Single FETs, MOSFETs

Product DescriptionThe RU20P7C is a P-Channel Advanced Power MOSFET designed for efficient power management applications. It features low on-resistance, a super high-density cell design, and is reliable and rugged. This device is suitable for load switching, power management, and battery protection circuits. Available in lead-free and green (RoHS compliant) versions.Product AttributesBrand: RuichipsOrigin: Shenzhen, ChinaCertifications: RoHS Compliant (Lead Free and Green

Product Overview The SG2M040120LH is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, fully controllable dv/dt, and high blocking voltage with low on-resistance. The device features a fast intrinsic diode with low reverse recovery charge (Qrr) and temperature-independent turn-off switching losses. These characteristics contribute to reduced cooling effort, improved

Product Overview The S1M075120D2 is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt, combined with high blocking voltage and low on-resistance. The integrated fast intrinsic diode with low reverse recovery (Qrr) contributes to temperature-independent turn-off switching losses. This RoHS and halogen-free compliant component is ideal for

Product OverviewThe TP65H100G4PS is a 650V, 92m Gallium Nitride (GaN) FET utilizing Renesass Gen IV platform. This normally-off device integrates a high-voltage GaN HEMT with a low-voltage silicon MOSFET, offering enhanced reliability and performance. The Gen IV SuperGaN platform leverages advanced epitaxy and patented design technologies to improve manufacturability and efficiency over silicon by reducing gate charge, output capacitance, crossover loss, and reverse recovery

Product OverviewThe 2SK1317 is a Silicon N Channel MOS FET designed for high-speed power switching applications. It features a high breakdown voltage of 1500V, low drive current, and no secondary breakdown, making it suitable for switching regulators, DC-DC converters, and motor drivers.Product AttributesBrand: RENESASPackage Code: PRSS0004ZE-APackage Name: TO-3PTechnical SpecificationsItemSymbolRatingsUnitTest conditionsDrain to source voltageVDSS1500VGate to source

Product OverviewThe RU8205C6 is a N-Channel Advanced Power MOSFET featuring a super high dense cell design for low RDS(ON) and reliable performance. It is available in lead-free and green devices (RoHS compliant) and is suitable for power management applications.Product AttributesBrand: Ruichips Semiconductor Co., LtdCertifications: RoHS CompliantTechnical SpecificationsParameterConditionMin.Typ.Max.UnitElectrical CharacteristicsDrain-Source Breakdown Voltage (BVDSS)VGS=0V,

Renesas RJK0851DPB - 80V, 20A Silicon N Channel Power MOS FETThe Renesas RJK0851DPB is a high-performance Silicon N Channel Power MOS FET designed for power switching applications. It features high-speed switching, low on-resistance, and is capable of 4.5V gate drive with low drive current. Its compact LFPAK package (PTZZ0005DA-A) allows for high-density mounting. This product is Pb-free and Halogen-free, making it suitable for environmentally conscious designs.Product

Product OverviewThe NP100P04PDG is a P-channel MOS Field Effect Transistor designed for high current switching applications. It offers super low on-state resistance and low input capacitance, making it suitable for automotive applications and is AEC-Q101 qualified. This product is Pb-free.Product AttributesBrand: Renesas ElectronicsCertifications: AEC-Q101 qualifiedMaterial: Pb-free (external electrode)Technical SpecificationsItemSymbolMinTypMaxUnitTest ConditionsDrain to

Product Overview The SP60N06HTH is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching, low gate charge, and low RDS(on) for optimal performance. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for demanding applications such as DC-DC converters and load switching. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 60N06H Package:

Product OverviewThe TP65H150BG4JSG is a 650V, 150m Gallium Nitride (GaN) FET, a normally-off device utilizing Renesas's Gen IV platform. It integrates a high-voltage GaN HEMT with a low-voltage silicon MOSFET for enhanced reliability and performance. The Gen IV SuperGaN platform leverages advanced epitaxy and patented design technologies to improve manufacturability and efficiency over silicon by reducing gate charge, output capacitance, crossover loss, and reverse recovery

Product Overview The SP30N02NK is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds and a surface mount PDFN5X6-8L package. This RoHS Compliant & Halogen-Free component is 100% Single Pulse avalanche energy Tested, making it suitable for demanding applications such as DC-DC converters and motor control. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code:

Product OverviewThis P-channel MOS Field Effect Transistor, the NP50P06KDG, is designed for high current switching applications, particularly in the automotive sector. It features super low on-state resistance and low input capacitance, making it suitable for demanding automotive applications. The product is AEC-Q101 qualified and Pb-free.Product AttributesBrand: Renesas ElectronicsCertifications: AEC-Q101 qualifiedMaterial: Pb-free (external electrode)Technical Specification

Product Overview The SP30P08NJ is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for applications requiring fast switching speeds and low on-resistance, this MOSFET features 100% single pulse avalanche energy testing. It is suitable for DC-DC converters and power management applications. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP30P08NJ Technology: P-Channel MOSFET Package: PDFN3X3-8L Device Code: 30P08

Product Overview The SP52N120CTK is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high-speed switching with low capacitances, high blocking voltage with low RDS(on), and is designed for easy paralleling and simple driving. It is RoHS compliant and suitable for a wide range of power electronics applications including Power Factor Correction Modules, Switch Mode Power Supplies, Photovoltaic Inverters, UPS Power Supplies,

Product OverviewThe TP65H150G4PS is a 650V, 150m Gallium Nitride (GaN) FET in a TO-220 package, featuring a normally-off, cascode device structure. It combines advanced high-voltage GaN HEMT and low-voltage silicon MOSFET technologies for superior reliability and performance. Leveraging the Gen IV SuperGaN platform, it offers improved efficiency through lower gate charge, output capacitance, crossover loss, and reverse recovery charge compared to silicon. This FET is designed

Product OverviewThe RU75N08 is an N-Channel Advanced Power MOSFET designed for switching applications. It features ultra-low on-resistance, exceptional dv/dt capability, fast switching, and is fully avalanche rated. With a 175C operating temperature and lead-free/green availability, it is suitable for various switching application systems.Product AttributesBrand: Ruichips SemiconductorOrigin: CHINACertifications: Green & Lead Free AvailableTechnical SpecificationsModelParamet

Product Overview The SP30N02AGTH is a 30V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for battery management and uninterruptible power supply systems. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd.

Product OverviewThe RU40120S is an N-Channel Advanced Power MOSFET from Ruichips Semiconductor, designed for high-efficiency power applications. It features a Super High Dense Cell Design, ultra-low on-resistance (RDS(ON) = 3.5m Typ. @ VGS=10V), and 100% avalanche tested. This device is suitable for DC-DC converters and other power management solutions. Lead Free and Green Devices are available (RoHS Compliant).Product AttributesBrand: Ruichips Semiconductor Co., LtdModel:

UJ4SC075011K4S: 750V, 11m G4 SiC FET Product Overview The UJ4SC075011K4S is a 750V, 11m G4 Silicon Carbide (SiC) FET. It utilizes a unique cascode circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET device. This design offers standard gate-drive characteristics, making it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in the TO-247-4L package, this FET features ultra-low

Product Overview The SP010N02GHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, DC-DC converters, and power management systems. This MOSFET has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP010N02GHTO Channel Type: N-Channel Technology: