Single FETs, MOSFETs

Product OverviewThe PPJD14P06A-AU is a 60V P-Channel Enhancement Mode MOSFET designed for high-speed switching applications. It offers low RDS(ON), low gate charge, and improved dv/dt capability, making it suitable for various power management solutions. This MOSFET is AEC-Q101 qualified and compliant with EU RoHS 2.0.Product AttributesBrand: PanjitProduct Code: PPJD14P06A-AUCertifications: AEC-Q101 qualified, EU RoHS 2.0 compliant, Green molding compound as per IEC 61249

Product OverviewThe PJMG40P60TE is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Split Gate Trench Technology. It is designed for battery switching applications and hard switched, high-frequency circuits, offering robust performance with 100% avalanche testing. This RoHS and Reach compliant, halogen and antimony-free component is rated at -60V VDS and -40A ID, with a low RDS(on) of < 28m @VGS= -10V.Product AttributesBrand: PingJingSemiCertifications: RoHS and

Product OverviewThe PJM3415PSA is a Silicon P-Channel Power MOSFET designed for load switching and PWM applications. It features low gate charge and RDS(on), along with ESD protection up to 2KV (HBM). This MOSFET is packaged in a SOT-23 (TO-236) package.Product AttributesBrand: PingjingsemiMaterial: SiliconPackage: SOT-23ESD Protected: Yes (HBM up to 2KV)Technical SpecificationsParameterSymbolTest ConditionMinTypeMaxUnitsAbsolute Maximum RatingsDrain-Source Voltage-VDS20VGate

PJM90H09NTF N-Channel Enhancement Mode Power MOSFET The PJM90H09NTF is an N-Channel Enhancement Mode Power MOSFET designed for power switch circuits in adaptors and chargers. It features fast switching, low reverse transfer capacitances, and high voltage capability (VDS=900V) with a continuous drain current of 9A. Its low on-resistance (RDS(on)

Product OverviewThis P-channel MOS Field Effect Transistor (NP50P04SDG) is designed for high current switching applications, particularly in the automotive sector. It offers super low on-state resistance and low input capacitance, making it suitable for demanding automotive applications. The product is AEC-Q101 qualified and Pb-free.Product AttributesBrand: Renesas ElectronicsCertifications: AEC-Q101 QualifiedMaterial: Pb-free (external electrode)Application: AutomotiveTechni

Product OverviewThe TP65H030G4PQS is a 650V, 30m Gallium Nitride (GaN) FET from Renesas' Gen IV plus platform. This normally-off device integrates a high-voltage GaN HEMT with a low-voltage silicon MOSFET, offering superior performance, standard drive compatibility, and enhanced reliability. Its advanced design reduces gate charge, output capacitance, crossover loss, and reverse recovery charge, enabling high-efficiency, high power density, and reliable power conversion. This

Product OverviewThe PJM07P30SC is a P-Channel Enhancement Mode Power MOSFET designed for efficient power management applications. It features a high-density cell design for low RDS(ON), making it suitable for load switching, battery protection, and power management tasks. Available in a compact SOT-23-3 package.Product AttributesBrand: PingJingSemiPackage: SOT-23-3Marking Code: KPTechnical SpecificationsParameterSymbolTest ConditionMin.Typ.Max.UnitAbsolute Maximum RatingsDrai

Product OverviewThe PJM09P20SC is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for load switch, PWM application, and power management. This RoHS and Reach compliant, Halogen and Antimony Free component offers low on-resistance and is suitable for various power switching applications.Product AttributesBrand: PingJingSemiCertifications: RoHS and Reach Compliant, Halogen and Antimony FreeMoisture Sensitivity Level: 3Technical

PJMG60P60TE P-Channel Enhancement Mode Power MOSFET The PJMG60P60TE is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Split Gate Trench Technology. It is 100% avalanche tested and RoHS compliant, making it a Halogen and Antimony Free component. This MOSFET is designed for applications such as DC-DC converters, portable equipment, and power management, offering a VDS of -60V and an ID of -60A with low on-resistance. Product Attributes Brand: Pingjingsemi

SiC FET Device - UJ3C120080K3S Product Overview This 1200V-80mW SiC FET device features a unique cascode circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. Its standard gate-drive characteristics allow for a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in the TO-247-3L package, this device offers ultra-low gate charge and exceptional reverse recovery, making it ideal for

