Single IGBTs

Product OverviewThe SPT15N120F1 is a Field Stop Trench IGBT designed for soft switching applications. It offers low switching losses, high energy efficiency, and high avalanche ruggedness. Key features include Trench-Stop Technology for high-speed switching, temperature stability, low VCEsat, and easy parallel switching. Applications include inductive cooking, inverterized microwave ovens, resonant converters, and other soft switching scenarios.Product AttributesBrand:

Product OverviewThe SPT25N120U1 is a 1200V / 25A Trench Field Stop IGBT designed for high reliability and performance. It features Trench-Stop Technology for high-speed switching, enhanced ruggedness, and a short circuit withstand time of 10s. Its low VCEsat and easy parallel switching capability make it suitable for demanding applications.Product AttributesBrand: SupericProduct Series: Trench Field Stop IGBTModel: SPT25N120U1Package: TO247Packaging: TubeTechnical Specificati

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Product OverviewThe IKW50N65H5 650V Trench Field Stop IGBT offers low switching losses, high energy efficiency, and high avalanche ruggedness. Its Trench-Stop Technology ensures high-speed switching, robust performance, low VCEsat, and easy parallel switching capability. This IGBT is ideal for motion control, solar applications, and welding machines.Product AttributesBrand: SPTECHProduct Code: IKW50N65H5Package: TO247Packaging: TubeWebsite: http://www.zhichaowei.com/Technical

Product OverviewThe SPT75N65F1 is a 650V, 75A Trench Field Stop IGBT designed for high-speed switching applications. It features high ruggedness, temperature stability, and a short circuit withstand time of 5s. Its low VCEsat and easy parallel switching capability make it suitable for demanding power electronics applications.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical Specificatio

GT40QR21 Discrete IGBTsThe GT40QR21 is a silicon N-Channel IGBT designed for voltage-resonant inverter switching applications. It features a 6.5th generation IGBT with a monolithically integrated freewheeling diode (RC-IGBT), offering high-speed switching capabilities with typical fall time (tf) of 0.20 s and reverse recovery time (trr) of 0.60 s. The device boasts a low saturation voltage of 1.9 V (typ.) and a high junction temperature capability of 175C (max).Product

Product OverviewThe IKW40N120H3 is a 1200V / 40A Trench Field Stop IGBT designed for high-reliability applications. Featuring Trench-Stop Technology, it offers high-speed switching, excellent ruggedness, and a short circuit withstand time of 10s. Its low VCEsat and easy parallel switching capability make it suitable for demanding power electronics systems. This IGBT is ideal for Uninterruptible Power Supplies, Solar Inverters, Welding, and PFC applications.Product AttributesB

Product OverviewThe SPT50N65F1A is a 650V, 50A Trench Field Stop IGBT designed for high efficiency and ruggedness. It features low switching losses, high energy efficiency, and excellent avalanche capability, making it ideal for motion control, solar applications, and welding machines. The Trench-Stop Technology ensures high-speed switching, temperature stability, short circuit withstand time, and easy parallel switching.Product AttributesBrand: SPTECHProduct Code: SPT50N65F1

Product OverviewThe SPT40N120F1C is a high-performance IGBT with Trench-Stop Technology, offering exceptional reliability and efficiency. It features a high breakdown voltage of 1200V, high-speed switching, and excellent ruggedness. Its positive temperature coefficient in VCEsat ensures easy parallel switching, and it boasts enhanced avalanche capability. This product is ideal for demanding applications such as Uninterruptible Power Supplies, Solar Inverters, Welding, and PFC

SPT40N120T1B1 Trench Field Stop IGBT The SPT40N120T1B1 is a 1200V / 40A Trench Field Stop IGBT designed for high reliability and performance. It features Trench-Stop Technology, offering tight parameter distribution, high ruggedness, and stable temperature behavior. Key advantages include a short circuit withstand time of 10s, low VCE(SAT), and easy parallel switching capability due to a positive temperature coefficient in VCE(SAT). It also boasts enhanced avalanche

