Single FETs, MOSFETs

2N7002K N-Channel Enhancement Mode MOSFET - ESD ProtectedThe 2N7002K is a 60V N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers very low leakage current in off-condition, making it ideal for battery-operated systems. This ESD-protected device is specially designed for applications such as Solid-State Relays, Drivers (Relays, Displays, Lamps, Solenoids, Memories), and more

Product OverviewThe PJM3400NSC is an N-Channel Enhancement Mode Field Effect Transistor designed for load switching and PWM applications, offering high power and current handling capabilities. It features low on-state resistance at various gate-source voltages, making it suitable for power management solutions.Product AttributesBrand: PingJingSemiModel: PJM3400NSCPackage: SOT-23-3Type: N-Channel Enhancement Mode Field Effect TransistorTechnical SpecificationsParameterSymbolCo

Product OverviewThe PJM15N30DF is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is RoHS and Reach compliant, halogen and antimony free, and has a Moisture Sensitivity Level 1. This MOSFET is designed for load switch, PWM applications, and power management, offering a VDS of 30V and an ID of 15A with low RDS(on) values.Product AttributesBrand: PingJingSemiCertifications: RoHS, Reach Compliant, Halogen and Antimony FreeMoisture Sensitivity

Product OverviewThe PJM10H01PSA is a P-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features fast switching, low gate charge, and low RDS(on), making it suitable for applications such as PWM, load switching, and power management. The device is housed in a SOT-23 package.Product AttributesBrand: PingJingSemiPackage Type: SOT-23Technical SpecificationsParameterSymbolTest ConditionMin.Typ.Max.UnitAbsolute Maximum RatingsDrain-Source Voltage

Product OverviewThe PPJA3406 is a 30V N-Channel Enhancement Mode MOSFET designed for switch load, PWM applications, and solid-state relays. It features advanced trench process technology for improved performance and is compliant with EU RoHS 2011/65/EU directive and IEC61249 standard for green molding compound (Halogen Free). This MOSFET offers low on-resistance values at specified gate-source and drain-source conditions.Product AttributesBrand: Panjit International Inc

Product Overview The OSG55R074HSZF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS Z series. It leverages charge balance technology for exceptional low on-resistance and reduced gate charge, minimizing conduction loss and enhancing switching performance. This series integrates a fast recovery diode (FRD) for minimized reverse recovery time, making it ideal for resonant switching topologies. Applications include PC power, telecom power,

Product Overview The SFS06R02GF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, built on their unique device design to deliver low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically optimized for synchronous rectification power systems requiring low driving voltage. It is well-suited for applications such as PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and

Product OverviewThe SI2305 is a P-Channel Enhancement Mode Power MOSFET designed for high-density applications. It features an advanced trench process technology for ultra-low on-resistance and is housed in a standard SOT-23 small outline plastic package. This MOSFET is halogen-free and RoHS compliant, making it suitable for various electronic applications.Product AttributesBrand: (Paker Microelectronics)Origin: Shenzhen, ChinaPackage: SOT-23 Small Outline Plastic PackageCert

Product OverviewThe OSP80P06T is a -60V P-CHANNEL MOSFET from OSEN, designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, low level drive, and avalanche energy testing. This MOSFET is ideal for applications such as high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENPublication Order Number: OSP80P06TRevision: 21.2.10Technical SpecificationsParametersSymb

Product OverviewThe OSPF22N65C is a 650V N-channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt performance with high ruggedness. This MOSFET is ideal for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENModel: OSPF22N65CPackage: TO-220FTechnical SpecificationsParametersUnitConditionsM

OSPF9N90 900V N-CHANNEL MOSFETThe OSPF9N90 is a 900V N-channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt capability with high ruggedness. Tested for avalanche energy, this MOSFET is suitable for high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENModel: OSPF9N90Package: TO-220FTechnical

Product Overview The Oriental Semiconductor GreenMOS OSG65R900DTF is an N-Channel Power MOSFET designed for high-efficiency applications. Utilizing charge balance technology, it offers outstanding low on-resistance and reduced gate charge, minimizing conduction and switching losses. This MOSFET is engineered for superior switching performance, robust avalanche capability, and high power density, making it ideal for demanding applications such as PC power supplies, LED

Product OverviewThe PTA09N45 is a 450V N-Channel MOSFET featuring proprietary new planar technology. It offers a low gate charge for minimized switching loss and a fast recovery body diode. This MOSFET is suitable for applications such as ballasts, lighting, DC-AC inverters, and other general applications.Product AttributesBrand: PIPOrigin: Perfect Intelligent Power Semiconductor Co., Ltd.Technical SpecificationsPart NumberPackageVDSS (V)RDS(ON),typ. ()ID (A)VGS(TH) (V)Ciss

Product OverviewThe PD616BA is a N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It offers a robust performance with key parameters like high drain-source voltage, low on-resistance, and significant continuous drain current capabilities. This transistor is Halogen-Free & Lead-Free, ensuring environmental compliance.Product AttributesBrand: NIKO-SEMModel: PD616BAPackage: TO-252Certifications: Halogen-Free & Lead-FreeTechnical Specification

Product OverviewThe PKC26BB is a G-48-2 N-Channel Enhancement Mode Field Effect Transistor designed for protection and DC-to-DC converter applications. It offers low RDS(on) to minimize conduction losses and an optimized gate charge for reduced switching losses. This device is PbFree, Halogen Free, and RoHS compliant, featuring 100% UIS and Rg tested for enhanced reliability.Product AttributesBrand: NIKO-SEMModel: PKC26BBPackage: PDFN 5x6PCertifications: PbFree, Halogen Free,

Product OverviewThe PJA3439-AU is a 60V P-Channel Enhancement Mode MOSFET designed for efficient power management. It features advanced trench process technology and is AEC-Q101 qualified, making it suitable for demanding automotive applications. This MOSFET is specifically designed for relay driver and speed line drive applications, offering low on-resistance and excellent thermal characteristics.Product AttributesBrand: Panjit International Inc.Certifications: AEC-Q101

Product OverviewThe IRFP360PBF is a 400V N-CHANNEL MOSFET from OSEN, designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt capability with high ruggedness. Its applications include high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts. The TO-247S package is utilized.Product AttributesBrand: OSENPublication Order Number: IRFP360PBFRevision:

Product OverviewThe OSP150N08G is an N-Channel Power Trench MOSFET from OSEN, designed for high-performance applications. It features fast switching speeds, low gate charge, and high power and current handling capabilities. This RoHS compliant component is suitable for DC to DC converters and synchronous rectification.Product AttributesBrand: OSENPublication Order Number: OSP150N08GRevision: 21.2.10Certifications: RoHS compliantTechnical SpecificationsParametersUnitValueCondi

Product Overview The OSG60R099KSZF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS Z series. It leverages charge balance technology for exceptional low on-resistance and reduced gate charge, minimizing conduction losses and enhancing switching performance. Integrated with a fast recovery diode (FRD), it offers minimized reverse recovery time, making it ideal for resonant switching topologies that demand higher efficiency, reliability, and

Product Overview The UJ4C075044B7S is a 750V, 44mW G4 SiC FET, engineered with a unique 'cascode' circuit configuration combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET device. This design offers standard gate-drive characteristics, making it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. It excels in applications requiring fast switching and standard gate drive, such as EV charging, switch mode power