench process technology. This MOSFET is halogen-free and RoHS compliant, making it suitable for various electronic applications requiring efficient power management. Product Attributes Brand: (Parker Microelectronics) Origin: Shenzhen, China Package Type: SOT

OSH65R065 650V Super-Junction Power MOSFET The OSH65R065 is a 650V super-junction Power MOSFET designed for high-efficiency applications. It features very low FOM RDS(on), 100% avalanche tested, RoHS compliance, and improved dv/dt capability for high ruggedness. This MOSFET is ideal for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts. Product Attributes Brand: OSEN Model: OSH65R065 Certifications: RoHS compliant

Product OverviewThe IRF730 is a 450V N-CHANNEL MOSFET designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, low-level drive capability, and tested avalanche energy. This MOSFET is ideal for applications such as high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENPublication Order Number: IRF730Revision: Rev 21.2.10Package Type: TO-220ABTechnical

Product OverviewThis is a dual-channel secondary protection device for lithium batteries, utilizing trench technology and combining it with package heat dissipation technology. It achieves extremely low source-drain on-resistance at a gate-source voltage of $\pm$4.5V, effectively solving the charging and discharging issues of mobile phone fast-charging batteries.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertification

Product OverviewThe PJM05N60SQ is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It offers low on-resistance and is designed for power switching applications, including Uninterruptible Power Supplies (UPS). This component is RoHS and Reach Compliant, and is Halogen and Antimony Free, with a Moisture Sensitivity Level 1.Product AttributesBrand: PingJingSemiCertifications: RoHS and Reach Compliant, Halogen and Antimony FreeMoisture Sensitivity

PJM123NSA N- Enhancement Mode Field Effect TransistorThe PJM123NSA is an N-channel enhancement mode field-effect transistor designed for switching applications and small servo motor controls. It features a surface mount package, low RDS(ON), and ESD protection up to 2KV (HBM).Product AttributesBrand: PingJingPackage: SOT-23Marking: B123Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitAbsolute Maximum RatingsDrain-Source VoltageVDSTC=25, unless otherwise

Product OverviewThe PJM01N20KDC is an N-Channel Enhancement Mode Power MOSFET from Pingjingsemi. It features low gate charge and RDS(ON), ESD protection up to 2KV, and is designed for applications such as load switches and PWM applications, as well as general power management. With a VDS of 20V and ID of 0.8A, it offers RDS(on) < 310m @VGS=4.5V.Product AttributesBrand: PingjingsemiModel: PJM01N20KDCPackage: DFN1x0.6-3LMarking Code: JNCertifications: ESD protected (HBM) up to

Product OverviewThe AO3401-L is a high-performance N-channel enhancement mode MOSFET designed for efficient switching applications. It features fast switching speeds, low on-resistance, and suitability for low gate drive voltages, making it ideal for notebook power management, battery protection, and handheld instruments.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Green Device AvailableTechnical

Product OverviewThe PJM09N40PA is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management applications. Featuring advanced trench technology, it offers low on-resistance and robust performance with 100% avalanche testing. This RoHS and Reach compliant component is suitable for load switching and PWM applications.Product AttributesBrand: PingJingSemiCertifications: RoHS and Reach Compliant, Halogen and Antimony FreeMaterial: N-Channel Enhancement

Product OverviewThe PJT7828 is a 30V N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and ESD protection. It is specially designed for applications such as relay drivers and speed line drives. This product complies with EU RoHS 2011/65/EU directive and uses a green molding compound as per IEC61249 Std. (Halogen Free).Product AttributesBrand: Panjit International Inc.Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)Technical