Single IGBTs

Product OverviewThe FGB40T65SPD-F085 is a 650 V, 40 A IGBT utilizing novel field stop 3rd generation technology. It offers optimized performance with low conduction and switching losses for high efficiency, along with enhanced blocking voltage and rugged high current switching reliability. This device is also advantageous for parallel operation. It is copacked with a soft, fast recovery diode and is AEC-Q101 qualified.Product AttributesBrand: onsemiOrigin: Semiconductor

Product OverviewThe FGHL60T120RWD is an N-Channel, Field Stop VII (FS7) IGBT with an integrated SCR in a TO247-3L package. Utilizing novel field stop 7th generation IGBT technology and Gen7 Diode, it offers optimal performance with low conduction losses and good switching controllability for high-efficiency operation. It is suitable for applications such as motor control, UPS, data center, and high-power switching.Product AttributesBrand: onsemiCertifications: RoHS CompliantT

Product OverviewThe ISL9V3040D3S, ISL9V3040S3S, and ISL9V3040P3 are next-generation ECOSPARK Ignition IGBTs designed for automotive ignition circuits, specifically as coil drivers. These devices offer outstanding SCIS capability in space-saving D-Pak (TO-252), D2-Pak (TO-263), and TO-220 plastic packages. Internal diodes provide voltage clamping, eliminating the need for external components. ECOSPARK devices can be custom-made to specific clamp voltages.Product AttributesBran

Product OverviewThe FGA60N65SMD is a 650 V, 60 A Field Stop IGBT from ON Semiconductor, leveraging advanced Field Stop IGBT technology for optimal performance in applications demanding low conduction and switching losses. It offers high current capability, a positive temperature coefficient for easy paralleling, and low saturation voltage. This device is designed for demanding applications such as photovoltaic inverters, UPS, welding machines, PFC, and communication power

Product Description This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, offering superior performance in demanding switching applications with low on-state voltage and minimal switching loss. It is well suited for UPS and solar applications. The device incorporates a soft and fast co-packaged free-wheeling diode with a low forward voltage. Key advantages include extremely efficient Trench with Field Stop

Product OverviewThe FGHL40T65MQD is a 650 V, 40 A Field Stop Trench IGBT featuring 4th generation mid-speed IGBT technology and full current rated copak Diode technology. It offers high current capability, low saturation voltage, and optimized switching characteristics, making it suitable for parallel operation. This device is designed for applications such as Solar Inverters, UPS, ESS, and PFC converters.Product AttributesBrand: Semiconductor Components Industries,

Product Overview The OGH50T65 is a Silicon FS Trench IGBT designed for high-reliability applications. It offers reduced saturation pressure and fast switching speeds, making it easy to use in parallel configurations. Key benefits include high reliability, thermal stability, and a built-in quick-recovery diode. This IGBT is suitable for use in frequency transformers, UPS systems, and inverter welding machines. Product Attributes Brand: OSEN Product Type: Silicon FS Trench IGBT

FGH40N60UFD IGBT - Field Stop 600 V, 40 AUtilizing novel Field Stop IGBT technology, ON Semiconductor's field stop IGBTs deliver optimal performance for applications such as solar inverters, UPS, welders, microwave ovens, telecom, ESS, and PFC. These devices are designed for scenarios requiring low conduction and switching losses, offering high current capability, low saturation voltage (VCE(sat) = 1.8 V @ IC = 40 A), high input impedance, and fast switching. The device is Pb

Product OverviewThe AFGHL50T65SQD is a Field Stop Trench IGBT utilizing 4th generation high-speed technology. It is AEC Q101 qualified and offers optimal performance for both hard and soft switching topologies in automotive applications. Key advantages include its high current capability, low saturation voltage, fast switching, and tight parameter distribution, making it suitable for parallel operation.Product AttributesBrand: onsemi (Semiconductor Components Industries, LLC

Product OverviewThis Insulated Gate Bipolar Transistor (IGBT) features an Ultra Field Stop Trench construction, offering a robust and cost-effective solution for demanding switching applications. It provides superior performance with low on-state voltage and minimal switching loss, making it well-suited for UPS and solar applications. The device includes a soft and fast co-packaged free-wheeling diode with a low forward voltage.Product AttributesBrand: Semiconductor

