Single FETs, MOSFETs

Product OverviewThe TP65H050G4WS is a 650V, 50 m gallium nitride (GaN) FET utilizing Renesas's Gen IV platform. This normally-off device integrates a high-voltage GaN HEMT with a low-voltage silicon MOSFET, offering enhanced reliability and performance. Leveraging advanced epi and patented design technologies, the Gen IV SuperGaN platform improves efficiency over silicon by reducing gate charge, output capacitance, crossover loss, and reverse recovery charge. It enables high

Product OverviewThe TP65H300G4LSGB is a 650V, 240m Gallium Nitride (GaN) FET, utilizing Renesass Gen IV platform. This normally-off device integrates a high-voltage GaN HEMT with a low-voltage silicon MOSFET, offering enhanced reliability and performance. The Gen IV SuperGaN platform employs advanced epitaxy and patented design technologies to simplify manufacturing and improve efficiency over silicon by reducing gate charge, output capacitance, crossover loss, and reverse

Product OverviewThe PJM20N60TE is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management applications. Featuring advanced trench technology, it offers excellent performance with low on-resistance and high avalanche energy. This RoHS and Reach compliant component is halogen and antimony free, making it suitable for load switching and PWM applications.Product AttributesBrand: PingjingsemiCertifications: RoHS, Reach CompliantMaterial: Halogen and

Product OverviewThe TP65H070G4LSGB is a 650V, 72m Gallium Nitride (GaN) FET, designed as a normally-off device. It integrates advanced high voltage GaN HEMT and low voltage silicon MOSFET technologies to deliver superior reliability and performance. Leveraging the Gen IV SuperGaN platform, it utilizes advanced epi and patented design technologies to simplify manufacturing and enhance efficiency over silicon by reducing gate charge, output capacitance, crossover loss, and

Product OverviewThe PJM20H02ANSC is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for synchronous buck converter applications and offers advantages such as being Halogen and Antimony Free. This MOSFET is rated for VDS= 200V and ID= 2A, with a low RDS(on) of < 1.9 @VGS= 10V.Product AttributesBrand: PingJingSemi (implied by www.pingjingsemi.com)Certifications: Halogen and Antimony FreeTechnical SpecificationsParameterSymbolTest

Product OverviewThe PTP10N40B and PTA10N40B are 400V N-Channel MOSFETs featuring proprietary new planar technology. They offer low gate charge for minimized switching loss and a fast recovery body diode. These MOSFETs are suitable for applications such as ballasts, lighting, DC-AC inverters, and other general applications.Product AttributesBrand: PIPOrigin: Perfect Intelligent Power Semiconductor Co., Ltd.Technical SpecificationsPart NumberPackageDrain-to-Source Voltage (VDSS

Product Overview The UJ4C075018K3S is a 750V, 18mW G4 SiC FET designed for high-efficiency power conversion. This device utilizes a unique cascode circuit configuration, integrating a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET. Its standard gate-drive characteristics enable seamless integration as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. The UJ4C075018K3S excels in applications requiring low gate

Product OverviewThe PJM6801DPSG is a Dual P-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features excellent RDS(on) and low gate charge, making it suitable for load switching and PWM applications. This MOSFET offers robust performance with a VDS of -30V and continuous ID of -4.1A.Product AttributesBrand: Pingjing SemiconductorOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical Specificatio

Product DescriptionThe TP65H035G4WS is a 650V, 35 m gallium nitride (GaN) FET utilizing Renesass Gen IV platform. This normally-off device integrates a high-voltage GaN HEMT with a low-voltage silicon MOSFET, delivering superior reliability and performance. The Gen IV SuperGaN platform leverages advanced epitaxy and patented design technologies to simplify manufacturing while enhancing efficiency over silicon by reducing gate charge, output capacitance, crossover loss, and

Product OverviewThe NP100P06PDG is a P-channel MOS Field Effect Transistor designed for high current switching applications. It offers super low on-state resistance and low input capacitance, making it suitable for automotive applications and is AEC-Q101 qualified. This Pb-free product does not contain lead in the external electrode.Product AttributesBrand: Renesas ElectronicsCertifications: AEC-Q101 qualifiedMaterial: Pb-free (no Pb in the external electrode)Application:

