Single FETs, MOSFETs

Product OverviewThe PJM2312JNSA is an N-Channel Enhancement Mode Power MOSFET from Pingjingsemi, featuring advanced trench technology. It is designed for applications such as load switching, PWM applications, and power management. The device is RoHS and Reach compliant, and is Halogen and Antimony Free. It offers a VDS of 20V and ID of 6A, with low RDS(on) values.Product AttributesBrand: PingjingsemiCertifications: RoHS and Reach Compliant, Halogen and Antimony FreeMoisture

Product Overview The OSG65R1K4xF series of Enhancement Mode N-Channel Power MOSFETs from Oriental Semiconductor utilizes advanced GreenMOSTM technology to deliver exceptional performance. These MOSFETs are engineered for low RDS(on), minimal gate charge, fast switching speeds, and excellent avalanche characteristics. They are ideally suited for demanding applications such as active power factor correction and switching mode power supplies, offering low switching loss and high

Product Overview The OSG70R750DF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS series. This high-voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge, engineered to minimize conduction and switching losses. It offers superior switching performance and robust avalanche capability, making it optimized for extreme switching performance and high power density applications. Ideal for

Product Overview The 2N7002KTB is an N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers very low leakage current in the off condition and is specifically designed for battery-operated systems, solid-state relays, and various driver applications including relays, displays, lamps, solenoids, and memories. This ESD-protected device (2KV HBM) is lead-free and compliant with EU RoHS2

Product OverviewThe PJM08N30DF is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is RoHS and Reach compliant, halogen and antimony free, and has a Moisture Sensitivity Level 1. This MOSFET is designed for load switching, PWM applications, and power management, offering a VDS of 30V, ID of 8A, and low RDS(on) at various gate-source voltages.Product AttributesBrand: PingJing SemiconductorCertifications: RoHS, Reach CompliantMaterial: Halogen

Product OverviewThe PJM2321PSA is a P-Channel Power MOSFET designed for load switching and PWM applications, offering efficient power management. It features a -20V Drain-to-Source Voltage and a continuous drain current of -2.9A, with a low on-resistance of 57m (max) at -4.5V.Product AttributesBrand: PingJingSemiPackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionMinTypeMaxUnitsDrain-source breakdown voltageV(BR)DSSVGS = 0V, ID=-250A-20VDrain to Source Leakage

Product OverviewThe PJM2302NSA-S is an N-channel Enhancement Mode Field Effect Transistor in a SOT-23 package. It offers fast switching, low gate charge, and low on-state resistance (RDS(on)), providing high power and current handling capability. This device is suitable for applications such as battery protection, load switching, and power management.Product AttributesBrand: PingjingsemiOrigin: China (implied by website domain)Material: Not specifiedColor: Not specifiedCertif

Product OverviewThe P2N7002KW-AU is a 60V N-Channel Enhancement Mode MOSFET featuring ESD protection. It offers ultra-low on-resistance due to its advanced trench process technology and high-density cell design. This MOSFET is specifically designed for battery-operated systems and solid-state relays, making it suitable for driving relays, displays, and memories. It boasts very low leakage current in the off condition and is AEC-Q101 qualified.Product AttributesBrand: Panjit

Product OverviewThe 2N7002KDW is a 60V N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers very low leakage current in off-condition, making it ideal for battery-operated systems and solid-state relays. This ESD-protected device is suitable for driving relays, displays, lamps, solenoids, and memories.Product AttributesBrand: Panjit International Inc.Certifications: EU RoHS 2011/65

Product Overview The OSH25N60 is a 600V N-Channel MOSFET from OSEN, designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, low-level drive capability, and tested avalanche energy. This MOSFET is ideal for applications such as high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts. Product Attributes Brand: OSEN Publication Order Number: OSH25N60 Revision: Rev 21.2.10 Package Type: TO

OSPF65R380 650V Super-Junction Power MOSFETThe OSPF65R380 is a 650V super-junction Power MOSFET designed for high-efficiency applications. It features very low FOM RDS(on), 100% avalanche tested, improved dv/dt capability, and high ruggedness. This MOSFET is suitable for use in high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENPublication Order Number: OSPF65R380Rev: 21.2.10Certifications: RoHS

Product Overview The OSG60R180xSF series is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, utilizing advanced GreenMOSTM technology. These MOSFETs offer low RDS(on), low gate charge, fast switching, and excellent avalanche characteristics. They are designed for applications requiring high efficiency and reliability, such as active power factor correction and switching mode power supplies. The series is available in multiple package types including

Product Overview The OSG80R1K4DF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS series. Utilizing charge balance technology, it delivers outstanding low on-resistance and reduced gate charge, engineered for minimized conduction and switching losses. This MOSFET offers superior switching performance and robust avalanche capability, making it ideal for high power density applications requiring the highest efficiency standards. Key

Product OverviewThe PJM7002KNDC is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features fast switching, low gate charge, and low RDS(ON), making it suitable for applications such as load switching and PWM control. Its compact DFN1x0.6-3L package and robust performance characteristics make it a versatile component for modern electronic designs.Product AttributesBrand: PJMPackage: DFN1x0.6-3LMarking Code: K72Origin: Not specifiedMateri

Product OverviewThe PJM3400JNSC is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is RoHS and Reach Compliant, Halogen and Antimony Free, and has a Moisture Sensitivity Level 3. This MOSFET is designed for load switch and PWM applications, offering a VDS of 30V and a continuous ID of 5A, with low RDS(on) at various VGS levels.Product AttributesBrand: PingJingSemiCertifications: RoHS and Reach Compliant, Halogen and Antimony FreeMoisture

Product OverviewThe PJM4602DNSG-S is a Dual N-Channel MOSFET designed for efficient power management applications. It features fast switching, low gate charge, and low RDS(on), providing high power and current handling capabilities. This MOSFET is ideal for battery protection, load switching, and general power management circuits.Product AttributesBrand: PingJingSemiModel: PJM4602DNSG-SRevision: 1.0Date: Apr-2020Marking Code: DS02Technical SpecificationsParameterSymbolConditi

Product Overview The SFS04R038GF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, designed using their unique FSMOS technology. It offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The low Vth series is optimized for synchronous rectification systems requiring low driving voltage. Key applications include PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode power

2N7002KW N-Channel Enhancement Mode MOSFETThe 2N7002KW is an N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers very low leakage current in off-condition and is specially designed for battery-operated systems. This ESD-protected device is suitable for applications such as solid-state relays, drivers for relays, displays, lamps, solenoids, and memories.Product AttributesCertificat

Product OverviewThe PPJE8404 is a 30V N-Channel Enhancement Mode MOSFET with ESD protection. It features advanced trench process technology and is specifically designed for switch load and PWM applications. This MOSFET offers low on-state resistance at various gate-source voltages and is compliant with EU RoHS 2011/65/EU directive and IEC61249 standard for green molding compound (Halogen Free).Product AttributesBrand: Panjit International Inc.Certifications: EU RoHS 2011/65

Product OverviewThe SI2306 is an N-Channel Enhancement Mode Power MOSFET featuring a high-density cell design for ultra-low on-resistance. It utilizes advanced trench process technology and is housed in a SOT-23 small outline plastic package. This device is halogen-free and RoHS compliant, offering high performance for various power management applications.Product AttributesBrand: (Parker Microelectronics)Origin: Shenzhen, ChinaCertifications: UL:94-V-0, Halogen free, RoHS