Single FETs, MOSFETs

Product Overview The SG2M021120LH is a 1200V Silicon Carbide (SiC) Power MOSFET from Qingchun Semiconductor (Ningbo) Co., Ltd. This N-channel enhancement mode MOSFET offers high-speed switching, very low switching losses, and fully controllable dv/dt. It features high blocking voltage with low on-resistance, a fast intrinsic diode with low reverse recovery charge (Qrr), and temperature-independent turn-off switching losses. Designed for efficiency and increased power density,

Product OverviewThe RJK0652DPB is a 60V, 35A Silicon N Channel Power MOS FET designed for high-speed switching applications. It features low on-resistance, low drive current, and is capable of 4.5V gate drive, making it suitable for high-density mounting. This Pb-free and halogen-free component is ideal for Switching Mode Power Supply applications.Product AttributesBrand: RENESASCertifications: Pb-free, Halogen-freeTechnical SpecificationsItemSymbolMinTypMaxUnitTest

Product OverviewThis P-channel Power MOS FET is designed for high current switching applications, offering super low on-state resistance and low input capacitance. It is specifically designed for automotive applications and is AEC-Q101 qualified. The product is Pb-free, meaning it does not contain lead in its external electrodes.Product AttributesBrand: Renesas Electronics (implied by copyright and notice)Certifications: AEC-Q101 qualifiedMaterial: Pb-free (external electrode

RJK0651DPB 60V, 25A, 14m max. Silicon N Channel Power MOS FET The RJK0651DPB is a high-speed switching Silicon N Channel Power MOS FET designed for power switching applications. It features a low on-resistance, capable of 4.5V gate drive, and low drive current, making it suitable for high-density mounting. This product is Pb-free and halogen-free, ideal for Switching Mode Power Supply applications. Product Attributes Brand: RENESAS Certifications: Pb-free, Halogen-free

Product Overview The SP40N01GTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for PWM applications, hard switched, and high-frequency circuits, as well as power management solutions. It features 100% single pulse avalanche energy testing for enhanced reliability. Product Attributes Brand: Siliup Semiconductor

Product OverviewThe RU30D20M3 is a Dual N-Channel Advanced Power MOSFET designed for switching applications. It features Ruichips' advanced TrenchTM technology, offering excellent QgxRDS(on) product (FOM), reliability, and ruggedness. This device is 100% avalanche tested and available in lead-free and green (RoHS compliant) versions. Ideal for on-board power in servers and synchronous rectification.Product AttributesBrand: RuichipsOrigin: Shenzhen City Ruichips Semiconductor

Product OverviewThe RU7080S is an N-Channel Advanced Power MOSFET designed for high-performance applications. It features ultra-low on-resistance, fast switching speeds, and a high operating temperature of 175C, making it suitable for demanding environments. This device is 100% avalanche tested and available in lead-free and green (RoHS compliant) options.Product AttributesBrand: Ruichips SemiconductorOrigin: Shenzhen CityCertifications: RoHS Compliant (Lead Free and Green

Product OverviewThis Silicon Carbide Power MOSFET features high breakdown voltage and low on-resistance, enabling high switching speeds and low capacitance. It includes a fast-recovery body diode with low reverse recovery charge. Designed for enhanced system efficiency, reduced thermal requirements, and improved power density, this component is ideal for applications requiring high switching frequencies and parallel operation. It is halogen-free and compliant with standards

Product Overview The SP010N02LGHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance applications. It features fast switching, low gate charge, and low Rdson, enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management systems. Product Attributes Brand:

Product Overview The SP010N07AGNK is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is designed for power switching applications, battery management, and uninterruptible power supplies. It has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product

Product OverviewThe RU30C8H is a complementary advanced power MOSFET featuring N-Channel and P-Channel devices. It offers reliable and rugged performance with ESD protection, making it suitable for load switch applications. Available in lead-free and green (RoHS compliant) versions.Product AttributesBrand: Ruichips Semiconductor Co., LtdCertifications: RoHS CompliantTechnical SpecificationsParameterUnitN-Channel Test ConditionP-Channel Test ConditionMin.Typ.Max.Absolute

