Single FETs, MOSFETs

Product Overview The NJS65R300F is an N-Channel Enhancement Super Junction MOSFET manufactured by Guangdong Niuhang Specification Electronic Technology Co., Ltd. It features low RDS(ON) for high efficiency and low gate charge for high-speed switching, making it suitable for high-frequency circuits and switching power supplies. Key applications include AC/DC converters, adaptors, chargers, LED drives, and general switching power supplies. The MOSFET offers high EAS for

Product Overview The NSH300N15P3 is an N-Channel Enhanced Shielded Gate Trench Power MOSFET from Niuhang Electronic Specification Technology Co., Ltd. It features NH'S Advanced SGT Technology, offering low reverse transfer capacitances and low gate charge for reduced switching loss. This MOSFET is designed for applications requiring high efficiency, such as synchronous rectification, high-frequency circuits, motor drives, and automotive electronics. Its key performance

OSPF90N03T LOW Voltage Trench Nch MOSFETThe OSPF90N03T is a low voltage Trench N-channel MOSFET designed for high-performance applications. It features fast switching speed, low gate charge, and high power and current handling capability. This RoHS compliant component is ideal for DC to DC converters and synchronous rectification.Product AttributesBrand: OSENPublication Order Number: OSPF90N03TRevision: 21.2.10Certifications: RoHS compliantTechnical SpecificationsParametersUn

Product OverviewThe PK5A7BA is a P-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various applications requiring efficient power switching. It features low RDS(on) to minimize conduction losses and an optimized gate charge for reduced switching losses. This device is Pb-Free, Halogen-Free, and RoHS compliant.Product AttributesBrand: NIKO-SEMProduct Name: PK5A7BAPackage Type: PDFN 5x6PCertifications: PbFree, Halogen Free, RoHS compliantTesting: 100%

Product Overview The NTS036N03S is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and speed, it features low RDS(ON) for reduced power loss and low gate charge for fast switching. Its high EAS rating ensures reliability in demanding applications. Typical uses include DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives,

Product OverviewThe 65H225 Series is a range of high-performance components designed for industrial and consumer applications. These devices offer robust features and reliable performance, making them suitable for various demanding electronic systems. The series includes models with specific application focuses, such as industrial and consumer electronics, ensuring a tailored solution for diverse needs.Product AttributesBrand: YHJOrigin: Not specifiedMaterial: Not specifiedCo

Product OverviewN-Channel Logic Level Enhancement Mode Field Effect Transistor designed for general purpose applications. This transistor is Halogen-Free & Lead-Free, ensuring compliance with environmental standards.Product AttributesBrand: NIKO-SEMModel: P5506BDGPackage: TO-252Certifications: Halogen-Free & Lead-FreeTechnical SpecificationsParameterSymbolTest ConditionsLimitUnitsABSOLUTE MAXIMUM RATINGSDrain-Source VoltageVDS60VGate-Source VoltageVGS±20VContinuous Drain

Product OverviewThe OSPF8N60 is a 600V N-CHANNEL MOSFET from OSEN, designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, and low-level drive capabilities, making it suitable for demanding power applications.Product AttributesBrand: OSENPublication Order Number: OSPF8N60Revision: Rev 21.2.10Technical SpecificationsParametersUnitRatingsConditionsAbsolute Maximum RatingsDrain-Source Voltage (VDSS)V600Gate-Source Voltage-Continuous

Product Overview The Oriental Semiconductor SFS08R03PNF is an Enhancement Mode N-Channel Power MOSFET designed for high-performance power supply systems. Leveraging Oriental Semiconductors unique device design, it offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically engineered for driving voltages exceeding 10V, making it ideal for applications such as switched-mode power supplies, motor drivers, battery

Product Overview The OSG65R360DEF is a high voltage N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS E series. Utilizing charge balance technology, it delivers outstanding low on-resistance and reduced gate charge, minimizing conduction loss and enhancing switching performance. This series is optimized for a balance between EMI and efficiency, enabling power supply systems to achieve high efficiency while meeting EMI standards. Ideal for applications including

MGZ31N65 650V GaN FET Enhancement Mode Product Overview The MGZ31N65 is a 650V Gallium Nitride (GaN) Field-Effect Transistor (FET) operating in enhancement mode. It offers a low on-resistance of 230m (typ.) at 8V VGS, very low QRR, and reduced crossover loss, making it easy to drive with commonly-used gate drivers. This GaN FET enables AC-DC bridgeless totem-pole PFC designs, leading to increased power density, reduced system size and weight, and lower overall system cost. It

Product Overview The NTH084N06C is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. It features low RDS(ON) for high efficiency and low gate charge for high-speed switching, making it suitable for demanding applications. Its high EAS rating ensures high reliability. Typical applications include DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, and

Product OverviewThe P8503BMG is an N-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various applications. It features Halogen-Free & Lead-Free construction and is housed in a SOT-23 package.Product AttributesBrand: NIKO-SEMPackage: SOT-23Certifications: Halogen-Free & Lead-FreeTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitsABSOLUTE MAXIMUM RATINGSGate-Source VoltageVGS±20VContinuous Drain CurrentIDTA = 25 °C2.4AContinuous Drain

Product Overview The NSH045N100P5 is an N-channel Enhancement Mode Power MOSFET from Niu Hang, featuring advanced trench MOSFET technology for low RDS(ON) and ultra-low gate charge. This RoHS-compliant, 100V device is 100% UIS and RG tested, offering high power and current handling capabilities. It is suitable for applications such as PD Charger V-BUS, SMPS 2nd Synchronous Rectifier, MB/VGA Vcore, BLDC Motor Driver, and POL applications. Product Attributes Brand: Niu Hang (NH

OSD7N65 650V N-CHANNEL MOSFET The OSD7N65 is a 650V N-channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt capability for enhanced ruggedness. This MOSFET is suitable for use in high-efficiency switch-mode power supplies, power factor correction circuits, and electronic lamp ballasts. Product Attributes Brand: OSEN Origin: China (implied by .cn domain) Material: Not

Product Overview The Oriental Semiconductor GreenMOS OSG65R360DTF is a high-voltage N-Channel Power MOSFET engineered with charge balance technology for outstanding low on-resistance and reduced gate charge. This series is optimized for extreme switching performance, minimizing conduction and switching losses to deliver superior efficiency and high power density. It offers robust avalanche capability and is ideal for demanding applications such as PC power supplies, LED

Product OverviewThe P6002OAG is a N- & P-Channel Enhancement Mode Field Effect Transistor designed for various applications. It offers Halogen-Free & Lead-Free compliance and is packaged in a TSOP-6 configuration.Product AttributesBrand: NIKO-SEMPackage: TSOP-6Certifications: Halogen-Free & Lead-FreeTechnical SpecificationsParameterSymbolN-ChannelP-ChannelUnitsDrain-Source Breakdown VoltageV(BR)DSS20-20VGate Threshold VoltageVGS(th)0.4 - 1.3-0.4 - -1.3VGate-Body LeakageIGSS

Product Overview The MS4001X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed for high-frequency switching and synchronous applications, including DC/DC converters. It offers a robust performance with a 40V drain-source voltage, 62A continuous drain current at 25C, and a low on-resistance of 4.4m typ. at VGS = 10V. This device is characterized by its fast switching speed, reliability, and is guaranteed 100% EAS tested, making it a dependable

Product Overview The NJS65R280S is an N-Channel Enhancement Super Junction MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and speed, this MOSFET features low RDS(ON) and low gate charge, making it ideal for high-frequency circuits and switching power supplies. Its high EAS rating ensures reliability, and it is 100% UIS and RG tested. Typical applications include AC/DC converters, adaptors, chargers, LED drives, and

Product Overview The MPC09N20A is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency applications. It features a 200V drain-source voltage, a continuous drain current of 9A, and a typical on-resistance of 0.23 at 10V gate-source voltage. Key advantages include low Crss, fast switching speeds, and 100% avalanche testing. This MOSFET is ideal for high-efficiency switch-mode power supplies, electronic lamp ballasts based on half-bridge