Product OverviewThe IKW40N120T2 is a 1200V / 40A Trench Field Stop IGBT designed for high-reliability applications. It features Trench-Stop Technology for very tight parameter distribution, high ruggedness, and stable temperature behavior. Key advantages include a short circuit withstand time of 10s, low VCE(SAT), and easy parallel switching capability due to a positive temperature coefficient in VCE(SAT). It also offers enhanced avalanche capability.Product AttributesBrand:

Sanken Electric SLA5222 Partial Switching PFC Integrated IGBT and Diode Bridge Rectifier The Sanken Electric SLA5222 is an integrated IGBT and diode bridge rectifier designed for partial switching PFC applications. It offers board space reduction, low saturation voltage for the IGBT, and a low forward voltage drop for the diode bridge rectifier. The device utilizes a clip lead for inner lead connections, contributing to low inductance, low resistance, and high power

Product Overview The 2SK2225-80-E is a high-speed power switching MOS FET featuring a high breakdown voltage of 1500V and a drain current of 2A. It offers low drive current and is suitable for applications requiring fast switching characteristics. This component is classified under the "Standard" quality grade, making it appropriate for a wide range of electronic equipment. Product Attributes Brand: RENESAS Quality Grade: Standard Package Codes: PRSS0003ZP-A, PRSS0003ZD-A

RJH65T14DPQ-A0 650V - 50A - IGBT The RJH65T14DPQ-A0 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) optimized for current resonance applications such as induction heating and microwave ovens. It features a low collector-to-emitter saturation voltage (VCE(sat)) of 1.45V typ., a built-in fast recovery diode, and utilizes trench gate and thin wafer technology for enhanced performance. Product Attributes Brand: Renesas Package Code: PRSS0003ZH-A (TO-247A) Technical

Product OverviewThe NXH25C120L2C2SG is a transfer-molded power module featuring a converter-inverter-brake circuit. It integrates six 25 A, 1600 V rectifiers, six 25 A, 1200 V IGBTs with inverse diodes, one 25 A, 1200 V brake IGBT with brake diode, and an NTC thermistor. Key advantages include low thermal resistance and a compact package with solderable pins. This module is suitable for industrial motor drives and servo drives.Product AttributesBrand: onsemi (Semiconductor

Product OverviewThe FGA40N65SMD is a 650 V, 40 A Field Stop IGBT from ON Semiconductor, formerly Fairchild Semiconductor. This second-generation IGBT series utilizes innovative Field Stop IGBT technology, offering optimal performance with low conduction and switching losses. It is designed for critical applications such as photovoltaic inverters, UPS, welding machines, induction heating, communication power supplies, and ESS.Product AttributesBrand: ON Semiconductor (formerly

Product OverviewThe ISL9V3040x3ST-F085C is an EcoSPARK Ignition IGBT designed for automotive ignition coil driver circuits. It offers a high energy capability of 300 mJ, a 400 V breakdown voltage, and a logic-level gate drive. This device is AEC-Q101 qualified and PPAP capable, making it suitable for high-current ignition systems and coil-on-plug applications. It is Pb-Free and RoHS Compliant.Product AttributesBrand: Semiconductor Components Industries, LLC (onsemi)Certificat

Product Overview The OGH25T120 is a Silicon FS Trench IGBT designed for high-reliability applications. It offers reduced saturation pressure and fast switching speeds, making it easy to use in parallel configurations. Key features include high thermal stability and a built-in fast-recovery diode. This IGBT is suitable for use in frequency transformers, UPS systems, and inverter welding machines. Product Attributes Brand: OSEN Publication Order Number: OGH25T120 Revision: 21.2

Product DescriptionUtilizing the novel field stop 7th generation IGBT technology and the Gen7 Diode in a TO247 3-lead package, the FGY100T120RWD offers optimal performance with low conduction losses and good switching controllability for high-efficiency operation in various applications. Its advantages include low conduction loss, optimized switching, high current capability, and suitability for parallel operation due to a positive temperature coefficient. It is designed for

Product OverviewThe ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are next-generation ignition IGBTs designed for automotive ignition circuits, specifically as coil drivers. They offer superior SCIS capability in space-saving D-Pak (TO-252), D-Pak (TO-263), TO-262, and TO-220 plastic packages. Internal diodes provide voltage clamping, eliminating the need for external components. EcoSPARK devices can be custom-made to specific clamp voltages.Product AttributesBrand