Single FETs, MOSFETs

Product Overview The SP2006KT2 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface mount device features ESD protection up to 2KV. It is suitable for applications such as battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP2006KT2 Package: SOT-23 Circuit Diagram Marking: 06K ESD Protection: 2KV Technical Specifications Parameter

Product Overview The SP60N10GDNK is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., engineered with advanced Split Gate Trench Technology for fast switching speeds and enhanced performance. This surface mount device is ideal for demanding applications such as DC-DC converters and motor control, offering a continuous drain current of 35A and a low on-state resistance. It features 100% Single Pulse avalanche energy testing for reliability. Product

Product Overview The SP40N01AGHTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management. The device is offered in a TOLL package. Product Attributes Brand: Siliup Semiconduc

Product Overview The SP60P03GHTQ is a 60V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, DC-DC converters, and power management. It features fast switching, low gate charge and Rds(on), and utilizes advanced split gate trench technology. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP60P03GH Package: TO-220-3L

Product Overview The SP40N03AGNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology. This MOSFET is designed for power switching applications, PWM applications, and DC-DC converters. It has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP40N03AGNK Device

Product Overview The SP4435BP8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 4435 Package: SOP-8L Origin: China

Product Overview The SP6005ADP8 is a 60V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: SP6005ADP8 Product Type: Dual N-Channel

Siliup Semiconductor Technology Co. Ltd. SP010N01BGHTO 100V N-Channel Power MOSFET The SP010N01BGHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance applications. It features fast switching, low gate charge, and low Rdson, enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for PWM applications, hard switched, and high-frequency circuits

Product Overview The SP010N70P8 is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, this MOSFET features fast switching, low gate charge, and low RDS(on). It is suitable for hard switched and high frequency circuits, as well as Uninterruptible Power Supply (UPS) systems. The device is tested for 100% single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Line:

Product Overview The S1P05R120HBB is a 1200V / 240A All-Silicon Carbide (SiC) MOSFET Half-Bridge Module from Qingchun Semiconductor (Ningbo) Co., Ltd. This module is designed for high-speed switching, high power density, and high-frequency operation, offering ultra-low losses. It is suitable for a wide range of applications including servo drives, UPS systems, motor drives, high power converters, photovoltaic systems, wind power generation, and induction heating equipment.

Product Overview The SP3400AT1 is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount SOT-23-3L package. Key applications include battery switches and DC/DC converters. This device features low on-resistance at various gate-source voltages, including 20m at 10V, 25m at 4.5V, and 30m at 2.5V. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: SP3400AT1 Package:

Product Overview The SP40N08P8 is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, it features fast switching, low gate charge, and low RDS(on). This MOSFET is suitable for hard-switched and high-frequency circuits, as well as uninterruptible power supplies. It undergoes 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 40N08 Package: SOP-8L

Product Overview The SP40N06GNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for power switching applications, PWM applications, and DC-DC converters. It is available in a PDFN5X6-8L package. Product Attributes Brand: Siliup Semiconductor Technology Co.

Product Overview The SP40N03GNJ is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., engineered for high-efficiency applications. It features fast switching speeds, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for DC-DC converters, motor control, and portable equipment applications. Product Attributes Brand: Siliup Semiconductor

Product Overview The SP20N03TH is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for high-frequency switching and synchronous rectification, this MOSFET features fast switching speeds, low gate charge, and low RDS(on). It is ideal for DC-DC converter applications and is 100% tested for single-pulse avalanche energy. The device is supplied in a TO-252 package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code:

Product Overview The SP47MF65TF is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for fast switching applications, it features low gate charge and low RDS(on). This MOSFET is suitable for PWM applications, hard switched and high frequency circuits, and power management systems. It has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 47MF65 Package: TO-247

Product OverviewThe SL2301T is a P-Channel MOSFET featuring leading trench technology for low RDS(on) and low Gate Charge. It is designed for applications such as video monitors and power management.Product AttributesBrand: SLKORMicroModel: SL2301TPackage: SOT-523Technical SpecificationsParameterConditionMinTypMaxUnitAbsolute Maximum RatingsVDS-20VVGS±10VTJ150±CTSTG-55150±CISTc=25±C-2.3AIDMTc=25±C-5.2AIDTc=25±C-2.3APDTc=25±C0.7WRΘJAMounted on Large Heat Sink178±C/WStatic

Product Overview The SP80N03AHTQ is an 80V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it ideal for power switching applications, DC-DC converters, and power management systems. This device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP80N03AHTQ Package: TO-220-3L Technical Specifications Parameter

Siliup Semiconductor SP60N03GNK 60V N-Channel Power MOSFET The SP60N03GNK is a 60V N-Channel Power MOSFET designed for efficient power switching applications. It features fast switching speeds, low gate charge, and a low on-state resistance (RDS(on)) thanks to its advanced split gate trench technology. This MOSFET is suitable for hard-switched and high-frequency circuits, as well as uninterruptible power supply systems. It undergoes 100% single pulse avalanche energy testing

Product Overview The SP16MF30TO is a 300V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for PWM applications, hard-switched, and high-frequency circuits, as well as power management systems. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP16MF30TO Package: TOLL Technical