Single IGBTs

Product OverviewThe MG12150W-XN2MM is a 1200V 150A IGBT Power Module from Littelfuse, Inc. It features a high level of integration with IGBT3 CHIP (Trench+Field Stop technology), offering low saturation voltage, positive temperature coefficient, fast switching, and short tail current. The module includes free-wheeling diodes with fast and soft reverse recovery, solderable pins for PCB mounting, and integrated temperature sensing. It is designed for applications such as AC

IXYT25N250CHV / IXYH25N250CHV High Voltage XPTTM IGBT The IXYT25N250CHV and IXYH25N250CHV are high voltage XPTTM IGBTs designed for high power density applications. They offer high blocking voltage, high peak current capability, and low saturation voltage, with advantages such as low gate drive requirement. These IGBTs are suitable for switch-mode and resonant-mode power supplies, uninterruptible power supplies (UPS), laser generators, capacitor discharge circuits, and AC

Product OverviewThe NGB8202AN is a Logic Level Insulated Gate Bipolar Transistor (IGBT) designed for ignition systems, particularly in Coil-on-Plug and Driver-on-Coil applications. It features monolithic circuitry with integrated ESD and Over-Voltage clamped protection, making it suitable for inductive coil driver applications requiring high voltage and high current switching. This device offers gate-emitter ESD protection, temperature-compensated gate-collector voltage clamp

Product OverviewThe NGD18N40ACLB is a Logic Level Insulated Gate Bipolar Transistor (IGBT) designed for inductive coil driver applications. It features monolithic circuitry with integrated ESD and Over-Voltage clamped protection, making it ideal for ignition, direct fuel injection, and other high-voltage, high-current switching requirements. The DPAK package offers a smaller footprint for increased board space.Product AttributesBrand: Littelfuse, Inc.Package: DPAKMaterial:

Product OverviewThe NGB18N40ACLB is a Logic Level Insulated Gate Bipolar Transistor (IGBT) designed for ignition and high-voltage/high-current switching applications. It features monolithic circuitry with integrated ESD and Over-Voltage clamped protection, making it ideal for coil-on-plug systems, direct fuel injection, and similar demanding scenarios. The DPAK package offers a smaller footprint, and the device includes features like gate-emitter ESD protection, temperature

Product OverviewThe NGB8207ABN is a Logic Level Insulated Gate Bipolar Transistor (IGBT) designed for ignition and high voltage/high current switching applications. It features integrated ESD and over-voltage clamped protection, making it ideal for Coil-on-Plug and Driver-on-Coil applications. Its low threshold voltage allows for interfacing power loads to logic or microprocessor devices, while its low saturation voltage and high pulsed current capability ensure efficient

Littelfuse BiMOSFETTM Monolithic Bipolar MOS Transistor The IXBK55N300 and IXBX55N300 are high voltage, high gain BiMOSFETTM monolithic bipolar MOS transistors designed for applications requiring high blocking voltage and high current handling capability. They offer low conduction losses and MOS gate turn-on for drive simplicity. Key advantages include ease of mounting, space savings, and high power density. These transistors are suitable for Uninterruptible Power Supplies

Product Overview The KIA SEMICONDUCTORS 50N65AI is a 50A, 650V Silicon Power IGBT designed for demanding applications. It features low VCE(sat), fast switching, high ruggedness, and short-circuit rating, making it ideal for solar inverters, uninterrupted power supplies, industrial inductive heating, and energy storage systems. Product Attributes Brand: KIA Model: 50N65AI Package: TO-247 Technology: Silicon Power IGBT Technical Specifications Parameter Symbol Value Unit

Product Overview This is a 40A, 1200V Silicon Power IGBT from KIA SEMICONDUCTORS. It features low VCE(sat) of 1.91V (typ.), fast switching, high ruggedness, and short-circuit rating. Ideal for applications such as Solar Inverters, Uninterrupted Power Supply, Industrial Inductive Heating, and Energy Storage. Product Attributes Brand: KIA Material: Silicon Power IGBT Package: TO-247 Technical Specifications Parameter Symbol Value Unit Ordering Information Part Number KGM40N120A