Product OverviewThe AFGHL75T65SQ is a Field Stop Trench IGBT from onsemi, utilizing novel 4th generation IGBT technology. It offers optimal performance with low conduction and switching losses, making it ideal for high-efficiency operations in various applications where a reverse recovery specification is not required. Key features include a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, and low

Product OverviewThe FGHL50T65MQDTL4 is a Field Stop Trench IGBT featuring 4th generation mid-speed technology copacked with a full-rated current diode. It offers high current capability, low saturation voltage, and smooth, optimized switching with tight parameter distribution. Designed for demanding applications, it boasts a maximum junction temperature of 175C and a positive temperature coefficient for easy parallel operation. Typical applications include solar inverters,

Product DescriptionThe ISL9V3040D3S, ISL9V3040S3S, and ISL9V3040P3 are next-generation ignition IGBTs designed for automotive ignition circuits, specifically as coil drivers. They offer superior SCIS (Self-Clamped Inductive Switching) capability in space-saving D-Pak, D2-Pak, TO-262, and TO-220 packages. Internal diodes provide voltage clamping, eliminating the need for external components. ECOSPARK devices can be customized for specific clamp voltages.Product AttributesBrand

Product OverviewThe FGL60N100BNTD is a 1000 V, 60 A NPT Trench IGBT utilizing Fairchild's proprietary trench design and advanced NPT technology. It offers superior conduction and switching performance, high avalanche ruggedness, and easy parallel operation, making it ideal for hard switching applications such as UPS and welders. The device features high input impedance and a built-in fast recovery diode.Product AttributesBrand: ON Semiconductor (formerly Fairchild Semiconduct

Product OverviewThe FGH75T65SHDT is a 650 V, 75 A Field Stop Trench IGBT utilizing novel field stop technology. It offers optimum performance for applications such as solar inverters, UPS, welders, telecom, ESS, and PFC, where low conduction and switching losses are essential. Key advantages include a high maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, low saturation voltage, and tight parameter

Product OverviewThe Fairchild SGL160N60UFD is an Ultrafast IGBT from the UFD series, designed for high-speed switching applications. It offers low conduction and switching losses, making it suitable for motor control, general inverters, robotics, servo controls, and power supplies. Key features include high input impedance and a CO-PAK with an integrated Fast Diode (FRD) for enhanced performance.Product AttributesBrand: Fairchild Semiconductor CorporationProduct Series:

NGTB15N120FL2WG IGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust and cost-effective Field Stop II Trench construction, offering superior performance in demanding switching applications with low on-state voltage and minimal switching loss. It is well-suited for UPS and solar applications. The device incorporates a soft and fast co-packaged free-wheeling diode with a low forward voltage.FeaturesExtremely Efficient Trench with Field Stop

Product OverviewThe FGB3040G2-F085 / FGD3040G2-F085 / FGP3040G2-F085 / FGI3040G2-F085 are N-Channel Ignition IGBTs from the EcoSPARK2 series. These devices offer a high Self Clamping Inductive Switching (SCIS) energy capability of 300mJ at 25C and feature a logic-level gate drive. They are qualified to AEC Q101 standards, RoHS compliant, and suitable for automotive ignition coil driver circuits and coil-on-plug applications.Product AttributesBrand: ON SemiconductorProduct

SGH40N60UFD Ultra-Fast IGBT The Fairchild SGH40N60UFD is an Ultra-Fast Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring high-speed switching. It offers low conduction and switching losses, making it suitable for motor control, general inverters, robotics, and servo controls. Key features include a low saturation voltage of 2.1V at 20A, high input impedance, and an integrated fast recovery diode (FRD) with a typical reverse recovery time (trr) of

Product OverviewUtilizing novel field stop IGBT technology, ON Semiconductor's FGH80N60FD2 offers optimal performance for induction heating and PFC applications. This IGBT is designed for scenarios requiring low conduction and switching losses, featuring high current capability and a low saturation voltage of 1.8 V (Typ.) at 40 A. It boasts high input impedance and fast switching characteristics, making it a suitable choice for demanding applications.Product AttributesBrand: