Single FETs, MOSFETs

Product Overview The SP010P35GNK is a 100V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., engineered with advanced Split Gate Trench Technology. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, battery management, and uninterruptible power supplies. This device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code

Product Overview The SP2102T3 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this MOSFET is suitable for surface mount applications. Key applications include battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: N-Channel MOSFET Package Type: SOT-323 Device Code: TS2 Technical Specifications Parameter Symbol Conditions Min. Typ. Max. Unit

Product Overview The SP20P18T1 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It features a low on-resistance and robust thermal characteristics. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP20P18T1 Device Code: 20P18 Package: SOT-23-3L Technology: P-Channel MOSFET

Product Overview The SP60P25NK is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, a surface mount package, and is ROHS Compliant & Halogen-Free. This MOSFET is 100% Single Pulse avalanche energy Tested and is suitable for applications such as DC-DC Converters and Motor Control. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: SP60P25NK Package: PDFN5X6-8L Compliance: ROHS Compliant & Halogen

Product Overview The SP015N03BGHTQ is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, DC-DC converters, and power management. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP015N03BGHTQ Technology:

Product Overview The SP013N03GHTO is a 135V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched and high frequency circuits, and power management. It comes in a TOLL package. Product Attributes Brand: Siliup Semiconductor Technology Co.

Product Overview The SP60N03GHTH is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd

Product Overview The 2N7002KDW is a 60V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount package, with ESD protection up to 2KV. This MOSFET is suitable for applications such as battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: 2N7002KDW Package: SOT-363 Device Code: 72K Technical Specifications Parameter Symbol Conditions

Product Overview The SP2006KNC is a 20V P-Channel MOSFET designed for surface mount applications. It features low RDS(on) and operates at low logic-level gate drive, making it suitable for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics. This device is ESD protected. Product Attributes Brand: Shanghai Siliup Semiconductor Technology Co. Ltd. Package Type: DFN1006-3L Device Code: 06K Technical Specifications

Product Overview The SP12N65TG is a 650V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching applications, this MOSFET features fast switching speeds, low gate charge, and low Rdson. It is 100% tested for single pulse avalanche energy and is ideal for DC-DC converters and synchronous rectification. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: SP12N65TG Package: TO-220F Technical

SP4012CTM 40V Complementary MOSFET Product Overview The SP4012CTM is a 40V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. This lead-free, surface-mount device is 100% avalanche energy tested, making it suitable for demanding applications such as battery protection, load switching, and power management. Its complementary nature allows for versatile circuit designs. Product Attributes Brand: Siliup

Product Overview The SP011N02GHTF is a 110V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, DC-DC converters, and power management. It features fast switching, low gate charge, and low RDS(on), leveraging advanced split gate trench technology. The device is 100% tested for single pulse avalanche energy, ensuring reliability in demanding applications. Product Attributes Brand: Siliup Semiconductor Technology Co.

Product Overview The SP60N01BGHMT is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching, low gate charge, and low Rdson. This MOSFET is ideal for PWM applications, hard-switched and high-frequency circuits, and power management systems. It features 100% single pulse avalanche energy testing for enhanced reliability. Product Attributes Brand: Siliup Semiconductor Technology

Product Overview The SP010N60GDNK is a 100V Dual N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., featuring advanced split gate trench technology for fast switching speeds and reliable, rugged performance. It is designed for power management functions, industrial and motor drive applications, and DC-DC converters. This MOSFET offers a continuous drain current of 14A at 25 and 10A at 100, with a low on-resistance of 60m at 10V and 70m at 4.5V. It is tested

Product Overview The SP30N01BGNK is a 30V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications and DC-DC converters. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. The device has undergone 100% single pulse avalanche energy testing, ensuring reliability in demanding applications. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd.

Product Overview The SP50N120CTF is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high-speed switching with low capacitances, high blocking voltage with low RDS(on), and is designed for easy paralleling and simple driving. It is RoHS compliant and suitable for applications such as Power Factor Correction Modules, Switch Mode Power Supplies, Photovoltaic Inverters, UPS Power Supplies, and High Voltage DC/DC Converters.

Product Overview The SP60N02BGTH is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd.

Product Overview The SP4435P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high-frequency circuits, and uninterruptible power supplies. The device has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: SP4435P8 Technology: P-Channel MOSFET

Product Overview The SP30P13P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, it features fast switching speeds, low gate charge, and low RDS(on). This device is suitable for hard-switched and high-frequency circuits, as well as uninterruptible power supply systems. It has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Line:

Product Overview The SP2012CNJ is a 20V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed with TrenchFET technology for excellent RDS(on) and low gate charge. This device is suitable for applications such as bridges and inverters. It is available in a PDFN3X3-8L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP2012CNJ Complementary MOSFET: Yes Package: PDFN3X3-8L Marking: 2012C = Device code; * = Month Code