Single IGBTs

FGA40T65SHD 650 V, 40 A Field Stop Trench IGBTLeveraging novel field stop IGBT technology, this 3rd generation IGBT offers optimized performance for applications such as solar inverters, UPS, welders, telecom, ESS, and PFC, where low conduction and switching losses are critical. It provides high current capability, a positive temperature coefficient for easy parallel operation, and a low saturation voltage.Product AttributesBrand: ON Semiconductor (formerly Fairchild

Product OverviewThe AFGY160T65SPD-B4 is a Field Stop Trench IGBT designed for high-efficiency power switching applications. It features very low saturation voltage, high junction temperature capability, and excellent parallel operation performance. This device is copacked with a soft, fast recovery diode and is AEC-Q101 qualified.Product AttributesBrand: onsemiCertifications: AEC-Q101 Qualified, PPAP Capable, PbFree, Halogen Free/BFR Free, RoHS CompliantOrigin: Semiconductor

Product OverviewThe FGHL50T65MQD is a 650 V, 50 A Field Stop Trench IGBT featuring 4th generation mid-speed IGBT technology and full current rated copak Diode technology. It offers high current capability, low saturation voltage (1.45 V typ. at 50 A), and optimized switching characteristics. Designed for applications requiring high reliability and performance, it is suitable for solar inverters, UPS, ESS, PFC, and converters.Product AttributesBrand: onsemiCertifications: RoHS

Product OverviewThe FGHL40T65MQDT is a Field Stop Trench IGBT featuring 4th generation mid-speed technology, copacked with a full-rated current diode. It offers high current capability, low saturation voltage, and smooth, optimized switching, making it suitable for parallel operation. This device is designed for applications such as solar inverters, UPS, ESS, and PFC converters.Product AttributesBrand: ON SemiconductorCertifications: RoHS CompliantTechnical SpecificationsPara

Product OverviewThe FGD5T120SH is a 1200 V, 5 A FS Trench IGBT from ON Semiconductor, utilizing novel field stop IGBT technology. It offers optimum performance for inrush current limitation, lighting, and home appliance applications. Key advantages include FS Trench Technology with a positive temperature coefficient, high speed switching, low saturation voltage (VCE(sat) = 2.9 V @ IC = 5 A), 100% of parts tested for ILM, and high input impedance. This device is RoHS compliant

Product OverviewThe FGA6560WDF is a 650 V, 60 A Field Stop Trench IGBT from Fairchild Semiconductor, designed for welder and industrial applications. It offers an optimum performance with low conduction and switching losses, featuring a maximum junction temperature of 175C and a positive temperature coefficient for easy parallel operation. This IGBT boasts high current capability, low saturation voltage (1.8 V Typ. at 60 A), 100% testing for ILM, high input impedance, and

Product Overview The FGAF20N60SMD is a 600 V, 20 A Field Stop IGBT utilizing novel field stop technology. It offers optimum performance for solar inverter, UPS, welder, and PFC applications, emphasizing low conduction and switching losses. Key features include a maximum junction temperature of 175C, positive temperature co-efficient for easy parallel operation, high current capability, low saturation voltage (1.7 V Typ. @ IC = 20 A), high input impedance, fast switching (EOFF

Product OverviewThe FGP20N60UFD is a 600 V, 20 A Field Stop IGBT from ON Semiconductor, utilizing novel field stop IGBT technology. It offers optimum performance for applications requiring low conduction and switching losses, such as solar inverters, UPS, welders, and PFC systems. Key features include high current capability, low saturation voltage (VCE(sat) = 1.8 V @ IC = 20 A), high input impedance, and fast switching. This product is RoHS Compliant.Product AttributesBrand:

ON Semiconductor FGH50T65SQD 650 V, 50 A Field Stop Trench IGBT The ON Semiconductor FGH50T65SQD is a 650 V, 50 A Field Stop Trench IGBT utilizing novel field stop technology. This series offers optimum performance for applications such as solar inverters, UPS, welders, telecom, ESS, and PFC, where low conduction and switching losses are essential. Key features include a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high

Product OverviewThe AFGHL75T65SQDC is a 650 V, 75 A IGBT featuring novel field stop 4th generation IGBT technology and 1.5th generation SiC Schottky Diode technology. It offers optimal performance with low conduction and switching losses, making it ideal for high-efficiency operations in applications such as totem pole bridgeless PFC and Inverter. Its features include a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high

Product OverviewThe FGH40N60SMD is a 600 V, 40 A Field Stop IGBT from Fairchild Semiconductor, utilizing novel field stop IGBT technology. It offers optimized performance for applications requiring low conduction and switching losses, such as solar inverters, UPS, welders, PFC, telecom, and ESS. Key advantages include a maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability, low saturation voltage (1.9V Typ.

