Single FETs, MOSFETs

Product OverviewThe PV537BA is a P-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers a robust performance with key features like low on-resistance and high current handling capabilities, making it suitable for power switching and control circuits. This device is Halogen-free & Lead-Free, adhering to environmental standards.Product AttributesBrand: NIKO-SEMModel: PV537BAPackage: SOP-8Certifications: Halogen

Product OverviewThe OSM2N150 is a 1500V N-channel MOSFET device with a maximum on-resistance of 13 at 10V gate-source voltage and a continuous current of 2A. It features low gate charge, low gate voltage, and high current conduction capability, making it suitable for applications such as load switching and PWM control. The OSM2N150 is available in TO-263 and TO-220-FB packages.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not

Product Overview The Oriental Semiconductor OSG55R160FZF is an N-Channel Power MOSFET from the GreenMOS Z series, engineered with charge balance technology for exceptional low on-resistance and reduced gate charge. This MOSFET is designed to minimize conduction losses, deliver superior switching performance, and offer robust avalanche capability. Integrated with a fast recovery diode (FRD), it minimizes reverse recovery time, making it ideal for resonant switching topologies.

Product OverviewThe SI2304 is a N-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low on-resistance. It features an advanced trench process technology and comes in a standard SOT-23 small outline plastic package. This MOSFET is halogen-free and RoHS compliant, making it suitable for various electronic applications.Product AttributesBrand: Pakermicro ()Origin: Shenzhen, ChinaPackage Type: SOT-23 Small Outline Plastic PackageCer

Product Overview The Qorvo QPD2080D is a discrete 800-micron pHEMT operating from DC to 20 GHz. Fabricated using Qorvos standard 0.25 um power pHEMT production process, it incorporates advanced techniques to optimize microwave power and efficiency at high drain bias conditions. This device typically delivers 29.5 dBm of output power at P1dB with 11.5 dB gain and 56% power-added efficiency at 1 dB compression, making it suitable for high-efficiency applications. The QPD2080D

Product Overview The OSEN OSD60N02T is a Low Voltage N-channel MOSFET designed for high-performance applications. It features fast switching speeds, low gate charge, and high power and current handling capabilities. This RoHS compliant component is ideal for DC to DC converters and synchronous rectification applications. Product Attributes Brand: OSEN Product Order Number: OSD60N02T Revision: 21.2.10 Certifications: RoHS compliant Technical Specifications Symbol Parameters

Product OverviewThe OSD12N50 is a 500V N-CHANNEL MOSFET from OSEN, designed for high efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt performance with high ruggedness. This MOSFET is ideal for use in high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENPublication Order Number: OSD12N50Revision: 21.2.10Technical Specificatio

Product OverviewThe PJM65N40DN is an N-Channel Enhancement Mode Power MOSFET designed for high-performance applications. It features excellent RDS(ON) and low gate charge, making it suitable for battery protection, load switching, and uninterruptible power supplies. With a VDS of 40V and ID of 65A, it offers low on-resistance at various gate-source voltages (RDS(on)< 9m @VGS= 10V, RDS(on)< 12m @VGS= 4.5V).Product AttributesBrand: PJM (PingJingSemi)Origin: China (implied by

Product Overview The Oriental Semiconductor OSG55R140HF is a high-voltage N-Channel Power MOSFET from the GreenMOS Generic series, engineered with charge balance technology. It offers outstanding low on-resistance and reduced gate charge, minimizing conduction and switching losses for superior performance. This MOSFET is optimized for high power density applications requiring the highest efficiency standards, making it suitable for PC power, LED lighting, telecom power,

Product Overview Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsModelGateDrainSourceAbsolute Maximum RatingsThermal Resistance (Junction-to-Ambient)Thermal Resistance (Junction-to-Board)4N90SJ XXXXX123Parameters guaranteed by design, measurement correction. Note: Exceeding the above absolute maximum ratings may cause permanent damage to the device. This is only a rating

