Hefei Purple Horn E-Commerce Co., Ltd.
                                                                                                           
Verified Supplier
17 Years
Since 2009
Menu
Home Products Single FETs, MOSFETs

Single FETs, MOSFETs

China Surface Mount Compatible 30V MOSFET Siliup SP3023CNJ with Low On Resistance and Halogen Free Certification for sale

Surface Mount Compatible 30V MOSFET Siliup SP3023CNJ with Low On Resistance and Halogen Free Certification

Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable

Product Overview The SP3023CNJ is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mount applications, this device offers fast switching speeds and is ROHS Compliant & Halogen-Free. It features 100% single pulse avalanche energy testing. Key applications include DC-DC converters and motor control. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: SP3023CNJ Package: PDFN3X3-8L Certifications: ROHS Compliant &

China High current N Channel MOSFET Siliup SP70N07HTH 70V with low RDS on and fast switching capabilities for sale

High current N Channel MOSFET Siliup SP70N07HTH 70V with low RDS on and fast switching capabilities

Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable

Product Overview The SP70N07HTH is a 70V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching capabilities, low gate charge, and a low RDS(on) of 7.5m at 10V. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for demanding applications such as DC-DC converters and load switching. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: SP70N07HTH

China Compact DFN1006-3L P Channel MOSFET Siliup SP2004KNC with 20V Drain Source Voltage and 2KV ESD Protection for sale

Compact DFN1006-3L P Channel MOSFET Siliup SP2004KNC with 20V Drain Source Voltage and 2KV ESD Protection

Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable

Product Overview The SP2004KNC is a 20V P-Channel MOSFET designed by Siliup Semiconductor Technology Co. Ltd. This surface mount device offers high power and current handling capability, making it suitable for applications such as battery switches and DC/DC converters. It features ESD protection up to 2KV and is available in a compact DFN1006-3L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: P-Channel MOSFET Package: DFN1006-3L ESD

China ROHS compliant halogen free Siliup SP3011ACNK 30V complementary MOSFET for power electronics for sale

ROHS compliant halogen free Siliup SP3011ACNK 30V complementary MOSFET for power electronics

Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable

Product Overview The SP3011ACNK is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance applications. It features fast switching speeds, a surface mount package, and is ROHS Compliant & Halogen-Free. This device is 100% Single Pulse avalanche energy tested and is ideal for DC-DC converters and motor control applications. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: SP3011ACNK Type: Complementary

China power management solution featuring Siliup SP30P06NK 30V P Channel MOSFET with fast switching speeds for sale

power management solution featuring Siliup SP30P06NK 30V P Channel MOSFET with fast switching speeds

Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable

Product Overview The SP30P06NK is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds, a surface mount package, and is ROHS compliant & Halogen-Free. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for applications such as DC-DC converters and motor control. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: P-Channel

China Low RDSon P Channel MOSFET Siliup SP2004KT7J Surface Mount Device for Load Switching and Portable Electronics for sale

Low RDSon P Channel MOSFET Siliup SP2004KT7J Surface Mount Device for Load Switching and Portable Electronics

Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable

Product Overview The SP2004KT7J is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mount applications, this P-Channel switch features low RDS(on) and operates at low logic level gate drive. It is ESD protected and suitable for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics. The device is marked with 'KD' as its device code. Product Attributes Brand: Siliup Semiconductor

China 100V P Channel Power MOSFET Siliup SP010P10GHTD with Split Gate Trench Technology and Low On Resistance for sale

100V P Channel Power MOSFET Siliup SP010P10GHTD with Split Gate Trench Technology and Low On Resistance

Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable

Product Overview The SP010P10GHTD is a 100V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, this MOSFET offers fast switching, low gate charge, and low RDS(on). It is designed for various applications including PWM applications, hard-switched and high-frequency circuits, and power management. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor

China Surface Mount 60V MOSFET Siliup SP60N1K5KDTL Featuring Dual N Channel and 2KV ESD Protection for Power Applications for sale

Surface Mount 60V MOSFET Siliup SP60N1K5KDTL Featuring Dual N Channel and 2KV ESD Protection for Power Applications

Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable

Product Overview The SP60N1K5KDTL is a 60V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface mount device features ESD protection up to 2KV. Its applications include battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 15K Package: SOT-563 Technical Specifications Parameter Symbol Conditions Min. Typ. Max. Unit Product Summary

China Surface mount complementary MOSFET Siliup SP1012ACNK 100V fast switching speed ROHS compliant device for sale

Surface mount complementary MOSFET Siliup SP1012ACNK 100V fast switching speed ROHS compliant device

Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable

Product Overview The SP1012ACNK is a 100V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mount applications, it offers fast switching speeds and is ROHS Compliant & Halogen-Free. The device has undergone 100% single pulse avalanche energy testing. It is suitable for applications such as DC-DC converters and motor control. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: SP1012ACNK Type: Complementary MOSFET

China SG1M160120J Silicon Carbide Power MOSFET 1200V 21A TO2637L Package with Low Reverse Recovery Charge for sale

SG1M160120J Silicon Carbide Power MOSFET 1200V 21A TO2637L Package with Low Reverse Recovery Charge

Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable

Product Overview The SG1M160120J is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage (15V for turn-on), and fully controllable dv/dt. This device boasts high blocking voltage with low on-resistance, a fast intrinsic diode with low reverse recovery charge (Qrr), and temperature-independent turn-off switching losses. Its benefits include reduced cooling effort and

