Single IGBTs
Industrial power igbt Infineon IKWH60N65WR6 with low temperature dependence of switching parameters
Product OverviewThe TRENCHSTOP 5 WR6 technology in an enhanced creepage and clearance package offers improved reliability against package contamination. This product is designed for high-voltage applications, featuring a monolithic diode optimized for PFC and welding applications. It provides stable temperature behavior, very low VCEsat, low Eoff, and easy paralleling capability due to its positive temperature coefficient in VCEsat. The product exhibits low temperature
600V 10A IGBT Module with Short Circuit Withstand Time and Low Gate Charge Infineon IKP10N60T
Product OverviewThe IKP10N60T is a Low Loss DuoPack featuring IGBT in TRENCHSTOP and Fieldstop technology with a soft, fast recovery anti-parallel Emitter Controlled HE diode. It offers very low VCE(sat) of 1.5V (typ.), a maximum junction temperature of 175C, and a short circuit withstand time of 5s. Designed for variable speed drives in washing machines, air conditioners, and induction cooking, as well as Uninterrupted Power Supplies, its TRENCHSTOP and Fieldstop technology
IGBT with 650V Breakdown Voltage and RAPID 1 Diode Infineon IKP08N65F5 Using TRENCHSTOP 5 Technology
Product OverviewThe IKP08N65F5 is a high-speed 5th generation FAST IGBT from Infineon, featuring TRENCHSTOPTM 5 technology. It is copacked with a RAPID 1 fast and soft antiparallel diode, offering best-in-class efficiency in hard switching and resonant topologies. With a 650V breakdown voltage and low QG, this DuoPack IGBT is designed for high-speed switching applications and is qualified according to JEDEC standards. It supports a maximum junction temperature of 175C and is
EconoPACK2 IGBT module Infineon FS75R12KT4B15 featuring integrated NTC sensor and low VCEsat voltage
Product OverviewThe FS75R12KT4_B15 is an EconoPACK2 IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technology. It offers low VCEsat, high thermal cycling capability, and an integrated NTC temperature sensor, making it suitable for applications such as auxiliary inverters, motor drives, and servo drives.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Al2O3 Substrate, Copper Base PlateCertifications: UL approved (E83335
High speed switching Infineon IKA08N65F5 IGBT with soft antiparallel diode and RoHS compliant design
Product OverviewThe IKA08N65F5 is a high-speed 5th generation FAST IGBT from Infineon, featuring TRENCHSTOPTM 5 technology and copacked with a RAPID 1 fast and soft antiparallel diode. This DuoPack offers best-in-class efficiency in hard switching and resonant topologies, a 650V breakdown voltage, and low QG. It is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant. The device is suitable for applications requiring high-speed switching
power module Infineon FZ600R17KE3 with Trench Fieldstop IGBT3 and emitter controlled diode technology
Product OverviewThe FZ600R17KE3 is a 62mm C-Series IGBT module featuring Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode technology. It offers low switching losses, low VCEsat, high robustness, and a positive temperature coefficient for VCEsat. This module is designed for high-power converter, motor drive, and wind turbine applications.Product AttributesUL Approved (E83335)Package with CTI > 400High Creepage and Clearance DistancesIsolated Base PlateStandard HousingTech
Industrial grade Infineon IKWH30N65WR6 with trenchstop 5 WR6 and enhanced creepage clearance package
Product OverviewThe TRENCHSTOP 5 WR6 technology in an enhanced creepage and clearance package offers improved reliability against package contamination. This product is designed for demanding applications such as PFC and welding, featuring a monolithic diode optimized for these uses. It provides stable temperature behavior, very low VCEsat and Eoff, and easy parallel switching capability due to the positive temperature coefficient of VCEsat. The low temperature dependence of
Power switching device Infineon IKW30N65ES5 with 1.35 volt VCEsat and 650 volt maximum voltage rating
Product OverviewThe Infineon TRENCHSTOPTM 5 IKW30N65ES5 is a high-speed, soft-switching IGBT designed for demanding industrial applications. It features S5 technology for smooth switching, a low VCEsat of 1.35V, and a 650V breakdown voltage. This device is copacked with a full current-rated RAPID 1 fast and soft antiparallel diode, offering a plug-and-play replacement for previous generations. It is qualified according to JEDEC standards and is RoHS compliant.Product
IGBT 650V 20A transistor JIAENSEMI JNG20T65FJS1 suitable for motor control and inverter applications
IGBT 650V, 20A This IGBT offers high ruggedness performance with a 10s short circuit capability, making it ideal for applications requiring high efficiency in motor control and excellent current sharing in parallel operation. It is designed for use in home appliances, motor drives, and general inverter systems. Product Attributes Brand: JIAEN Semiconductor Co., Ltd Origin: Not specified Material: Not specified Color: Not specified Certifications: Not specified Technical
Trench IGBT JIAENSEMI JNG25T65KS1 25A 650V Featuring Soft Current Turn Off for Inverter Applications
Product OverviewThe JIAEN JNG25T65KS1 is a Trench IGBT designed for lower losses and higher energy efficiency. It features 650V, 25A ratings, high-speed switching, soft current turn-off waveforms, and a square RBSOA. This IGBT is suitable for applications such as motor control, general inverters, and other soft switching applications.Product AttributesBrand: JIAENModel: JNG25T65KS1Technical SpecificationsParameterSymbolConditionsMin.Typ.Max.UnitsAbsolute Maximum RatingsCollec
IGBT Module Infineon FS50R12KT3 EconoPACK2 1200 Volt 50 Amp Collector Emitter Current
Product OverviewThe EconoPACK2 module features a fast trench/fieldstop IGBT3 and an Emitter Controlled High Efficiency diode, designed for inverter applications. It offers high performance and efficiency in a compact module format.Product AttributesBrand: EconoPACK2Model: FS50R12KT3Type: IGBT ModulePreparation Date: 2013-10-03Revision: 2.1Data Status: Preliminary DataTechnical SpecificationsParameterUnitIGBT, InverterDiode, InverterModuleNTC ThermistorCollector-emitter
industrial module Infineon FF450R12KE7HPSA1 with TRENCHSTOPIGBT7 technology and high creepage clearance
Product OverviewThe 62 mm C-Series module, model FF450R12KE7, features TRENCHSTOPIGBT7 technology with an emitter controlled 7 diode. It offers high power density, a 1200 V collector-emitter voltage, and a nominal collector current of 450 A (ICRM 900 A). This module is designed with excellent electrical and mechanical features, including positive temperature coefficient for VCE,sat and high creepage/clearance distances, making it suitable for demanding industrial applications
Power module Infineon FF500R17KE4 designed for high current and voltage applications in motor drives
Product OverviewThe FF500R17KE4 is a 62mm C-Series IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 3 diodes. It offers enhanced operating temperature, low VCEsat, and exceptional robustness. Ideal for high-power converters, motor drives, UPS systems, and wind turbines.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Cu (baseplate), Al2O3 (internal isolation)Color: Not specifiedCertifications: CE, UL (E83335)Technical SpecificationsParam
IGBT 7 module Infineon IKW30N65ET7 featuring low VCE saturation and short tail current for switching
Product OverviewThe IKW30N65ET7 is a low-loss IGBT 7 module featuring Trench and Fieldstop technology. It offers a high collector-emitter voltage of 650 V and a continuous collector current of 30 A. Key advantages include very low VCE,sat, low turn-off losses, short tail current, and reduced EMI. It is equipped with a very soft, fast recovery antiparallel diode and supports a maximum junction temperature of 175C. This product is qualified according to JEDEC standards for
Industrial power control IGBT Infineon IHW15N120E1 resonant soft switching reverse conducting device
Product OverviewThe IHW15N120E1 is a Resonant Soft-Switching Series Reverse conducting IGBT with a monolithic body diode, designed for soft commutation applications. It features TRENCHSTOPTM technology for tight parameter distribution, high ruggedness, and easy parallel switching. This IGBT is Pb-free and RoHS compliant, suitable for industrial power control applications.Product AttributesBrand: InfineonTechnology: TRENCHSTOPTMCertifications: JEDEC, RoHS compliantLead Plating
TrenchStop Series Power Semiconductor Infineon IGW25T120 Low Loss IGBT with Short Circuit Protection
IGW25T120 TrenchStop Series Power SemiconductorsThe IGW25T120 is a Low Loss IGBT featuring TrenchStop and Fieldstop technology, designed for high-performance applications. It offers a short circuit withstand time of 10s and is ideal for frequency converters and uninterrupted power supplies. The TrenchStop and Fieldstop technology ensures very tight parameter distribution, high ruggedness, and stable temperature behavior. Its NPT technology facilitates easy parallel switching
switching IGBT JIAENSEMI JNG75T65HMU2 suitable for boost converters UPS and portable power stations
Product OverviewJIAEN Trench IGBTs are designed to reduce conduction loss, improve switching performance, and enhance avalanche energy. They are suitable for applications such as motor drives, UPS, Boost converters, portable power stations, and other soft switching scenarios.Product AttributesBrand: JIAENOrigin: www.jiaensemi.comTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitsIGBT CharacteristicsVCES650VVCE(sat)VGE=15V, IC=75A1.62.0VBVCESVGE=0V, IC
IGBT Device Infineon IHW40N135R5 Featuring Monolithic Body Diode and Low VCEsat for Microwave Ovens
Product OverviewThe IHW40N135R5 is a Resonant Switching Series Reverse Conducting IGBT with a monolithic body diode, designed for soft commutation. It features TRENCHSTOP technology for excellent parameter distribution, high ruggedness, stable temperature behavior, low VCEsat, and easy parallel switching. This IGBT also offers low EMI and is qualified according to JESD-022 for target applications. It is Pb-free, RoHS compliant, and halogen-free.Product AttributesBrand:
Industrial EasyPACK power module Infineon FS100R12W2T7B11 with emitter controlled diode and NTC sensor
Product OverviewThe EasyPACK module with TRENCHSTOPIGBT7 and emitter controlled 7 diode and PressFIT/NTC offers high power density and compact design. It features TRENCHSTOPIGBT7 technology for low VCE,sat and overload operation up to 175C. The PressFIT contact technology ensures efficient mechanical integration. This module is qualified for industrial applications.Product AttributesBrand: InfineonProduct Line: EasyPACKTechnology: TRENCHSTOP IGBT7, emitter controlled 7 diode,
IGBT 1200V 40A JIAENSEMI JNG40T120HP Module Soft Current Turn Off for General Purpose Inverters
Product OverviewJIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as induction heating, UPS, AC & DC motor controls, and general-purpose inverters. The JNG40T120HP features 1200V, 40A capability with a typical VCE(sat) of 1.85V, high-speed switching, and soft current turn-off waveforms, contributing to higher system efficiency.Product AttributesBrand: JIAENModel: JNG40T120HPTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