Single FETs, MOSFETs

Product Overview The OSG60R108KZF is a GreenMOS high voltage N-Channel Power MOSFET from Oriental Semiconductor, engineered with charge balance technology for exceptional low on-resistance and reduced gate charge. This series is integrated with a fast recovery diode (FRD) to minimize reverse recovery time, making it ideal for resonant switching topologies that demand higher efficiency, reliability, and a smaller form factor. It offers minimized conduction loss, superior

Product Overview The SFS15R10GNF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, designed with unique device technology to deliver low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series, featuring a high Vth, is specifically engineered for power supply systems requiring a driving voltage exceeding 10V. It is ideal for applications such as switched-mode power supplies, motor drivers, battery protection, DC

Product OverviewThe BSS123K is an N-Channel Enhancement Mode Power MOSFET in a SOT-23 small outline plastic package. It features a high-density cell design for ultra-low on-resistance, advanced trench process technology, and is halogen-free and RoHS compliant. This MOSFET is suitable for various applications requiring efficient power management.Product AttributesBrand: (Pakermicro)Origin: Shenzhen, ChinaPackage: SOT-23 Small Outline Plastic PackageCertifications: UL:94V-0,

Product OverviewThe PJM10P30PA is a P-Channel Enhancement Mode Power MOSFET designed for efficient power management applications. It features advanced trench technology, 100% avalanche testing, and compliance with RoHS and Reach standards, making it a reliable choice for load switching, PWM applications, and power management systems. This MOSFET offers low on-resistance and high continuous drain current capabilities.Product AttributesBrand: PingJingSemiProduct Code:

Product OverviewThe PJM2300NSA is an N-Channel MOSFET featuring TrenchFET technology, offering excellent RDS(on) and low gate charge. It is designed for load switching in portable devices and DC/DC converters.Product AttributesBrand: PingjingsemiPart Number: PJM2300NSATechnology: TrenchFET Power MOSFETPackage: SOT-23Marking: M02Revision: 1.0Date: Jan-2019Technical SpecificationsParameterSymbolConditionsMin.Typ.Max.UnitsAbsolute Maximum RatingsDrain-Source VoltageVDSTA

Product OverviewThe PPJA3404 is a 30V N-Channel Enhancement Mode MOSFET in a SOT-23 package. It features low RDS(ON) at various gate-source voltages and drain currents, utilizing advanced trench process technology. This MOSFET is specifically designed for switch load and PWM applications. It complies with EU RoHS 2011/65/EU directive and uses a green molding compound as per IEC61249 Std. (Halogen Free).Product AttributesBrand: Panjit International Inc.Package: SOT-23Certifica

Product Overview The NSS060N04P3 is an N-Channel Enhancement Mode Trench Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. It features low RDS(ON) for high efficiency, low gate charge for high-speed switching, and high EAS for reliability. This MOSFET is 100% UIS and RG tested and is suitable for applications such as DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, printed

Silicon Carbide Field-Effect Transistor (SiC FET) - UJ4C075044K3S Product Overview The UJ4C075044K3S is a 750V, 44mW G4 SiC FET designed for high-performance power applications. It utilizes a unique 'cascode' circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. This design offers standard gate-drive characteristics, enabling it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction

Product OverviewThe IXTK90N25L2 is a 250V N-CHANNEL MOSFET from OSEN, designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive, tested avalanche energy, and improved dv/dt capability for high ruggedness. This MOSFET is suitable for high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENOrigin: http://www.osen.net.cnPublication Order Number:

Product OverviewThe PV601CA is an N- & P-Channel Enhancement Mode Field Effect Transistor in a SOP-8 package. It is designed for various applications requiring efficient switching and low on-resistance. This device is Halogen-Free & Lead-Free, promoting environmental responsibility.Product AttributesBrand: NIKO-SEMPackage: SOP-8Certifications: Halogen-Free & Lead-FreeTechnical SpecificationsParameterN-ChannelP-ChannelUnitsDrain-Source Voltage (VDS)30-30VGate-Source Voltage