ON Semiconductor FGY40T120SMD - 1200 V, 40 A Field Stop Trench IGBT The FGY40T120SMD is a Field Stop Trench IGBT from ON Semiconductor, utilizing innovative FS Trench technology for optimal performance in hard switching applications. It offers a positive temperature coefficient, high speed switching, and low saturation voltage, making it suitable for solar inverters, UPS, welders, and PFC applications. Product Attributes Brand: ON Semiconductor (formerly Fairchild Semiconduct

Product OverviewThe FGY75T120SQDN is an Ultra Field Stop IGBT featuring a robust and cost-effective Trench construction. It offers superior performance in demanding switching applications with low on-state voltage and minimal switching loss. This IGBT is well-suited for UPS and solar applications and incorporates a soft and fast co-packaged free-wheeling diode with a low forward voltage.Product AttributesBrand: ON SemiconductorCertifications: RoHS CompliantTechnical

Product Overview The FGY100T120SWD is a 1200 V, 100 A N-Channel IGBT Power Module utilizing novel Field Stop 7th generation IGBT technology and a Gen7 Diode in a TO247 3-lead package. It offers optimized performance with low switching and conduction losses, making it ideal for high-efficiency operations in applications such as Solar, UPS, and Energy Storage Systems (ESS). Product Attributes Brand: onsemi Technology: Field Stop VII (FS7) Package: TO247-3L Certifications: RoHS

Product OverviewThe HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBTs designed for high voltage switching applications. These devices combine the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, making them ideal for AC and DC motor controls, power supplies, and drivers for solenoids, relays, and contactors operating at moderate frequencies where low conduction losses are essential.Product AttributesBrand: ON

Product OverviewUtilizing advanced Field Stop Trench IGBT Technology, ON Semiconductor's FGH75T65UPD-F085 is a 650 V, 75 A IGBT designed for high-performance applications. It offers optimal performance in automotive chargers, solar inverters, UPS, and digital power generators by minimizing conduction and switching losses. Key advantages include a high maximum junction temperature of 175C, positive temperature coefficient for easy parallel operation, high current capability,

Product OverviewThe FGL40N120AND is a 1200V NPT IGBT from Fairchild Semiconductor, designed for high-speed switching applications. It features low conduction and switching losses due to its NPT technology, offering a VCE(sat) of 2.6V at IC = 40A and a typical reverse recovery time (trr) of 75ns for the integrated FRD. This IGBT is ideal for induction heating, UPS, AC/DC motor controls, and general-purpose inverters.Product AttributesBrand: Fairchild SemiconductorTechnology:

Product OverviewThe FGHL40T120SWD is a N-Channel, Field Stop VII (FS7) IGBT with a non-SCR design, utilizing the latest IGBT technology and Gen7 Diode in a TO247 3-lead package. It offers optimal performance with low switching and conduction losses, making it ideal for high-efficiency operations in applications such as Solar, UPS, and Energy Storage Systems (ESS).Product AttributesBrand: onsemiCertifications: RoHS CompliantTechnical SpecificationsParameterSymbolValueUnitNotes

Product OverviewThe EcoSPARK 2 Ignition IGBT is a high-performance N-Channel Ignition IGBT designed for automotive ignition coil driver circuits. It offers a high SCIS Energy rating of 300 mJ at 25C, logic-level gate drive, and is AEC-Q101 Qualified and PPAP Capable. This device is Pb-Free and RoHS Compliant, making it suitable for high current ignition systems and coil-on-plug applications.Product AttributesBrand: EcoSPARK 2Origin: Semiconductor Components Industries, LLC

Product OverviewThis Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, providing superior performance in demanding switching applications with low on-state voltage and minimal switching loss. It is well-suited for UPS and solar applications, incorporating a soft and fast co-packaged free-wheeling diode with a low forward voltage. Key advantages include extremely efficient Trench with Field Stop Technology, a TJmax