Product Overview The KIA SEMICONDUCTORS 75N120AI is a 75A, 1200V Silicon Power IGBT designed for high-performance applications. It features a low VCE(sat) of 1.55V (typ.), fast switching capabilities, high ruggedness, and short-circuit rating. This IGBT is ideal for use in solar inverters, uninterrupted power supplies, industrial inductive heating, and energy storage systems. Product Attributes Brand: KIA Part Number: KGM75N120AI Package: TO-247 Technical Specifications

Product OverviewThe 40N65H2 is a 650V, 40A IGBT discrete utilizing CoolWatt@II Trench-FS technology, offering high-speed soft switching. It features a low Vcesat, high junction temperature capability, and robust construction. This IGBT is ideal for applications requiring high switching frequencies, including Power, PV, Industrial welding, and PFC systems. It includes an integrated anti-parallel fast recovery diode.Product AttributesBrand: KTP SemiconductorPart ID: 40N65H2Pack

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Product OverviewThe CGWT40N65F2KAD is a 650V breakdown voltage IGBT from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, featuring low Vce(sat) and a positive temperature coefficient. It offers high-speed switching with low switching loss and a fast/soft recovery freewheeling diode, ensuring good EMI behavior. This device is designed for parallel use due to its advanced Trench and FS (Field Stop) Structure, providing high application frequency and low collector-emitter

Product OverviewThe JIANGSUCHANGJING ELECTRONICS TECHNOLOGY CO., LTD MCF600N170L2E3 module features advanced Trench and FS (Field Stop) IGBT technology, offering very low Collector-Emitter Saturation Voltage for efficient use in drives and inverters. It boasts high short circuit capability, low switching loss, and high reliability. This module is ideal for high power converters, wind turbines, and motor driver applications.Product AttributesBrand: JIANGSUCHANGJING ELECTRONICS

JIANGSUCHANGJING ELECTRONICS TECHNOLOGY CO., LTD MCF450N170L2E3The MCF450N170L2E3 module, featuring JSCJ's advanced Trench and FS (Field Stop) IGBT technology, offers very low Collector-Emitter Saturation Voltage, making it easy to use in drives and inverters. Its key advantages include high short circuit capability, low switching loss, and high reliability, with a positive temperature coefficient. This module is ideally suited for applications such as wind converters, motor

Product OverviewThe CGWT80N65F2KAD is a high-performance IGBT utilizing JSCJ's second-generation Trench and Field Stop (FS) structure technology. It offers high application frequency, low Collector-Emitter Saturation Voltage (Vce(sat)), and low switching loss, making it suitable for parallel operation. Key features include a 650V breakdown voltage, positive temperature coefficient for Vce(sat), high-speed switching, and a fast/soft recovery freewheeling diode for good EMI

Product OverviewThe CGWT40N120F2KAD is a high-performance Insulated Gate Bipolar Transistor (IGBT) from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing their second-generation Trench and Field Stop (FS) structure. It offers a 1200V breakdown voltage, low Vce(sat), and a positive temperature coefficient, leading to low switching losses and good EMI behavior. Designed for parallel use, this IGBT is suitable for demanding applications such as solar power systems,

Product OverviewThe JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CGU06N65F2SA is a 650V IGBT featuring low Vce(sat), high-speed switching, and low switching loss. It incorporates a fast and soft recovery freewheeling diode, offering high short-circuit ruggedness and good EMI behavior. This device is built with JSCJ's second-generation IGBT technology, utilizing an advanced Trench and FS (Field Stop) structure, making it suitable for parallel applications.Product

Product OverviewThe CGU06N65F2SAA is a 650V IGBT from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing JSCJ's second-generation Trench and Field Stop (FS) structure. It offers low Collector-Emitter Saturation Voltage (Vce(sat)), high-speed switching with low switching loss, and good short-circuit ruggedness. This device is suitable for parallel use and features a fast and soft recovery freewheeling diode, making it ideal for motor drivers, home appliance

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CGR75N120F2KADThe CGR75N120F2KAD is a high-performance IGBT utilizing JSCJ's second-generation Trench and Field Stop (FS) structure. It offers a low Collector-Emitter Saturation Voltage (Vce(sat)) and a positive temperature coefficient, making it suitable for parallel applications. Key features include low switching loss, fast and soft recovery freewheeling diode, and good EMI behavior. It is designed for applications such as