Single FETs, MOSFETs

Product Overview The NPS1N60S is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and reliability, it features low RDS(ON) for reduced power loss, low gate charge for high-speed switching, and high EAS for robust performance. This MOSFET is ideal for applications such as AC/DC converters, adapters, chargers, LED drivers, high-frequency circuits, and switching power supplies. Product

Product OverviewThe OSP18N20 is a 200V N-Channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive capability, and improved dv/dt capability for enhanced ruggedness. Tested for avalanche energy, this MOSFET is suitable for high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENOrigin: ChinaProduct Order Number: OSP18N20Revision:

Product Overview The NVT100N10C from Guangdong Niuhang Specification Electronic Technology Co., Ltd. is an N-Channel Enhancement Mode Trench Power MOSFET designed for high-efficiency and high-speed switching applications. It features low RDS(ON) for reduced power loss, low gate charge for faster switching, and high EAS for enhanced reliability. This MOSFET is 100% UIS and RG tested, making it suitable for demanding applications such as DC/DC converters, synchronous rectificat

NPS20N65F 650V N-channel Enhancement MOSFET Product Overview The NPS20N65F is a 650V N-channel Enhancement MOSFET from Niu Hang, designed for high-efficiency power applications. It features low RDS(ON), ultra-low gate charge, and is 100% UIS and RG tested. This MOSFET is suitable for use in adapters, PCs, PDs, chargers, switched-mode power supplies (SMPS), and uninterruptible power supplies (UPS). Its robust design and performance characteristics make it a reliable choice for

Product OverviewThe OSPF11N50 is a 500V N-CHANNEL MOSFET designed for high-efficiency applications. It features fast switching speed, high input impedance, low-level drive capability, and improved dv/dt capability with high ruggedness. Tested for avalanche energy, this MOSFET is suitable for high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENOrigin: China (implied by .cn domain and Chinese text)Model

Product Overview The OSG60R180FF is a high-voltage N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS Generic series, engineered with charge balance technology for exceptional low on-resistance and reduced gate charge. This enhancement-mode MOSFET is optimized for extreme switching performance, minimizing conduction and switching losses, making it ideal for high power density applications demanding the highest efficiency standards. Its robust design offers superior

Product OverviewThe EMH2412 is an N-Channel Power MOSFET designed for 24V, 6A applications. It features low ON-resistance and is ideally suited for LiB charging and discharging switches. This common-drain type MOSFET supports 2.5V drive and includes a protection diode.Product AttributesBrand: onsemiCertifications: Halogen free complianceTechnical SpecificationsParameterSymbolConditionsRatingsUnitAbsolute Maximum RatingsDrain-to-Source VoltageVDSS24VGate-to-Source VoltageVGSS

Product OverviewThe PJM30C30DL is a complementary N-Channel and P-Channel Power MOSFET designed for power management applications. It features advanced trench technology, 100% avalanche tested, and is RoHS compliant, halogen and antimony free. Ideal for use in brushless motors and portable equipment, this MOSFET offers efficient power control with low on-resistance characteristics.Product AttributesBrand: PJMCertifications: RoHS Compliant, Halogen and Antimony FreeMoisture

Product OverviewThis is a dual-channel product designed for secondary protection of lithium batteries, utilizing advanced technology. It achieves extremely low source-to-source on-resistance at a specific gate-source voltage, effectively addressing charging and discharging issues in fast-charging mobile phone batteries. The source-to-source turn-off voltage offers a maximum typical withstand voltage of , enhancing the reliability of battery protection systems. It features a

Product Overview The SFS06R03GF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, built on their unique device design for low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically designed for synchronous rectification power systems requiring low driving voltage. It is ideal for applications such as PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode

Product Overview The OSG65R380DEF is a high-voltage N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS E series. It utilizes charge balance technology to achieve superior low on-resistance and reduced gate charge, minimizing conduction losses and enhancing switching performance. This MOSFET is engineered for a balance between EMI and efficiency, enabling power supply systems to reach high efficiency levels while meeting EMI standards. It is ideal for applications

Product OverviewThe YHJ-65P150AMC is a normally-off GaN High Electron Mobility Transistor (HEMT) device utilizing a cascode configuration. It offers high breakdown voltage, high current handling, and high operating speed, making it suitable for high-power applications. Key features include gate drive voltage compatibility (-20V to +20V), high operating frequency, and low Qrr. This device is ideal for Switch Mode Power Supplies (SMPS), AC-DC/DC-DC Converters, and Motor Drives

Product OverviewThe PA410BD is an N-Channel Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers robust performance with high voltage and current handling capabilities, making it suitable for power switching and amplification circuits.Product AttributesBrand: NIKO-SEMPackage: TO-252Certifications: Halogen-Free & Lead-FreeTechnical SpecificationsParameterSymbolTest ConditionsLimitUnitABSOLUTE MAXIMUM RATINGSDrain-Source VoltageVDS100

Product OverviewThe PZ2N7002M is an N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various electronic applications. It features Halogen-Free & Lead-Free compliance and ESD protection.Product AttributesBrand: NIKO-SEMPackage Type: SOT-23(S)Certifications: Halogen-Free & Lead-FreeESD Protection: Yes, 2KV HBMTechnical SpecificationsParameterSymbolTest ConditionsLimitUnitABSOLUTE MAXIMUM RATINGSDrain-Source VoltageVDS60VGate-Source VoltageVGS

Product Overview The NPS2N60S is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and reliability, this MOSFET features low RDS(ON) for reduced power loss, low gate charge for high-speed switching, and high EAS for enhanced robustness. It is suitable for various applications including AC/DC converters, adaptors, chargers, LED drives, high-frequency circuits, and switching power

Product OverviewThe PK501BA is a P-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various protection and switching applications. It features low RDS(on) for minimal conduction losses, an optimized gate charge for reduced switching losses, and ESD protection up to 2KV. This device is PbFree, Halogen Free, and RoHS compliant, making it suitable for environmentally conscious designs.Product AttributesBrand: NIKO-SEMModel: PK501BAPackage: PDFN

Product Overview The BSS138K is an N-Channel Enhancement Mode Power MOSFET designed for various applications including LED lighting, ON/OFF switching, and networking. It features low RDS(on) at VGS=10V and 3.3V logic level control, housed in a SOT23 package. This Pb-Free, RoHS Compliant component offers efficient performance with its high breakdown voltage and continuous drain current capabilities. Product Attributes Brand: (Parker Microelectronics) Origin: Shenzhen, China

Product OverviewThe PE616BA is a N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It offers high performance with features like low on-resistance and fast switching characteristics. This transistor is Halogen-Free & Lead-Free, making it suitable for environmentally conscious designs.Product AttributesBrand: NIKO-SEMProduct Code: PE616BAPackage Type: PDFN 3x3PCertifications: Halogen-Free & Lead-FreeTechnical SpecificationsParameterSymbolTes

Product OverviewThe IRFP260NPBF is a 200V N-CHANNEL MOSFET from OSEN, designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, low level drive, and tested avalanche energy. This MOSFET is ideal for applications such as high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not

Product Overview The SFS06R06PF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, designed with unique device technology to deliver low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically optimized for synchronous rectification power systems requiring low driving voltage. Key applications include PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode