Single FETs, MOSFETs

Product OverviewThe PJM13N30PA is an N-Channel Enhancement Mode Power MOSFET designed for load switching, PWM applications, and power management. It features advanced trench technology, 100% avalanche testing, and is RoHS and Reach compliant, as well as Halogen and Antimony Free. This MOSFET offers a VDS of 30V and a continuous ID of 13A, with low RDS(on) values of

Product OverviewThe SI2333DS-L is a P-Channel MOSFET designed for various applications. It features low RDS(ON), meets UL 94 V-0 flammability rating, and is Moisture Sensitivity Level 1 compliant. Available in a lead-free finish and RoHS compliant, it offers an operating junction temperature range of -55C to +150C. Optional halogen-free versions are available upon request.Product AttributesBrand: SZPIELENSTCertifications: UL 94 V-0 Flammability Rating, Moisture Sensitivity

AO3400-L N Channel Enhancement Mode MOSFET The AO3400-L is an N-Channel Enhancement Mode MOSFET designed for various applications including battery protection, load switching, and uninterruptible power supplies. It offers a low on-state resistance and robust performance characteristics. Product Attributes Brand: SZPIELENST Model: AO3400-L Channel Type: N Channel Mode: Enhancement Mode Package: SOT23 Technical Specifications Parameter Symbol Condition Min Typ Max Unit Drain

RQK0204TGDQA Silicon N Channel MOS FET Power Switching The RQK0204TGDQA is a silicon N-channel MOS FET designed for power switching applications. It features low on-resistance, low drive current, high-speed switching, and is compatible with 2.5 V gate drive. This device is suitable for various electronic applications requiring efficient power management. Product Attributes Brand: RENESAS Package Code: PLSP0003ZB-A Package Name: MPAK Marking: TG Technical Specifications Item

Product OverviewThe PJM2302NSC is an N-Channel Enhancement Mode Power MOSFET designed for power switching applications and power management. It features fast switching, low gate charge, low RDS(on), and high power and current handling capability. Key specifications include VDS= 20V, ID= 4A, and RDS(on)< 40m @VGS= 4.5V.Product AttributesBrand: Pingjing Semiconductor (implied by www.pingjingsemi.com)Product Code: PJM2302NSCPackage Type: SOT-23-3Technical SpecificationsParameter

Product OverviewThe PJM03N60SQ is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features advanced trench technology, offering low on-resistance and high performance for various applications. This RoHS and Reach compliant component is halogen and antimony free, suitable for DC/DC converters and battery switch applications.Product AttributesBrand: PJM (implied by product code)Certifications: RoHS and Reach Compliant, Halogen and Antimony

Product OverviewThe PJM2310NSC is an N-Channel Enhancement Mode Power MOSFET designed for high power and current handling capabilities. It features a VDS of 60V and an ID of 3A, with a low RDS(on) of less than 105m at VGS=10V. This MOSFET is suitable for applications such as battery switches and DC/DC converters, offering reliable performance in a compact SOT-23-3 package.Product AttributesBrand: PingJingSemiOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCert

Product OverviewThe PJM12P30PA is a P-Channel Enhancement Mode Power MOSFET designed for power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. It features a high-density cell design for ultra-low RDS(on) and an excellent package for good heat dissipation. Key specifications include VDS of -30V, ID of -12A, and RDS(on) < 10.5m @VGS= -10V.Product AttributesBrand: PingJingSemiRevision: 5.0 Oct-2022Marking Code:

Product OverviewThe SI2305-L is a P-Channel 12-V (D-S) MOSFET designed for load switching in portable devices and DC/DC converters. It features TrenchFET technology for enhanced performance and is housed in a compact SOT23 package.Product AttributesBrand: SZPIELENSTOrigin: China (implied by WWW.SZPIELENST.COM)Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageVDS-12VGate-Source VoltageVGS±8VContinuous Drain CurrentID-4.1AContinuous Source

Product OverviewThe PJA3413-AU is a 20V P-Channel Enhancement Mode MOSFET designed for switch load and PWM applications. It features advanced trench process technology, AEC-Q101 qualification, and compliance with EU RoHS 2.0 and IEC 61249 standards. This MOSFET offers low on-state resistance at various gate-source voltages, making it suitable for demanding applications.Product AttributesBrand: Panjit International Inc.Certifications: AEC-Q101 qualified, Lead free in