Product Overview The SFG100N08PF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, built on their unique SFGMOS device design. This series is optimized for high systems with gate driving voltages exceeding 10V, offering low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. It is ideal for applications such as switched-mode power supplies, motor drivers, battery protection, DC-DC converters, solar inverters, and UPS

Product OverviewThe PJM12P20DF is a P-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features low gate charge and low on-resistance (RDS(ON)), making it suitable for applications requiring high performance and reduced power loss. Its robust design and specific electrical characteristics make it ideal for load switching and PWM applications.Product AttributesBrand: PingJingSemiPart Number: PJM12P20DFPackage Type: DFN2x2-6LMarking Code:

Product OverviewThe PJM08P40PA is a P-Channel Enhancement Mode Power MOSFET designed for load switching, PWM applications, and power management. It features advanced trench technology, 100% avalanche testing, and is RoHS and Reach compliant, as well as halogen and antimony free. This MOSFET offers a VDS of -40V and ID of -8A, with low on-resistance values.Product AttributesBrand: PingJingSemiCertifications: RoHS and Reach Compliant, Halogen and Antimony FreeMoisture

Product Overview The SFS06R025GF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, engineered with advanced device design to deliver low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically optimized for synchronous rectification power systems requiring low driving voltage, offering low Vth. It is suitable for applications such as PD chargers, motor drivers, switching voltage regulators, DC-DC

Product OverviewThe PPJA3405 is a 30V P-Channel Enhancement Mode MOSFET designed for switch load and PWM applications. It features advanced trench process technology, offering low RDS(ON) values. This product is lead-free and compliant with EU RoHS 2011/65/EU directive, utilizing a green molding compound as per IEC61249 Std. (Halogen Free).Product AttributesBrand: Panjit International Inc.Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)Package: SOT-23Marking:

20V P-Channel Enhancement Mode MOSFET This P-Channel Enhancement Mode MOSFET is designed for switch load and PWM applications. It features advanced trench process technology and offers low RDS(ON) at various gate-source voltages. The device is lead-free and compliant with EU RoHS 2011/65/EU directive, utilizing a green molding compound as per IEC61249 Std. (Halogen Free). Product Attributes Brand: Panjit International Inc. Package: SOT-23 Certifications: EU RoHS 2011/65/EU,

Product Overview The NTH065N06C is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. It features low RDS(ON) for high efficiency and low gate charge for high-speed switching. With high EAS for reliability, this MOSFET is 100% UIS and RG tested. Typical applications include DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, printed circuit board

Product OverviewThe PK537BA is a P-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various applications. It features a PDFN 5x6P package and is Halogen-Free & Lead-Free.Product AttributesBrand: NIKO-SEMPackage Type: PDFN 5x6PCertifications: Halogen-Free & Lead-FreeTechnical SpecificationsParametersSymbolLimitsUnitsTest ConditionsDrain-Source Breakdown VoltageV(BR)DSS-30VVGS = 0V, ID = -250AGate Threshold VoltageVGS(th)-1.6VVDS = VGS, ID = -250AGate

Product OverviewThe SI2323 is a P-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low on-resistance. It features an advanced trench process technology and is housed in a SOT-23 small outline plastic package. This MOSFET is halogen-free and RoHS compliant.Product AttributesBrand: (Pakermicro)Origin: (Shenzhen)Certifications: Halogen free and RoHS compliantPackage Type: SOT-23 Small Outline Plastic PackageMaterial: EpoxyFlammabi

Product OverviewThe AO3415 is a P-Channel Enhancement Mode Power MOSFET utilizing an advanced trench process for ultra-low on-resistance. It comes in a SOT-23 small outline plastic package, offering high density cell design and industry-standard packaging. This MOSFET is halogen-free and RoHS compliant, making it suitable for battery protection, load switching, and power management applications.Product AttributesBrand: (Pakermicro)Origin: (Shenzhen)Certifications: UL: 94V-0,