Product OverviewThe PJM3400NSQ is an N-Channel Enhancement Mode Power MOSFET designed for load switching and PWM applications. It offers high power and current handling capability with low gate charge and RDS(on). This MOSFET is ideal for power management solutions.Product AttributesBrand: PingJingSemiOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMin.Typ.Max.UnitDrain-Source

Product OverviewThe PPJA3404-AU is a 30V N-Channel Enhancement Mode MOSFET designed for switch load and PWM applications. It features advanced Trench Process Technology, offering low RDS(ON) at various gate-source voltages and drain currents. This AEC-Q101 qualified component is lead-free and manufactured with a green molding compound, complying with EU RoHS directives.Product AttributesBrand: Panjit International Inc.Certifications: TS16949, AEC-Q101 qualified, EU RoHS 2011

Product OverviewThe PJM80N68TE is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It offers high performance with a VDS of 68V and ID of 80A, and a low RDS(on) of less than 8.6m at VGS=10V. This RoHS compliant and Halogen/Antimony free component is ideal for load switching, PWM applications, and power management.Product AttributesBrand: PingJingSemiCertifications: RoHS Compliant, Halogen and Antimony FreeMoisture Sensitivity Level: 3Technical

Product OverviewThe PJM60N60TE is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It offers 100% avalanche testing, RoHS compliance, and is halogen and antimony-free. This MOSFET is designed for load switching, PWM applications, and power management, providing a VDS of 60V and a continuous ID of 60A with low on-resistance.Product AttributesBrand: PJMCertifications: RoHS Compliant, Halogen and Antimony FreeMoisture Sensitivity Level: 3Technical

Product OverviewThe PJM03P40SA is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is RoHS and Reach Compliant, and Halogen and Antimony Free. This MOSFET is ideal for load switch, PWM applications, and power management. Key specifications include VDS of -40V, ID of -3A, and low RDS(on) of < 138m @VGS= -10V and < 175m @VGS= -4.5V.Product AttributesBrand: PingJingSemiPackage Type: SOT-23Certifications: RoHS and Reach Compliant, Halogen and

Product OverviewThe RU6080L is an N-Channel Advanced Power MOSFET from Ruichips Semiconductor. It features a 60V/80A rating with a low on-state resistance of 7m (Typ.) at VGS=10V. Designed with a super high dense cell structure, this MOSFET is 100% avalanche tested and available in lead-free and green devices (RoHS Compliant). It is ideal for applications requiring high-speed power switching, such as Switched-Mode Power Supplies (SMPS).Product AttributesBrand: Ruichips

Product Overview The UJ4C075033K3S is a 750V, 33mW G4 Silicon Carbide (SiC) FET, featuring a unique cascode circuit configuration that combines a normally-on SiC JFET with a Si MOSFET to create a normally-off device. This design offers standard gate-drive characteristics, making it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in a TO-247-3L package, it boasts ultra-low gate charge (QG = 37.8nC), exceptional reverse recovery

Product OverviewThe PJM07DN30PA is a Dual N-Channel Enhancement Mode Power MOSFET designed for load switching, PWM applications, and power management. It features advanced trench technology, 100% avalanche tested, and is RoHS and Reach compliant, as well as Halogen and Antimony Free. This MOSFET offers low on-resistance and is suitable for various power electronic applications.Product AttributesBrand: PingJingSemiMarking Code: 07DN30Package: SOP-8Certifications: RoHS and

Product OverviewThe PJM03DN20DFA is a Dual N-Channel Enhancement Mode Power MOSFET designed for efficient switching applications. It features low On-Resistance (RDS(ON)) and comes in a small surface mount package, making it suitable for compact electronic designs. With a VDS of 20V and ID of 3.6A, it offers a maximum RDS(on) of 45m at VGS=10V. This MOSFET is ideal for use in DC/DC converters and other switching circuits.Product AttributesBrand: PJM (implied by product code

Product OverviewThe PJM03N10SQ is an N-Channel Enhancement Mode Power MOSFET designed for efficient power switching. It features fast switching speeds, low reverse transfer capacitance, and low gate charge, making it suitable for load switching and PWM applications. With a VDS of 100V and ID of 3A, it offers low RDS(on) for improved performance.Product AttributesBrand: PJMOrigin: Pingjing Semiconductor (implied by URL)Type: N-Channel Enhancement Mode Power MOSFETTechnical