RU8205G N-Channel Advanced Power MOSFETThe RU8205G is a N-Channel Advanced Power MOSFET designed for power management applications. It features a Super High Dense Cell Design for enhanced performance, offering reliable and rugged operation. This MOSFET is available in lead-free and green options.Product AttributesBrand: Ruichips SemiconductorModel: RU8205GType: N-Channel Advanced Power MOSFETPackage: TSSOP-8Certifications: Lead Free and Green AvailableTechnical Specifications

Product OverviewThe PJM05DP20DFA is a Dual P-Channel Enhancement Mode Power MOSFET designed for high-performance applications. It features low gate charge and a high-density cell design for ultra-low RDS(on), making it suitable for PWM applications, load switching, and power management. This device offers VDS of -20V and ID of -4.5A with RDS(on) as low as 45m at VGS = -4.5V.Product AttributesBrand: PingJingSemiModel: PJM05DP20DFAPackage: DFN2x2A-6LMarking Code: 05DP20Revision

Product Overview The S1M007120PD is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, high blocking voltage with low on-resistance, and temperature-independent turn-off switching losses. This MOSFET is halogen-free and RoHS compliant, contributing to reduced cooling effort, improved efficiency, increased power density, and higher system switching frequencies. Key applications include EV motor drives

Product OverviewThe PJM2306NSA is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features fast switching, low gate charge, and low RDS(on), making it suitable for applications like PWM, load switching, and power management. The device comes in a compact SOT-23 package.Product AttributesBrand: PingJingSemiPackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionMin.Typ.Max.UnitAbsolute Maximum RatingsDrain-Source VoltageVDS30V

Product OverviewThe PJM2300NSA-L is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management. It offers excellent RDS(ON) and low gate charge, making it suitable for applications such as DC/DC converters and load switches for portable devices. This MOSFET is packaged in a SOT-23 package.Product AttributesBrand: PingJingSemiOrigin: Not SpecifiedMaterial: Not SpecifiedColor: Not SpecifiedCertifications: Not SpecifiedTechnical SpecificationsParameterSym

Product OverviewThe NP36P06KDG is a P-channel MOS Field Effect Transistor designed for high current switching applications. It offers super low on-state resistance and low input capacitance, making it suitable for automotive applications and is AEC-Q101 qualified. This product is Pb-free, meaning it does not contain lead in the external electrode.Product AttributesBrand: Renesas ElectronicsCertifications: AEC-Q101 qualifiedMaterial: Pb-free (external electrode)Application:

Product OverviewThe PJMG10H25NDL is an N-Channel Enhancement Mode Power MOSFET designed for load switching, PWM applications, and power management. It features advanced Split Gate Trench Technology, 100% avalanche testing, and is RoHS compliant, halogen and antimony free. This MOSFET offers a VDS of 100V and a continuous ID of 24A with low RDS(on) values.Product AttributesBrand: PingJingSemiModel: PJMG10H25NDLTechnology: Advanced Split Gate TrenchCertifications: RoHS

2SJ598 SWITCHING P-CHANNEL POWER MOS FET The 2SJ598 is a P-channel MOS Field Effect Transistor designed for solenoid, motor, and lamp driver applications. It offers low on-state resistance and low input capacitance, with a built-in gate protection diode for enhanced reliability. This device is available in TO-251/TO-252 packages. Product Attributes Brand: Renesas Electronics Product Type: P-CHANNEL POWER MOS FET Package: TO-251 (MP-3), TO-252 (MP-3Z) Technical Specifications

Product OverviewThe TP65H050G4WS is a 650V, 50 m gallium nitride (GaN) FET utilizing Renesas's Gen IV platform. This normally-off device integrates a high-voltage GaN HEMT with a low-voltage silicon MOSFET, offering enhanced reliability and performance. Leveraging advanced epi and patented design technologies, the Gen IV SuperGaN platform improves efficiency over silicon by reducing gate charge, output capacitance, crossover loss, and reverse recovery charge. It enables high