Single FETs, MOSFETs

Product Overview The MPW03NA5 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. This MOSFET features a high breakdown voltage of 1500V and a continuous drain current of 3A, with a low ON resistance of 5 (Typ.) at VGS = 10V. It is designed for fast switching, low gate charge, and offers 100% single pulse avalanche energy testing. Ideal for power switch circuits in adaptors and chargers. Product Attributes Brand: Miracle Technology Co., Ltd. Product Type: N-Channel

Product Overview The MJF15N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., engineered with Advanced Super Junction Technology. This device offers a 650V breakdown voltage, a continuous drain current of 15A, and a typical on-resistance of 0.28 at VGS = 10V. It is designed for easy gate switching control and operates in enhancement mode with a gate threshold voltage between 2.8V and 4.2V. Ideal for applications such as LED lighting, LCD & PDP TVs, power

Product Overview The MPF07N70 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for power switch circuits in adaptors and chargers. It features a 700V drain-source voltage, a continuous drain current of 7A, and a typical on-resistance of 1.18 at VGS = 10V. This MOSFET offers low gate charge, fast switching speeds, and is 100% tested for single pulse avalanche energy, making it suitable for efficient power conversion applications. Product Attributes

Product OverviewThe IRFB3077 is an 80V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. The TO

MPF10N65 N-Channel Power MOSFET The MPF10N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-performance power applications. It features a 650V breakdown voltage, a continuous drain current of 10A, and a low on-resistance of 0.80 (Typ.) at VGS = 10V. Key advantages include low Crss, fast switching speeds, and 100% avalanche tested for enhanced reliability. This MOSFET is suitable for various applications such as adapters, LCD/PDP adapters,

Product Overview The MPP12N65 is a 650V, 12A N-Channel Power MOSFET from Miracle Technology Co., Ltd. Engineered with Miracle Technology, it features a low Crss, fast switching speeds, and is 100% avalanche tested. This MOSFET is ideal for applications such as adapters, LCD panel power, E-bike chargers, and switching mode power supplies. Product Attributes Brand: Miracle Technology Co., Ltd. Technology: Miracle Technology Channel Type: N-Channel Testing: 100% Avalanche Tested

Product Overview The MJQ52N80F is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., engineered with Advanced Super Junction Technology for efficient and reliable performance. This MOSFET offers a high voltage rating of 800V and a continuous drain current of 52A, with a low on-resistance of 80m (typ.) at VGS = 10V. It features easy-to-control gate switching and is 100% avalanche tested, making it suitable for demanding applications. Key applications include PC power

Product OverviewThe MNS-KX 600V N-Channel Power MOSFET offers high performance and ruggedness for various applications. Key features include low on-state resistance (RDS(ON) < 4.4 @ VGS = 10V, ID =1A), fast switching capabilities, and improved dv/dt capability. This device is lead-free and compliant with the EU RoHS directive. Available in TO-251, TO-252, and TO-220F packages.Product AttributesBrand: MNS-KXCertifications: EU RoHS directive compliantOrigin: Shenzhen, China

Product OverviewThe MP50N06 is a Silicon N-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) and is suitable for a wide range of power switching and load switch applications. Key features include a VDS of 60V, ID of 50A, low ON resistance, low reverse transfer capacitances, and 100% single pulse avalanche energy testing.Product AttributesBrand: MNS (www.mns-kx.com)Origin: Shenzhen Minos Technology Co., Ltd.Package: TO-220Marking

Product Overview MJD11N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for efficient power management. It offers a 650V breakdown voltage and a low on-resistance of 0.32 (typ.) at 10V VGS, making it easy to control gate switching. This enhancement mode MOSFET is suitable for various power applications including resonant and hard switching PWM, PFC stages, PC power supplies, adaptors, LCD & PDP TVs, lighting,

Product OverviewThe MPG60N10P is a high-performance N-channel MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high ESD capability, a high-density cell design for lower Rds(on), and fully characterized avalanche voltage and current for enhanced

Product Overview The MJF25N60 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for easy gate switching control. It is rated at 600V and 25A with a typical on-resistance of 139m at VGS = 10V. This device is 100% avalanche tested and is suitable for various power applications including PC power, adaptors, server and telecom power supplies, LCD & PDP TVs, LED lighting, and UPS systems. It is also applicable in Boost PFC

Product OverviewThis N-Channel MOSFET is designed for high-voltage applications, offering a VDS of 650V and a continuous drain current of 8A. It features fast switching speeds, 100% avalanche testing, and improved dv/dt capability, making it suitable for demanding power supply applications. The device is RoHS and Halogen-Free compliant.Product AttributesBrand: MNSOrigin: Shenzhen Minos (China)Certifications: RoHS, Halogen-FreeTechnical SpecificationsSymbolParameterTest

Product OverviewThe MPG180N10P is an N-Channel Power MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. Its design is optimized for high ESD capability and a high-density cell structure for reduced on-resistance. This MOSFET is suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. It is fully characterized for avalanche voltage and

Product Overview The MPG55N06 is a Silicon N-Channel Power MOSFET utilizing advanced trench technology and design to achieve excellent RDS(ON). It is suitable for a wide range of applications, including power switching and load switching. Key features include a VDS of 60V, a continuous ID of 55A, and low ON resistance. The device also boasts low reverse transfer capacitances and undergoes 100% single pulse avalanche energy testing. Product Attributes Brand: MNS (www.mns-kx

Product DescriptionThe IRF3710STR is a silicon N-Channel Enhanced MOSFET utilizing advanced MOSFET technology to reduce conduction loss, improve switching performance, and enhance avalanche energy. This transistor is ideal for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications. Key advantages include reduced conduction loss, faster switching, 100% avalanche testing, and improved dv/dt capability.Product AttributesBrand: www.mns-kx.com

Product OverviewThe MP150N08 is an 80V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Its high-density cell design contributes to lower RDS(ON), and it is fully characterized for avalanche voltage and current, ensuring good stability and uniformity with high

Product OverviewThe IRFB4410Z is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. Key advantages include high-density cell design for lower Rdson, fully characterized avalanche voltage and current for stability and uniformity, and an excellent package

Product OverviewThe P80NF70 is an 80V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. Key advantages include high ESD capability, a high-density cell design for lower RDS(ON), fully characterized avalanche voltage and current, and good stability and

Product OverviewThe Supertex DN2540 is a low threshold depletion mode (normally-on) N-Channel Vertical DMOS FET, designed using an advanced vertical DMOS structure and a silicon-gate manufacturing process. It offers the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and thermally-induced secondary breakdown, making it suitable for a wide range of