Product OverviewThe PJM05P30PA is a P-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low RDS(on) through advanced trench technology. It is suitable for PWM applications, load switching, and power management scenarios, featuring a VDS of -30V and an ID of -5.1A with RDS(on) < 55m at VGS = -10V.Product AttributesBrand: PJM (implied from product code)Origin: www.pingjingsemi.comRevision: 3.0Date: Oct-2022Technical Specifications

Product OverviewThe PJM15P40TE is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for applications such as Load Switching, PWM, and Power Management. Key advantages include 100% Avalanche Tested, RoHS Compliance, and being Halogen and Antimony Free. This MOSFET offers a VDS of -40V and an ID of -15A, with low on-resistance characteristics.Product AttributesBrand: PingJingSemiCertifications: RoHS Compliant, Halogen and Antimony

Product OverviewThe PJM4601DPSG-S is a Dual P-Channel Enhancement Mode Power MOSFET designed for surface mounting. It offers high power and current handling capabilities, making it suitable for load switching, battery protection, and power management applications. This component is halogen and antimony-free.Product AttributesBrand: PingJingSemiPackage: SOT-23-6Certifications: Halogen and Antimony FreeTechnical SpecificationsParameterSymbolTest ConditionMin.Typ.Max.UnitDrain

Product OverviewThe PJM2309PSA is a P-Channel Power MOSFET designed for efficient power management applications. It features a -60V drain-source voltage, -2.0A continuous drain current, and a low on-resistance of 200m (max) at -10V. This device is halogen and antimony-free, making it suitable for environmentally conscious designs. Its applications include load switching and PWM applications.Product AttributesBrand: PingJingCertifications: Halogen and Antimony FreeTechnical

Product OverviewThe AO3415A-L is a P-Channel MOSFET designed for various applications. It offers key features such as low on-state resistance and robust absolute maximum ratings, making it suitable for power management solutions.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterConditionMinTypMaxUnitAbsolute Maximum Ratings (Tamb=25C unless otherwise specified)VDS

Product OverviewThe PJM08C30PA is a N and P-Channel Complementary Power MOSFET designed for power management applications. It offers low on-resistance, low input capacitance, and fast switching speeds, making it suitable for various electronic circuits requiring efficient power control.Product AttributesBrand: Pingjing SemiconductorModel: PJM08C30PAPackage: SOP-8Revision: 3.0Date: Oct-2022Technical SpecificationsParameterSymbolN-Channel Min.N-Channel Typ.N-Channel Max.N

Product OverviewThe PTA05N65 is a 650V N-channel Planar MOSFET designed for various power applications. It offers low gate charge for minimized switching loss and a fast recovery body diode. Key features include RoHS compliance and a typical RDS(ON) of 1.85 at VGS=10V. This device is suitable for adaptors, chargers, and SMPS standby power applications.Product AttributesBrand: Perfect Intelligent Power Semiconductor Co., Ltd (PIP)Model: PTA05N65Package: TO-220FCertifications:

UnitedSiC UJ4C075044K4S 750V SiC FET Product Overview The UnitedSiC UJ4C075044K4S is a 750V, 44mW G4 Silicon Carbide (SiC) FET designed for high-performance power applications. This device utilizes a unique 'cascode' circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. Its standard gate-drive characteristics make it a direct 'drop-in replacement' for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. The

Product OverviewThe PJM04DN30PA is a Dual N-Channel Enhancement Mode Power MOSFET designed for various applications including load switching, PWM applications, and power management. It features advanced trench technology, 100% avalanche testing, and is RoHS and Reach compliant, making it a reliable and environmentally conscious choice.Product AttributesBrand: PingJingSemiProduct Type: Dual N-Channel Enhancement Mode Power MOSFETMarking Code: 04DN30Package: SOP-8Certifications

Product OverviewThe PJM09P20DF is a P-Channel Enhancement Mode Power MOSFET designed for efficient load switching and power management applications. It features low gate charge and low RDS(ON), offering advantages in PWM applications. This MOSFET operates with a VDS of -20V and an ID of -9A, with RDS(on) as low as 26m at VGS=-4.5V.Product AttributesBrand: PingJingSemiProduct Code: PJM09P20DFPackage Type: DFN2x2-6LMarking Code: 09P20Technical SpecificationsParameterSymbolTest