Single FETs, MOSFETs

Product OverviewThe P3710BD is a N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It offers high performance with features like low on-resistance and robust thermal characteristics, making it suitable for power management solutions.Product AttributesBrand: NIKO-SEMModel: P3710BDPackage: TO-252Certifications: Halogen-Free & Lead-FreeTechnical SpecificationsParameterSymbolTest ConditionsLimitUnitABSOLUTE MAXIMUM RATINGSDrain-Source

P-Channel Logic Level Enhancement Mode Field Effect Transistor - PE507BA The PE507BA is a P-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various applications. It offers advantages such as halogen-free and lead-free compliance, making it suitable for environmentally conscious designs. This transistor is ideal for use in power management and switching applications where a P-channel, logic-level device is required. Product Attributes Brand: NIKO-SEM

Product Overview The NSS085N100S is an N-channel 100V Enhancement Mode Power MOSFET from Niu Hang. Engineered with advanced trench MOSFET technology, it offers low RDS(ON) and ultra-low gate charge, making it highly efficient. This RoHS compliant and rigorously tested component is designed for high power and current handling capabilities. It is suitable for a variety of applications including PD Charger V-BUS, SMPS 2nd Synchronous Rectifier, MB/VGA Vcore, BLDC Motor drivers,

Product OverviewThe NIKO-SEM H-21-2 is a Dual N-Channel Enhancement Mode Field Effect Transistor in a PK650DY PDFN 5x6P package. It offers low RDS(on) for minimized conduction losses and an optimized gate charge for reduced switching losses. This transistor is Pb-free, halogen-free, and RoHS compliant, making it suitable for protection circuits, logic/load switch circuits, and DC-to-DC converters.Product AttributesBrand: NIKO-SEMModel: H-21-2Package: PK650DY PDFN 5x6PCertific

Product OverviewThe PM509BA is a P-Channel Enhancement Mode Field Effect Transistor designed for various applications. It features a SOT-23(S) package and is Halogen-Free & Lead-Free, indicating compliance with environmental standards.Product AttributesBrand: NIKO-SEMPackage: SOT-23(S)Certifications: Halogen-Free & Lead-FreeTechnical SpecificationsParameterSymbolTest ConditionsLimitsUnitsABSOLUTE MAXIMUM RATINGSDrain-Source VoltageVDS-30VGate-Source VoltageVGS±20VContinuous

Product OverviewThe IRF1404PBF is a 40V N-Channel MOSFET designed for high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts. It features fast switching speeds, high input impedance, low level drive, and improved dv/dt capability with high ruggedness. The device has undergone avalanche energy testing.Product AttributesBrand: OSENModel: IRF1404PBFPackage: TO-220Publication Order Number: IRF1404PBFRevision: 21.2.1Technical Specificatio

OSD65R650 650V Super-Junction Power MOSFET The OSD65R650 is a 650V super-junction Power MOSFET designed for high-efficiency applications. It features very low FOM RDS(on), 100% avalanche tested, and improved dv/dt capability for high ruggedness. This device is RoHS compliant. Product Attributes Brand: OSEN Publication Order Number: OSD65R650 Revision: Rev 21.2.10 Certifications: RoHS compliant Applications High efficiency switch mode power supplies Power factor correction

Product OverviewThis is a channel device in a package, offering a conduction impedance of at Vgs and a continuous current. It features low gate charge, low gate voltage, and high current conduction capability, making it suitable for applications such as load switching and control.Product AttributesPackage: PackageTechnical SpecificationsModelVgs (V)Rds(on)Id (A)Gate Charge (nC)Package TypePinoutOSM15N10 XXXXX / 15N10 YMLLL2020m (Typ)-LowPackage1.Gate, 2.Drain, 3.SourceNote:

Product Overview The SFG08R06DF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, built on their unique SFGMOS technology. It offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically optimized for synchronous rectification systems requiring low driving voltage. Key applications include PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode power

Product OverviewThe YHJ-65P080CF is a normally-off Cascode GaN High Electron Mobility Transistor (HEMT) device designed for high power applications. It offers high breakdown voltage, high current capability, and high operating speed. Its Cascode configuration ensures compatibility with standard gate drive voltages, making it suitable for demanding power electronics systems.Product AttributesBrand: Jiangxi Yuhongjin Chip Technology Co., Ltd.Part Number: YHJ-65P080CFPackage:

Product OverviewThe 2N7002K is a 60V N-Channel Enhancement Mode MOSFET featuring ESD protection. It utilizes advanced trench process technology and a high-density cell design for ultra-low on-resistance. This MOSFET is specially designed for battery-operated systems and drivers for relays, displays, and memories, offering very low leakage current in the off condition and ESD protection up to 2KV HBM. It is lead-free and compliant with EU RoHS 2.0, with a green molding

Product OverviewThe PPJD11N06A-AU is a 60V N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-resistance (RDS(ON)), high switching speed, improved dv/dt capability, and low gate charge. This MOSFET is AEC-Q101 qualified and complies with EU RoHS 2.0 and IEC 61249 standards, making it suitable for lead-free and green manufacturing processes. Its robust design and thermal characteristics ensure reliable operation in various

Product Overview The NPB9N20ES is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and speed, it features low RDS(ON) for reduced power loss and low gate charge for fast switching. Its high EAS rating ensures reliability in demanding applications. Typical uses include DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives,

Product Overview The NPS4N60S is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. It offers low RDS(ON) for high efficiency, low gate charge for high-speed switching, and high EAS for reliability. This MOSFET is 100% UIS and RG tested and is suitable for AC/DC converters, adaptors, chargers, LED drives, high-frequency circuits, and switching power supplies. Product Attributes Brand: Niuhang (NH) Origin: Guangdong,

Product Overview The NTS036N03P5 is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and high-speed switching, this MOSFET features low RDS(ON), low gate charge, and high EAS for enhanced reliability. It is ideal for demanding applications such as DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, printed circuit board

Product Overview The NSH079N15P5 is an N-Channel Enhanced Shielded Gate Trench Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and high-speed switching, this MOSFET features low RDS(ON), low gate charge, and high EAS for enhanced reliability. It is ideal for demanding applications such as DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, printed

Product Overview The NPS16N65F is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and high-speed switching, this MOSFET features low RDS(ON), low gate charge, and high EAS for enhanced reliability. It is ideal for applications such as AC/DC converters, adaptors, chargers, LED drives, high-frequency circuits, and switching power supplies. The product is 100% UIS and RG tested. Product

Product OverviewThe PZD502CYB is an N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various electronic applications. It features a SOT-523 package and is Halogen-Free & Lead-Free, indicating its compliance with environmental standards. This transistor offers ESD protection on the gate, ensuring robustness in handling and operation.Product AttributesBrand: NIKO-SEMPackage: SOT-523Certifications: Halogen-Free & Lead-FreeGate Protection: ESD

Product Overview The AO3404 is an N-Channel Enhancement Mode Power MOSFET designed for high-density cell applications. It features an ultra-low on-resistance due to its advanced trench process technology and high-density cell design. This MOSFET is housed in a small outline SOT-23 plastic package, making it suitable for various electronic applications requiring efficient power management. It is halogen-free and RoHS compliant. Product Attributes Brand: (Parker Microelectronic

Product OverviewThe P2610BD is an N-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. It offers a robust combination of voltage, current, and low on-resistance capabilities, making it suitable for power switching and control circuits. This transistor is Halogen-Free & Lead-Free, adhering to environmental standards.Product AttributesBrand: NIKO-SEMModel: P2610BDPackage: TO-252Certifications: Halogen-Free & Lead-FreeTechnical