Single IGBTs

Product OverviewThe MCF450N120S2E3 module from JIANGSUCHANGJING ELECTRONICS TECHNOLOGY CO., LTD features advanced Trench and FS (Field Stop) IGBT technology, offering very low Collector-Emitter Saturation Voltage for ease of use in drives and inverters. It boasts high short circuit capability, low switching loss, and high reliability. This module is suitable for applications such as Solar Inverters, Uninterrupted Power Supplies, Servo Drivers, and Motor Drivers.Product

Product OverviewThe JIANGSUCHANGJING ELECTRONICS TECHNOLOGY CO., LTD MCF600N120S2E3 module features advanced Trench and FS (Field Stop) IGBT technology, offering very low Collector-Emitter Saturation Voltage. It is designed for ease of use in drives and inverters, providing high reliability, high short circuit capability, and low switching loss. Applications include Solar Inverters, Uninterrupted Power Supplies, Servo Drivers, and Motor Drivers.Product AttributesBrand:

JNG15T65FJS1 IGBT Module The JNG15T65FJS1 is a 650V, 15A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency motor control and general inverter applications. It offers high ruggedness performance with a 10s short circuit capability and excellent current sharing for parallel operation. Key features include a typical VCE(sat) of 1.6V at VGE=15V and IC=15A. Product Attributes Brand: JIAEN Semiconductor Co., Ltd Product Code: JNG15T65FJS1 Package Type: TO-220F

Product Overview JIAEN Trench IGBTs offer lower losses and higher energy efficiency, making them ideal for applications such as UPS, Induction converters, Uninterruptible power supplies, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA. Product Attributes Brand: JIAEN Origin: Not specified Material: Not specified Color: Not specified Certifications: Not specified Technical

Product OverviewThe GL150HF120F1UR1 is a 1200V, 150A IGBT half-bridge module featuring planar field-stop technology for high RBSOA capability and low turn-off losses. It is suitable for applications such as inductive heating, welding, and high-frequency switching.Product AttributesBrand: JIAEN SemiconductorInternal Gate Resistor: 5 Module Baseplate Material: CuInternal Isolation: basic insulation (class 1, IEC 61140)Comparative Tracking Index: >200Technical SpecificationsMode

Product OverviewThe JIAEN GN200HF120T3SS1 is a 1200V, 200A Trench FS IGBT Half-bridge module designed for general inverter and soft switching applications. It offers lower losses and higher energy efficiency, making it suitable for motor drives, AC/DC servo drive amplifiers, and power supplies. Key features include a typical VCE(sat) of 1.6V, soft turn-off capability, a positive VCE(on) temperature coefficient, and ease of paralleling.Product AttributesBrand: JIAENModel:

Product OverviewThe JIAEN JNG15T65HS1 is a 650V, 15A Trench IGBT designed for applications requiring lower losses and higher energy efficiency. It features high-speed switching, soft current turn-off waveforms, and a square RBSOA. Ideal for motor control, general inverters, and other soft switching applications.Product AttributesBrand: JIAENProduct Series: JNG15T65HS1Technical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitsCollector-Emitter VoltageVCES650VGate

Product OverviewThe JNG50T65HMU1 is a Trench IGBT from JIAEN Semiconductor designed to reduce conduction loss, improve switching performance, and enhance avalanche energy. It features high speed switching, a positive temperature coefficient, and a reliable, rugged design with low VCE(sat). This IGBT is suitable for applications such as motor drives, UPS, Boost converters, portable power stations, and other soft switching applications.Product AttributesBrand: JIAENOrigin: www

Product OverviewThe JNG40T65HMU1 from JIAEN is a Trench IGBT designed to reduce conduction loss, improve switching performance, and enhance avalanche energy. Its features include high-speed switching, a positive temperature coefficient, and a reliable, rugged design with low VCE(sat). This IGBT is suitable for motor drives, solar inverters, resonant converters, and other soft switching applications.Product AttributesBrand: JIAENModel: JNG40T65HMU1Technical SpecificationsParam

Product OverviewThe JIAEN JNG50T65HJU1 is a Trench IGBT designed for applications requiring high efficiency and lower losses. It offers soft current turn-off waveforms and a square RBSOA, making it suitable for soft switching applications.Product AttributesBrand: JIAEN Semiconductor Co., LtdOrigin: www.jiaensemi.comTechnical SpecificationsSymbolParameterTest ConditionsMin.Typ.Max.UnitsVCESCollector-Emitter Voltage650VVGESGate-Emitter Voltage+20VICContinuous Collector Current(

Product OverviewThe JT015N065FED is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for general-purpose inverters and UPS power supplies. It features low gate charge, Trench FS Technology, and a typical saturation voltage of 1.6V at 15A and 25C. This RoHS-compliant product is available in a TO-220MF package.Product AttributesBrand: Jilin Sino-microelectronics Co., LtdOrigin: ChinaMaterial: N-channel IGBTColor: Not specifiedCertifications: RoHSHalogen Free:

JNG25N120AI IGBTJIAEN NPT IGBTs offer lower losses and higher energy efficiency for applications such as IH (induction heating), UPS, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA using NPT technology.Product AttributesBrand: JIAENTechnology: NPT IGBTTechnical SpecificationsParameterConditionValueUnitCollector-Emitter Voltage (VCES)1200VGate-Emitter

Product OverviewThe JNG60T65HS1 Trench IGBT from JIAEN Semiconductor offers advanced performance for various power electronic applications. It features high speed switching, higher system efficiency, and soft current turn-off waveforms, making it ideal for motor control, general inverters, and other soft-switching applications. The device boasts a 650V voltage rating and a 60A continuous collector current, with a typical saturation voltage of 2.1V.Product AttributesBrand:

JNG75T120LCS1 IGBT The JNG75T120LCS1 is a 1200V, 75A Trench IGBT from JIAEN Semiconductor, designed for high-speed switching applications. It offers lower losses and higher energy efficiency, making it suitable for motor control, general inverters, and other soft-switching applications. Key features include a typical VCE(sat) of 1.65V, soft current turn-off waveforms, and a square RBSOA. Product Attributes Brand: JIAEN Product Code: JNG75T120LCS1 Package: TO-264 Technical

Product OverviewThe GL100HF120F1UR1 is a 1200V, 100A IGBT half-bridge module featuring planar field-stop technology, high RBSOA capability, and low turn-off losses. It is designed for applications such as inductive heating, welding, and high-frequency switching.Product AttributesBrand: JIAEN SemiconductorOrigin: Not specifiedMaterial: Al2O3 (Module Baseplate)Color: Not specifiedCertifications: basic insulation (class 1, IEC 61140)Technical SpecificationsParameterIGBT Maximum

Product OverviewThe JIAEN GL150HF120T1SZ1 is a 1200V, 150A Trench FS IGBT half-bridge module designed for general inverter and soft switching applications. It offers lower losses and higher energy efficiency, making it suitable for motor drives, AC/DC servo drive amplifiers, and power supplies. Key features include a typical VCE(sat) of 1.6V, soft turn-off capability, a positive VCE(on) temperature coefficient, and ease of paralleling.Product AttributesBrand: JIAENOrigin: www

Product Description The EconoPIM3 module features the 7th generation TRENCHSTOP IGBT7 and the 7th generation Emitter Controlled Diode with integrated NTC temperature sensing. It is designed for applications requiring high performance and reliability, offering advantages such as low VCEsat and overload operation up to 175C. The module utilizes a copper base plate and an Al2O3 substrate for low thermal resistance. It is suitable for auxiliary inverters, motor drives, and servo

Product Overview The FP10R12W1T4 is an EasyPIM IGBT module featuring fourth-generation Trench/Fieldstop IGBT4 and an emitter-controlled 4 diode with NTC temperature detection. It offers low switching losses, a positive temperature coefficient for VCEsat, and a low VCEsat. The module boasts a compact design with an Al2O3 substrate for low thermal resistance and robust mounting via integrated clamps. Suitable for auxiliary inverters, air conditioning, and motor drives. Product

Product DescriptionThe IKQ75N120CH3 is a high-speed switching IGBT from Infineon's third-generation series, featuring Highspeed3 technology for enhanced efficiency in hard switching and resonant topologies. It offers a 10sec short circuit withstand time at 175C, easy paralleling due to a positive temperature coefficient in VCEsat, low EMI, and low Gate Charge (QG). The device is copacked with a soft, fast recovery full current rated anti-parallel Emitter Controlled diode. It

Product OverviewThe 62mm C-Series module features a fast IGBT2 for high-frequency switching applications. This IGBT module is designed for inverter use, offering high performance and reliability.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: EN61140 (for basic insulation)Technical SpecificationsParameterValueUnitConditionsIGBT, Inverter - Maximum Rated ValuesCollector-emitter voltage (VCES)1200VTvj =