China High reliability Siliup SP40P08ANJ 40V P Channel MOSFET with single pulse avalanche energy testing for sale

High reliability Siliup SP40P08ANJ 40V P Channel MOSFET with single pulse avalanche energy testing

Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable

Product Overview The SP40P08ANJ is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for efficient power management, this MOSFET features fast switching speeds and low on-resistance, making it ideal for applications such as DC-DC converters. It is 100% tested for single pulse avalanche energy, ensuring reliability in demanding conditions. The device is housed in a compact PDFN3X3-8L package. Product Attributes Brand: Siliup Semiconductor

China power management device Siliup SP60P08GNK 60V P Channel Power MOSFET with Split Gate Trench Technology for sale

power management device Siliup SP60P08GNK 60V P Channel Power MOSFET with Split Gate Trench Technology

Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable

Product Overview The SP60P08GNK is a 60V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. It features advanced Split Gate Trench Technology for fast switching speeds and a low on-resistance, making it suitable for DC-DC converters and motor control applications. This device is ROHS Compliant & Halogen-Free and is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor

China N Channel MOSFET Siliup SP2N10T2A 100V 2A Drain Current SOT 23 Package Suitable for DC DC Converters for sale

N Channel MOSFET Siliup SP2N10T2A 100V 2A Drain Current SOT 23 Package Suitable for DC DC Converters

Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable

Product Overview The SP2N10T2A is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capabilities in a surface mount SOT-23 package. This MOSFET is suitable for applications such as battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: N-Channel MOSFET Package Type: SOT-23 Device Code: SP2N10T2A Version: Ver-1.1 Technical Specifications Parameter

China Power MOSFET Siliup SP60N01BGHNK 60V N Channel with 1.6m Typical RDSon and 120A Drain Current Rating for sale

Power MOSFET Siliup SP60N01BGHNK 60V N Channel with 1.6m Typical RDSon and 120A Drain Current Rating

Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable

Product Overview The SP60N01BGHNK is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Featuring advanced split gate trench technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is designed for power switching applications, PWM applications, and DC-DC converters, with a typical RDS(on) of 1.6m at 10V and a continuous drain current of 120A (package limit at 25C). It is available in a PDFN5X6-8L package and has undergone

China Power Management 30V N Channel MOSFET Siliup SP30N03BNK with Fast Switching and Surface Mount Package for sale

Power Management 30V N Channel MOSFET Siliup SP30N03BNK with Fast Switching and Surface Mount Package

Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable

Product Overview The SP30N03BNK is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds and a surface mount package. This ROHS Compliant & Halogen-Free component is 100% Single Pulse avalanche energy tested, making it suitable for demanding applications such as DC-DC converters and motor control. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP30N03BNK

China Power Electronics MOSFET Siliup SP95N65CTO Silicon Carbide 650V High Blocking Voltage for sale

Power Electronics MOSFET Siliup SP95N65CTO Silicon Carbide 650V High Blocking Voltage

Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable

Product Overview The SP95N65CTO is a 650V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high-speed switching with low capacitances and high blocking voltage combined with low RDS(on). It is designed for easy paralleling and simple driving, making it suitable for a wide range of power electronics applications. The SP95N65CTO is RoHS compliant. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Material: Silicon

China High Voltage Silicon Carbide MOSFET SG2M040120JJ with Low On Resistance and Enhanced Switching Speed for sale

High Voltage Silicon Carbide MOSFET SG2M040120JJ with Low On Resistance and Enhanced Switching Speed

Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable

Product Overview The SG2M040120JJ is a 1200V Silicon Carbide (SiC) Power MOSFET from TriQSiCTM, designed for high-speed switching applications. It offers very low switching losses, fully controllable dv/dt, and a high blocking voltage with low on-resistance. Key benefits include reduced cooling effort and requirements, improved efficiency, and increased power density. This MOSFET is ideal for applications such as on-board chargers, EV battery chargers, booster/DC-DC

China 270V N Channel Planar MOSFET Siliup SP40N27TF Featuring Low Gate Charge and Low RDSon for Switching for sale

270V N Channel Planar MOSFET Siliup SP40N27TF Featuring Low Gate Charge and Low RDSon for Switching

Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable

Product Overview The SP40N27TF is a 270V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it ideal for high-frequency switching applications and synchronous rectification. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for DC-DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP40N27TF Channel Type: N-Channel

China SG2M023120J1J Silicon Carbide MOSFET Featuring High Blocking Voltage and Low Reverse Recovery Charge for sale

SG2M023120J1J Silicon Carbide MOSFET Featuring High Blocking Voltage and Low Reverse Recovery Charge

Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable

Product Overview The SG2M023120J1J is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, fully controllable dv/dt, and high blocking voltage with low on-resistance. The device features a fast intrinsic diode with low reverse recovery charge (Qrr) and temperature-independent turn-off switching losses. These characteristics lead to reduced cooling efforts, improved efficiency, increased power density,

China Power Switching MOSFET Siliup SP30N08GDNK 30V Dual N Channel with Low Gate Charge and Fast Switching for sale

Power Switching MOSFET Siliup SP30N08GDNK 30V Dual N Channel with Low Gate Charge and Fast Switching

Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable

Product Overview The SP30N08GDNK is a 30V Dual N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications and isolated DC/DC converters in telecom and industrial sectors. The device is available in a PDFN5X6-8L package. Product Attributes Brand: