Single FETs, MOSFETs

Product OverviewThe PJM10H06NSQ is an N-Channel Enhancement Mode Power MOSFET featuring excellent RDS(on) and low gate charge. It is designed for power switching applications, including Uninterruptible Power Supplies. With a VDS of 100V and ID of 6A, it offers RDS(on) < 140m @VGS=10V.Product AttributesBrand: PingJingSemiPackage: SOT-89Technical SpecificationsParameterSymbolTest ConditionMin.Typ.Max.UnitAbsolute Maximum RatingsDrain-Source VoltageVDS100VGate-Source VoltageVGS

TP65H070G4PS 650V SuperGaN GaN FETThe TP65H070G4PS is a 650V, 72m Gallium Nitride (GaN) FET, designed as a normally-off device. It integrates advanced high-voltage GaN HEMT and low-voltage silicon MOSFET technologies for superior reliability and performance. Leveraging the Gen IV SuperGaN platform, it offers improved efficiency through lower gate charge, output capacitance, crossover loss, and reverse recovery charge, leading to increased power density, reduced system size

Product OverviewThe PJM3407PSC is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for load switch and PWM applications, offering RoHS and Reach compliance, and is halogen and antimony free.Product AttributesBrand: Pingjing SemiconductorCertifications: RoHS and Reach Compliant, Halogen and Antimony FreeMoisture Sensitivity Level: 3Technical SpecificationsParameterSymbolTest ConditionMin.Typ.Max.UnitAbsolute Maximum RatingsDrain

Product OverviewThe OSPF13N45 is a 450V N-Channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive capability, and improved dv/dt capability for enhanced ruggedness. This MOSFET is ideal for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENOrigin: China (implied by .cn domain)Model: OSPF13N45Package: TO-220FTechnica

Product Overview The UJ4C075023K4S is a 750V, 23mW G4 SiC FET designed for high-performance power applications. It features a unique cascode circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off device. This design offers standard gate-drive characteristics, allowing it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. The UJ4C075023K4S is available in a TO-247-4L package, providing

PJMG10H13PSQ P-Channel Enhancement Mode Power MOSFETThe PJMG10H13PSQ is a P-Channel Enhancement Mode Power MOSFET designed for power switching applications. It features advanced Split Gate Trench Technology, offering advantages such as RoHS and Reach compliance, and being Halogen and Antimony Free. This MOSFET is suitable for use in Uninterruptible Power Supply systems.Product AttributesBrand: PingJingSemiCertifications: RoHS, Reach CompliantMaterial: Halogen and Antimony

Product OverviewThe PJMG10H08NTE is an N-Channel Enhancement Mode Power MOSFET featuring advanced Split Gate Trench Technology. It is designed for load switching, PWM applications, and power management, offering high performance with a VDS of 100V and ID of 8A. This MOSFET is 100% avalanche tested and RoHS compliant, making it a reliable choice for various electronic designs.Product AttributesBrand: Pingjing Semiconductor (implied by URL)Certifications: RoHS Compliant,

Product OverviewThe PJM2304NSA is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features fast switching, low gate charge, and low RDS(on), making it suitable for applications requiring high power and current handling capabilities. Key applications include battery protection, load switching, and general power management.Product AttributesBrand: PingJingSemiModel: PJM2304NSAPackage Type: SOT-23Revision: 3.0Date: Nov-2022Technical

Product OverviewThe PJM05C20DFA is a complementary N-Channel and P-Channel Power MOSFET designed for switching applications and DC/DC converters. It features very fast switching speeds and utilizes Trench MOSFET technology. The device offers high performance with low on-resistance characteristics for both N-channel (VDS=20V, ID=5A) and P-channel (VDS=-20V, ID=-5A) configurations.Product AttributesBrand: PingjingsemiProduct Code: PJM05C20DFAPackage: DFN2x2A-6LRevision: 1.0Date

Product OverviewThe PPJA138K-AU is a 50V N-Channel Enhancement Mode MOSFET featuring ESD protection. It utilizes advanced Trench Process Technology and is specifically designed for battery-operated systems and solid-state relays, including drivers for relays, displays, and memories. This AEC-Q101 qualified component offers low on-state resistance at various gate-source voltages and drain currents, making it suitable for efficient power management applications. It is also ESD

