Single FETs, MOSFETs

Product Overview The MJF11N70 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for easy gate switching control. It offers a 700V breakdown voltage, 11A continuous drain current, and a typical on-resistance of 0.34. This MOSFET is 100% avalanche tested and is suitable for applications such as single-ended flyback or two-transistor forward topologies, commonly found in PC power supplies, PD adaptors, LCD & PDP TVs, and

Product Overview The MS8001C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This MOSFET offers high performance with an 85V drain-source voltage, 120A continuous drain current, and a low on-resistance of 4.6m (typ.) at VGS = 10V. Key features include fast switching, high avalanche ruggedness, excellent RDS(ON), low gate charge, and low reverse transfer capacitances. It is ideally suited for applications such as motor drivers, general switching

Product Overview The MJD06N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring Advanced Super Junction Technology for easy gate switching control. It is 100% avalanche tested and suitable for applications such as PD Adapters, LCD & PDP TVs, LED lighting, and Boost PFC switches, including single-ended flyback or two-transistor forward topologies. Product Attributes Brand: Miracle Technology Co., Ltd. Technology: Advanced Super Junction Technology

Product Overview The MS3005X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., engineered with advanced technology for high-performance applications. It offers a robust combination of 30V drain-source voltage and 30A continuous drain current, with a low on-resistance of 3.9m at VGS = 10V. Key features include reliable and rugged construction, fast switching speeds, and guaranteed 100% EAS (Avalanche Energy). This MOSFET is ideal for high-frequency

Product OverviewThe YHJ-65P150TK is a normally-off GaN High Electron Mobility Transistor (HEMT) device utilizing a cascode configuration. It offers high breakdown voltage, high current capability, and high operating speed, making it suitable for high-power applications. Its features include gate drive voltage compatibility (-20V to +20V), pin-to-pin compatibility with silicon (SJ) and SiC MOSFETs, high operating frequency, and low Qrr. Applications include Switch Mode Power

Product OverviewThe PA102FMG is a P-Channel Enhancement Mode MOSFET designed for various applications. It offers key electrical characteristics and thermal properties suitable for power management and switching tasks.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitSTATIC LIMITSV(BR)DSSVGS = -2.5V, ID = -1A-20VIDSSVDS = -16V, VGS

Product OverviewThe PE642DT is a Dual N-Channel Enhancement Mode Field Effect Transistor from NIKO-SEM, designed for efficient power management. It features a PDFN 3x3S package, offering Halogen-Free & Lead-Free compliance. This transistor is suitable for various applications requiring reliable switching and power handling capabilities.Product AttributesBrand: NIKO-SEMModel: PE642DTPackage: PDFN 3x3SCertifications: Halogen-Free & Lead-FreeTechnical SpecificationsParameterSymb

Product OverviewThe PM514BA is an N-Channel Enhancement Mode Field Effect Transistor designed for various electronic applications. It features a SOT-23(S) package, is Halogen-Free & Lead-Free, and offers reliable performance with its robust specifications.Product AttributesBrand: NIKO-SEMPackage: SOT-23(S)Certifications: Halogen-Free & Lead-FreeTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitsABSOLUTE MAXIMUM RATINGSGate-Source VoltageVGS±8VContinuous Drain

Product OverviewThe F-43-3 PJ614DA is a Dual N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It features J-Lead packaging, is Halogen-Free & Lead-Free, and offers robust performance with a 20V Drain-Source Voltage and up to 10.5A Continuous Drain Current. This transistor is suitable for power management and switching applications where efficiency and reliability are critical.Product AttributesBrand: NIKO-SEMModel: PJ614DAType: Dual N

Product Overview The NSS130N06S is an N-Channel Enhancement Mode Trench Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and reliability, this MOSFET features low RDS(ON) for reduced power loss and low gate charge for high-speed switching. Its high EAS rating ensures robust performance in demanding applications. Typical applications include DC/DC converters, synchronous rectification, high-frequency circuits,

