Single FETs, MOSFETs
Silicon Carbide MOSFET Siliup SP25N120CTK 1200V Low On Resistance Device for Photovoltaic Inverters
Product Overview The SP25N120CTK is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-speed switching applications with low capacitances and high blocking voltage. It offers low RDS(on), ease of paralleling, and simple driving characteristics, making it suitable for demanding power electronics applications. This RoHS-compliant device is ideal for Power Factor Correction Modules, Switch Mode Power Supplies, Photovoltaic
SP010N13GTQ N Channel 100V Power MOSFET Featuring Split Gate Trench Technology for Battery Management
Product Overview The SP010N13GTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features advanced Split Gate Trench Technology, offering fast switching, low gate charge, and low RDS(on). This MOSFET is suitable for battery management and uninterruptible power supply systems. It has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co.
Siliup SP40N16TS 40V N Channel MOSFET Featuring Low On Resistance and High Current Handling Capability
Product Overview The SP40N16TS is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features high power and current handling capability and is suitable for surface mount applications. Key applications include battery switches and DC/DC converters. The device offers a low on-resistance of 16m at 10V and 19m at 4.5V, with a continuous drain current of 8A. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Line: SP Model: SP40N16TS
20V P Channel MOSFET Siliup SP2006KT5 Featuring 2KV ESD Protection and Surface Mount SOT 523 Package
Product Overview The SP2006KT5 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. It features a surface mount package and ESD protection of 2KV. This MOSFET is ideal for applications such as battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: SP2006KT5 Channel Type: P-Channel Voltage Rating: 20V Package: SOT-523 ESD Protection: 2KV
Complementary MOSFET Device Siliup SP4606BCP8 with 30V Drain Source Voltage Lead Free Surface Mount
Product Overview The SP4606BCP8 is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capabilities, making it suitable for applications such as battery protection, load switching, and power management. It is available in a lead-free, surface mount SOP-8L package and has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type:
100V N Channel MOSFET Siliup SP010N08GTH with Fast Switching Speeds and Low Drain Source Resistance
Product Overview The SP010N08GTH is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, this MOSFET offers fast switching speeds, low gate charge, and low RDS(on). It is designed for power switching applications, battery management systems, and uninterruptible power supplies. The device is available in a TO-252 package and has undergone 100% single pulse avalanche energy testing. Product Attributes
Complementary MOSFET Siliup SP1022CP8 100V Drain Source Voltage 2.5A Continuous Current SOP8L Package
SP1022CP8 100V Complementary MOSFET The SP1022CP8 is a 100V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capabilities, making it suitable for applications such as battery protection, load switching, and power management. It features a lead-free product acquisition and is available in a surface mount SOP-8L package. The SP1022CP8 has undergone 100% single pulse avalanche energy testing. Product Attributes
650V Silicon Carbide MOSFET Siliup SP75N65CTF Designed for High Current and High Voltage Applications
Product Overview The SP75N65CTF is a 650V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-speed switching applications with low capacitances. It offers high blocking voltage combined with low RDS(on), making it easy to parallel and simple to drive. This RoHS compliant device is suitable for a wide range of power electronics applications including Power Factor Correction Modules, Switch Mode Power Supplies, Photovoltaic Inverters,
Power switching MOSFET Siliup SP3070TH 30V N Channel device tested for single pulse avalanche energy
Product Overview The SP3070TH is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. It features fast switching capabilities, low gate charge, and low RDS(on) for optimal performance. The device is 100% tested for single pulse avalanche energy, making it suitable for demanding applications such as DC-DC converters and load switching. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code:
N Channel Power MOSFET 150V Siliup SP015N05AGHTD with Fast Switching and Low RDS on Performance
Product Overview The SP015N05AGHTD is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched and high frequency circuits, and power management. It is supplied in a TO-263 package. Product Attributes Brand: Siliup Semiconductor
Power Management MOSFET Siliup SP30N04NJ 30V N Channel with Fast Switching and Low RDS on Resistance
Product Overview The SP30N04NJ is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, this MOSFET features fast switching speeds and low on-resistance, with key parameters like RDS(on)TYP at 4.2m@10V and 5.7m@4.5V. It is 100% tested for single pulse avalanche energy. This component is ideal for applications such as DC-DC converters and power management systems. It comes in a PDFN3X3-8L package. Product Attributes Brand
Power Switching MOSFET Siliup SP30N08P8 30V N Channel Device with Low RDS on and Fast Switching
Product Overview The SP30N08P8 is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on) at various gate voltages, making it suitable for hard-switched and high-frequency circuits, as well as uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device
Low rds on mosfet Siliup SP60N30P8 60 volt n channel device ideal for high frequency power circuits
Product Overview The SP60N30P8 is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high-frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 60N30 Package: SOP-8L Technical Specificat
Siliup SP30N04TH 30 Volt MOSFET Featuring TO 252 Package and Low Rdson for Power Switching Applications
Product Overview The SP30N04TH is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. It offers fast switching, low gate charge, and low Rdson, making it suitable for applications like DC-DC converters and load switching. This device features 100% single pulse avalanche energy testing for enhanced reliability. Product Attributes Brand: Siliup Semiconductor Technology Co., Ltd. Product Code: SP30N04TH Device Code: 30N04 Package: TO-252 Technical Specification
Surface Mount SOT 223 Package N Channel MOSFET Siliup SP6003TC Featuring 3A Continuous Drain Current Rating
Product Overview The SP6003TC is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a typical on-resistance of 80m at 10V and 90m at 4.5V, with a continuous drain current rating of 3A. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: SP6003TC Type: N-Channel MOSFET Package: SOT
N Channel 30V MOSFET Siliup SP30N01AAGTO Featuring Fast Switching Low RDS on and Single Pulse Avalanche Energy Test
Product Overview The SP30N01AAGTO is a 30V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management. The device is available in a TOLL package. Product Attributes Brand: Siliup
Complementary MOSFET 60V lead free surface mount device Siliup SP6023CP8 for power management circuits
Product Overview The SP6023CP8 is a 60V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this lead-free, surface-mount device is suitable for applications such as battery protection, load switching, and power management. It offers robust performance with distinct N-channel and P-channel characteristics for versatile circuit designs. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type:
150V N Channel Power MOSFET with Low Gate Charge and High Current Capability Siliup SP015N08GHTF
Product Overview The SP015N08GHTF is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP015N08GHTF
Low Gate Charge 150V N Channel Power MOSFET Siliup SP015N04AGHTO for Power Conversion Applications
Product Overview The SP015N04AGHTO is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. It is designed for applications requiring high efficiency and reliability, including PWM applications, hard-switched, and high-frequency circuits, as well as power management systems. The MOSFET has undergone 100% single pulse avalanche energy
Dual N Channel MOSFET Siliup SP30N08DP8 30V 10A Power Switching Device with Low Gate Charge
Product Overview The SP30N08DP8 is a 30V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for power switching applications, it features fast switching, low gate charge, and low Rdson. Its 100% single pulse avalanche energy test ensures reliability in demanding environments, making it suitable for hard-switched and high-frequency circuits, including Uninterruptible Power Supplies (UPS). Product Attributes Brand: Siliup Semiconductor Technology Co.