Product OverviewThe PJM04P20SG is a P-Channel Enhancement Mode Power MOSFET featuring advanced Trench Technology. It is designed for applications such as load switching, PWM, and power management. This RoHS and Reach compliant, halogen and antimony-free component offers excellent performance with low on-resistance and high current capabilities.Product AttributesBrand: PingJingSemiCertifications: RoHS and Reach Compliant, Halogen and Antimony FreeMoisture Sensitivity Level:

Product OverviewThe 60V P-Channel Enhancement Mode MOSFET (SOT-23 package) offers advanced trench process technology for efficient relay driver and speed line drive applications. It features low RDS(ON) at various gate-source voltages and drain currents, and is designed with lead-free compliance to EU RoHS 2011/65/EU and a green molding compound per IEC61249 Std. (Halogen Free).Product AttributesBrand: Panjit International Inc.Package Type: SOT-23Certifications: EU RoHS 2011

Product OverviewThe PJM02N60SA is an N-channel enhancement mode field-effect transistor designed for high power and current handling capabilities. It features low on-resistance (RDS(ON)) and is suitable for DC/DC converters and battery switch applications.Product AttributesBrand: PingJingSemiPackage: SOT-23Revision: 2.0Date: May-2020Technical SpecificationsParameterSymbolTest ConditionMinTypeMaxUnitAbsolute Maximum RatingsDrain-Source VoltageVDS60VGate-Source VoltageVGS

Product OverviewThe PJMT23DFA is an N-Channel Enhancement Mode MOSFET with an integrated PNP Transistor, designed for surface mount applications. It features ESD protection up to 2KV (HBM) and is available in a compact DFN2x2A-6L package. This device is suitable for Li-Battery charging and other power management applications in portable devices.Product AttributesBrand: PingJingSemiPackage Type: DFN2x2A-6LMarking Code: 720Certifications: ESD Protected (HBM) up to 2KVTechnical

Product OverviewThe PJM7002KNSI is an N-Channel Enhancement Mode Power MOSFET designed for high-density cell applications. It offers low RDS(on), voltage-controlled small signal switching, and high saturation current capability. This ESD protected device (HBM up to 2.5KV) is suitable for DC/DC converters and load switches in portable devices.Product AttributesBrand: PingJingSemiModel: PJM7002KNSIChannel Type: N-ChannelMode: Enhancement ModePackage: SOT-323ESD Protection: HBM

Product OverviewThe PJM20H05NTE is an N-Channel Enhancement Mode Power MOSFET designed for efficient power switching. It features fast switching speeds, low gate charge, and low reverse transfer capacitances, making it suitable for applications requiring high performance and reliability. Key specifications include a VDS of 200V and an ID of 5A, with an RDS(on) of less than 3 at VGS=4.5V. This MOSFET is ideal for use in LED lighting, chargers, and standby power supplies

Product OverviewThe PJM3422NSC is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is RoHS and Reach compliant, and halogen and antimony free. This MOSFET is designed for load switch and power management applications, offering a VDS of 55V and a continuous ID of 2.1A with low RDS(on) characteristics.Product AttributesBrand: Pingjing SemiconductorCertifications: RoHS and Reach Compliant, Halogen and Antimony FreeMoisture Sensitivity Level:

Product OverviewThe 60V P-Channel Enhancement Mode MOSFET, PJA3463, is designed for efficient load switching and PWM applications. It features advanced trench process technology, offering low on-resistance at various current and voltage levels. This RoHS 2.0 compliant and green molding compound product is suitable for applications requiring reliable switching performance.Product AttributesBrand: Panjit International Inc.Certifications: EU RoHS 2.0, IEC 61249 (Green molding

OSD90N03T LOW Voltage Trench Nch MOSFETThe OSD90N03T is a Low Voltage Trench N-Channel MOSFET designed for high-performance applications. It features fast switching speeds, low gate charge, and high power and current handling capabilities. This RoHS compliant component is ideal for DC to DC converters and synchronous rectification applications.Product AttributesBrand: OSENCertifications: RoHS compliantTechnical SpecificationsParametersUnitConditionsMinTypMaxAbsolute Maximum

Product OverviewThe PJM06C60PA is a complementary N-Channel and P-Channel Power MOSFET designed for high power and current handling capabilities. It features an advanced trench technology for low on-resistance and fast switching speeds, making it suitable for various electronic applications. This lead-free product is available in a surface mount SOP-8 package.Product AttributesBrand: PingJingSemiModel: PJM06C60PAMaterial: Lead Free ProductPackage: SOP-8Technical Specification