Product OverviewThe PJM65H02CNTE is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is designed for load switch and PWM applications, offering RoHS and Reach compliance, and is halogen and antimony free. This MOSFET is suitable for power management solutions.Product AttributesBrand: PingJingSemiCertifications: RoHS and Reach Compliant, Halogen and Antimony FreeMoisture Sensitivity Level: 3Technical SpecificationsParameterSymbolTest

Product OverviewThe PJM60H12MNSA is an N-Channel Depletion Mode MOSFET designed for various electronic applications. It offers improved ESD capability, RoHS and Reach compliance, and is halogen and antimony free. This MOSFET is characterized by its high breakdown voltage (600V) and low on-resistance.Product AttributesBrand: PingJingSemiCertifications: RoHS and Reach Compliant, Halogen and Antimony FreeMoisture Sensitivity Level: 1Technical SpecificationsParameterSymbolTest

PJM2309PSC P-Channel Power MOSFET The PJM2309PSC is a P-Channel Power MOSFET designed for load switching and PWM applications, offering efficient power management. It features a VDS of -60V, ID of -4A, and a low RDS(ON) of 180m (max) at -10V. This device is halogen and antimony-free, making it an environmentally conscious choice. Product Attributes Brand: PingJingSemi Certifications: Halogen and Antimony Free Package: SOT-23-3 Technical Specifications Parameter Symbol Test

Product OverviewThe PJM13P40PA is a P-Channel Enhancement Mode Power MOSFET designed for load switching, PWM applications, and power management. It features advanced trench technology, 100% avalanche testing, and is RoHS and Reach compliant. This device is halogen and antimony free with a Moisture Sensitivity Level 3.Product AttributesBrand: PingJingSemiModel: PJM13P40PACertifications: RoHS and Reach Compliant, Halogen and Antimony FreeMoisture Sensitivity Level: 3Technical

Product OverviewThe PJM2301PSA is a P-Enhancement Mode Field Effect Transistor designed for high power and current handling capabilities. It is a halogen-free product suitable for surface mount applications, offering advantages in battery protection, load switching, and power management scenarios. Its SOT-23 package is ideal for space-constrained designs.Product AttributesBrand: PingjingsemiCertifications: Halogen freeTechnical SpecificationsParameterSymbolConditionsMin.Typ

Product OverviewThe 2SK3018 is an N-Channel Enhancement Mode Power MOSFET in a SOT-23 small outline plastic package. It features a high-density cell design for ultra-low on-resistance and is manufactured using advanced trench process technology. This device is Halogen-free and RoHS compliant, offering a robust solution for various electronic applications.Product AttributesBrand: (Parker Microelectronics)Origin: Shenzhen, ChinaCertifications: UL: 94V-0, Halogen free, RoHS

Product OverviewThe PPJA3415AE is a 20V P-Channel Enhancement Mode MOSFET featuring ESD protection. It utilizes an advanced trench process and is specifically designed for switch load and PWM applications. Key advantages include low on-state resistance at various gate-source voltages and continuous drain current levels, along with ESD protection up to 2KV HBM. This product is lead-free and compliant with EU RoHS 2011/65/EU, and manufactured with a green molding compound

Product OverviewThe 40V P-Channel Enhancement Mode MOSFET, model PPJA3441, is designed for efficient load switching and PWM applications. It features advanced trench process technology, low on-resistance (RDS(ON)), and is compliant with EU RoHS 2011/65/EU and IEC61249 standard for green molding compound (Halogen Free). This MOSFET is housed in a compact SOT-23 package.Product AttributesBrand: Panjit International Inc.Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen

PPJA3405-AU 30V P-Channel Enhancement Mode MOSFET The PPJA3405-AU is a 30V P-Channel Enhancement Mode MOSFET designed for switch load and PWM applications. It features advanced trench process technology, AEC-Q101 qualification, and compliance with EU RoHS 2.0. This MOSFET offers low on-resistance and is suitable for various demanding applications. Product Attributes Brand: Panjit International Inc. Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant, Green molding

Product OverviewThe PJM05P40SA is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is RoHS and Reach Compliant, and Halogen and Antimony Free, making it suitable for various load switch, PWM, and power management applications. This device offers a VDS of -40V and an ID of -5A, with low RDS(on) ratings of < 88m @VGS= -10V and < 117m @VGS= -4.5V.Product AttributesBrand: PingJingSemiCertifications: RoHS and Reach CompliantMaterial: Halogen and