Product OverviewThe 2N7002K-AU is a 60V N-Channel Enhancement Mode MOSFET featuring ESD protection. It utilizes advanced trench process technology and a high-density cell design for ultra-low on-resistance and very low leakage current in the off condition. This MOSFET is specially designed for battery-operated systems and various driver applications, including solid-state relays, displays, and memories. It is AEC-Q101 qualified and lead-free, complying with EU RoHS 2.0 and

Product OverviewThe PK600BA is a N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It offers high performance with key features like low on-resistance and efficient switching characteristics. This transistor is Halogen-Free & Lead-Free, making it suitable for environmentally conscious designs.Product AttributesBrand: NIKO-SEMModel: PK600BAPackage: PDFN 5x6PCertifications: Halogen-Free & Lead-FreeTechnical SpecificationsParameterSymbolTest

Product Overview The 2N7002K is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. It offers low RDS(ON) for high efficiency and low gate charge for high-speed switching. With high EAS for reliability, this MOSFET is suitable for applications such as DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, printed circuit board control, automotive

Product Overview The NPB7N65F is a 650V N-channel Enhancement MOSFET from Niu Hang. It features low RDS(ON), ultra-low gate charge, and is RoHS compliant. This MOSFET is 100% UIS and RG tested, making it suitable for applications such as adapters, PCs, PDs, chargers, switched-mode power supplies (SMPS), and uninterruptible power supplies (UPS). Its robust design and electrical characteristics ensure reliable performance in demanding power applications. Product Attributes

Product Overview The NPB4N65F is a 650V N-Channel Enhancement Mode Power MOSFET from Niu Hang Specification Electronic Co. Ltd. It features low RDS(ON) and ultra-low gate charge, making it suitable for applications such as adapters, PCs, PDs, chargers, and switched-mode power supplies (SMPS), including uninterruptible power supplies (UPS). This RoHS compliant component is 100% UIS and RG tested, ensuring high reliability and performance. Product Attributes Brand: Niu Hang (NH

Product Overview The SFS08R07GF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, engineered with their unique FSMOS technology. This device offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The low Vth series is specifically designed for synchronous rectification power systems requiring low driving voltage. Key applications include PD chargers, motor drivers, switching voltage regulators, DC-DC converters,

Product OverviewThe PJM40N40TE is an N-Channel Enhancement Mode Power MOSFET from Pingjingsemi, featuring advanced trench technology for high performance and reliability. It is 100% avalanche tested and RoHS compliant, offering a VDS of 40V and ID of 40A with low on-resistance (RDS(on)< 13m @VGS= 10V). This MOSFET is suitable for load switching, high-frequency circuits, and uninterruptible power supply applications.Product AttributesBrand: PingjingsemiModel: PJM40N40TECertifi

Product OverviewThe PJM150N30TE is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is 100% avalanche tested and RoHS compliant, making it a halogen and antimony-free option. This MOSFET is suitable for applications such as load switching, battery protection, and uninterruptible power supplies.Product AttributesBrand: PJM (implied by product code)Certifications: RoHS Compliant, Halogen and Antimony Free, Moisture Sensitivity Level 3Technical

Product OverviewThe IRF740PBF is a 450V N-CHANNEL MOSFET from OSEN, designed for high-efficiency applications. It features fast switching speed, high input impedance, low level drive, and improved dv/dt capability with high ruggedness. This MOSFET is suitable for use in high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENModel: IRF740PBFPackage: TO-220ABTechnical SpecificationsParametersUnitRatingsCond

OSD9N50C 500V N-CHANNEL MOSFET The OSD9N50C is a 500V N-Channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive, and improved dv/dt capability for enhanced ruggedness. This MOSFET is suitable for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts. Product Attributes Brand: OSEN Publication Order Number: OSD9N50C Revision: Rev 21.2.10 Package: TO-252