Product Overview The NPS12N65F is a 650V N-Channel Enhancement Mode Power MOSFET from Niu Hang. It features low RDS(ON), ultra-low gate charge, and is RoHS compliant and 100% UIS and RG tested. This power MOSFET is designed for applications such as adapters, PCs, PDs, chargers, LED drivers, switched-mode power supplies (SMPS), and uninterruptible power supplies (UPS). Product Attributes Brand: Niu Hang (NH) Compliance: RoHS Compliant Testing: 100% UIS and RG Tested Technical

Product OverviewThe IRF3205STRLPBF-OSEN is a 55V N-Channel MOSFET from OSEN, designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, low level drive, and tested avalanche energy. This MOSFET is ideal for applications such as high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENOrigin: China (implied by .cn domain)Package: TO-263Technical SpecificationsParame

Product OverviewThe OSP160N03T is an N-Channel Enhancement Mode MOSFET from OSEN. It features fast switching speed, low gate charge, and high power and current handling capability, making it suitable for DC to DC converters and synchronous rectification applications. This product is RoHS compliant.Product AttributesBrand: OSENOrigin: http://www.osen.net.cnCertifications: RoHS compliantTechnical SpecificationsParametersUnitConditionsMinTypMaxAbsolute Maximum Ratings (Tc=25C

Product Overview The OSG65R380FEF is a high-voltage N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS series, engineered with charge balance technology. This technology delivers outstanding low on-resistance and reduced gate charge, minimizing conduction losses and enhancing switching performance. Optimized for a balance between EMI and efficiency, this MOSFET enables power supply systems to achieve high efficiency while meeting EMI standards. It is particularly

Product OverviewThe PK6A48BA is an N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It offers Halogen-Free & Lead-Free compliance, making it suitable for environmentally conscious designs.Product AttributesBrand: NIKO-SEMModel: PK6A48BAPackage: PDFN 5x6PCertifications: Halogen-Free & Lead-FreeTechnical SpecificationsParameterSymbolTest ConditionsLimitUnitABSOLUTE MAXIMUM RATINGSDrain-Source VoltageVDS40VGate-Source VoltageVGS±20VContinuous

Product Overview The MPF04N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. Designed for high-efficiency applications, it features a 650V breakdown voltage, a continuous drain current of 4A, and a low on-resistance (RDS(ON)) of 2.3 at 10V VGS. This MOSFET offers fast switching speeds and low Crss, making it suitable for charger and standby power applications. It is 100% avalanche tested for enhanced reliability. Product Attributes Brand: Miracle Technology Co

Product Overview The MU3009X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced trench technology for superior performance. It offers a 30V drain-source voltage and a continuous drain current of 30A, with a low typical on-resistance of 6.5m at 10V gate-source voltage. This MOSFET is designed for applications such as load switching, PWM applications, and power management, benefiting from its lead-free construction and excellent RDS(ON

Product Overview The MPF12N65A is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed with Miracle Technology for high performance. It features a 650V breakdown voltage, a continuous drain current of 12A at 25C, and a low on-resistance of 0.64 (typ.) at VGS = 10V. This MOSFET offers low Crss and fast switching characteristics, making it suitable for applications such as adaptors, standby power supplies, switching power supplies, and LED power solutions. It

Product Overview The MU3019Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced Trench Technology. It offers a 30V drain-source voltage and a continuous drain current of 140A at 25C. Key benefits include fast switching, excellent RDS(ON) performance, and low gate charge, with a typical RDS(ON) of 1.6m at VGS = 10V. This MOSFET is 100% EAS Guaranteed and is suitable for applications such as load switching, PWM applications, and power

Niu Hang NPS10N65F 650V N-Channel Enhancement Mode Power MOSFET Product Overview The Niu Hang NPS10N65F is a 650V N-Channel Enhancement Mode Power MOSFET designed for high-efficiency power applications. It features low RDS(ON), ultra-low gate charge, and is 100% UIS and RG tested. This MOSFET is suitable for use in adapters, PCs, PDs, chargers, LED drivers, switched-mode power supplies (SMPS), and uninterruptible power supplies (UPS). Its robust design and advanced features