Atomic Layer Deposition in Protective Coating Field
 
 
Applications

 
Working Principle
In a traditional CVD process, the gas-phase precursors will continuously or at least partially react. In the ALD
process, however, the reactions only occur on the substrate surface. It is a cyclic process consisting of multiple
partial reactions, that is, the substrate contacts with precursors in sequence and reacts asynchronously. At any
given time, only parts of the reactions occur on the substrate surface. These different reaction steps are self-limiting,
that is, the compounds on the surface only can be prepared from precursors suitable for film growth. Partial reactions
are completed when the spontaneous reactions no longer occur. The process chamber will be purged and/or emptied
by inert gas among different reaction steps in order to remove all the pollutants generated by precursor molecules in
the previous processes.
 
Features

                                                                                                                
Coating Samples

Process Steps
→ Place the substrate for coating into the vacuum chamber;
→ Vacuumize the vacuum chamber at high and low temperature, and rotate the substrate synchronously;
→ Start coating: the substrate is contacted with precursor in sequence and without simultaneous reaction;
→ Purge it with high-purity nitrogen gas after each reaction;
→ Stop rotating the substrate after the film thickness is up to standard and the operation of purging and cooling is
    completed, then take out the substrate after the vacuum breaking conditions are met.
 
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