Single Bipolar Transistors

Product OverviewThe 3DD13007K is a high voltage, fast-switching NPN power transistor designed for demanding applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lamps, electronic ballasts, high-frequency switching power supplies, high-frequency power transformation, and general power amplification circuits. This product is RoHS compliant.Product AttributesBrand: Jilin Sino

Product OverviewThe BFS17P is an NPN Silicon RF Transistor designed for broadband amplifiers up to 1 GHz and for mixers and oscillators in sub-GHz applications. It offers excellent performance with a low noise figure and high intercept point, making it suitable for demanding RF designs.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: Pb-free (RoHS compliant)Package: SOT23Technical SpecificationsParameterSymbolValueUnitNote or Test ConditionMaximu

Product OverviewThe BFP843 is a robust, low-noise, broadband, pre-matched bipolar RF transistor designed for demanding RF applications. It offers excellent performance characteristics suitable for various high-frequency circuits.Product AttributesBrand: Infineon TechnologiesProduct Name: BFP843Product Type: Robust Low Noise Broadband Pre-Matched Bipolar RF TransistorPackage: SOT343Origin: GermanyTechnical SpecificationsParameterSymbolMinTypMaxUnitDescriptionMaximum RatingsCol

BU406 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORThe BU406 is a high voltage, fast-switching NPN power transistor designed for applications such as high frequency switching power supplies, high frequency power transformation, and general power amplification circuits. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, in an environmentally friendly (RoHS) package.Product AttributesBrand: BU406Certifications: RoHSTechnica

Product OverviewThe BF776 is a high-performance NPN bipolar RF transistor designed for low-noise amplifier applications. It offers a low minimum noise figure of typically 0.8 dB @ 1.8 GHz and is suitable for a wide range of non-automotive applications including WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB, UMTS/LTE, and ISM bands. The transistor comes in an easy-to-use standard package with visible leads and is Pb-free (RoHS compliant).Product AttributesBrand: Infineon

Product OverviewThe ISC BD677 is a Silicon NPN Darlington Power Transistor designed for use as output devices in complementary general-purpose amplifier applications. It offers a collector-emitter breakdown voltage of 60V and a minimum DC current gain (hFE) of 750 at 1.5A, making it suitable for robust device performance and reliable operation. It is a complement to the BD678 type.Product AttributesBrand: ISCType: Silicon NPN Darlington Power TransistorRegistered Trademark:

Product OverviewThe BC856S/U and BC857S are PNP Silicon AF Transistor Arrays designed for AF input stages and driver applications. They offer high current gain, low collector-emitter saturation voltage, and feature two internally isolated transistors with good matching in a single package. These devices are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesCertifications: AEC Q101, Pb-free (RoHS compliant)Technical

Product OverviewThe BFS17S is a NPN Silicon RF Transistor designed for broadband amplifiers up to 1 GHz. It is suitable for collector currents ranging from 1 mA to 20 mA. This Pb-free (RoHS compliant) package is ESD sensitive and requires careful handling.Product AttributesBrand: Infineon TechnologiesCertifications: Pb-free (RoHS compliant)Package Type: SOT363ESD Sensitive: YesTechnical SpecificationsParameterSymbolValueUnitNotesMaximum RatingsCollector-emitter voltageVCEO15V

ISC BD680 PNP Darlington Power TransistorThe ISC BD680 is a Silicon PNP Darlington Power Transistor designed for use as output devices in complementary general-purpose amplifier applications. It offers a Collector-Emitter Breakdown Voltage of -80V and a minimum DC Current Gain of 750 at IC= -1.5 A. This transistor is a complement to the BD679 type and features minimum lot-to-lot variations for robust device performance and reliable operation.Product AttributesBrand:

Product OverviewThe BFP720 is a wideband NPN RF heterojunction bipolar transistor (HBT) designed for high-frequency applications. It offers a high transition frequency (fT = 45 GHz) enabling low noise figures at elevated frequencies, significant gain, and excellent linearity (OIP3). This product is qualified for industrial applications according to JEDEC standards.Product AttributesBrand: InfineonMaterial: SiGe:CPackage: SOT343Certifications: Qualified for industrial

Product OverviewThe BC856S/U and BC857S are PNP Silicon AF Transistor Arrays designed for AF input stages and driver applications. They offer high current gain, low collector-emitter saturation voltage, and feature two internally isolated transistors with good matching in a single package. These devices are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: AEC Q101, Pb-free (RoHS

Product OverviewThe TC233 / TC234 / TC237 are 32-bit single-chip microcontrollers from Infineon Technologies. These AC-Step microcontrollers are designed for various applications, offering advanced features and performance.Product AttributesBrand: Infineon TechnologiesOrigin: GermanyTechnical SpecificationsModelPackagePinsRevisionPublication DateTC233 / TC234 / TC237PG-LFBGA-292-6292V 1.02017-03TC237xPG-LFBGA-292-6292V 1.02017-03TC23x-ADASPG-TQFP-144-27144V 1.02017-03TC233xPG

Infineon RF TransistorsInfineon's RF transistors offer robust, flexible, small, and reliable solutions for complementary wireless applications. They are designed to meet the increasing demand for universal network availability and connectivity, supporting higher data rates and an expanding ecosystem of connected devices. These transistors provide superior performance, versatility, and supply security, making them ideal for various wireless communication systems, including

Product OverviewThe BFP740 is a wideband NPN RF heterojunction bipolar transistor (HBT) designed for high-performance applications. It offers a low noise figure, high gain, and excellent linearity, making it suitable for a wide range of wireless communication, satellite, multimedia, and ISM applications.Product AttributesBrand: InfineonTechnology: SiGe:CDevice Type: NPN RF bipolar transistorProduct Validation: Qualified for industrial applications according to JEDEC47/20/22

Infineon RF TransistorsInfineon's RF transistors are robust, flexible, and reliable devices designed for complementary wireless solutions. They offer superior RF performance, signal quality, and robustness, making them ideal for increasing data traffic in mobile systems and infrastructure. The 7th and 8th generations, based on Silicon-germanium (SiGe) B9 technology, provide excellent linearity, noise figures, and ESD protection, enabling enhanced system sensitivity,

Product OverviewThe S8550 is a PNP transistor in a TO-92 plastic package, designed for general-purpose applications. It offers excellent hFE linearity, making it suitable for various electronic circuits.Product AttributesBrand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTDOrigin: Not specifiedMaterial: Plastic-EncapsulateColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest conditionsMINTYPMAXUnitsCollector-Base VoltageVCBO-40VCollecto

Product OverviewThe HN13003 is a TO-92 plastic-encapsulated NPN transistor designed for various electronic applications. It offers a power dissipation of 1W at 25 ambient temperature and features high breakdown voltages.Product AttributesBrand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTDOrigin: ChinaPackage Type: TO-92Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitsCollector-Base VoltageVCBO700VCollector-Emitter VoltageVCEO450VEmitter-Base VoltageVEBO9

Product OverviewThe HT13003 (AFO) is an NPN bipolar transistor from SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD, designed for power switching applications. Encapsulated in a TO-126C plastic package, it offers robust performance for various electronic circuits.Product AttributesBrand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTDOrigin: ChinaPackage Type: TO-126CTechnical SpecificationsParameterSymbolTest ConditionsMINTYPMAXUnitsCollector-Base VoltageVCBO700VCollector

Product OverviewThe MMBT4403 is a PNP switching transistor in a SOT-23 package, designed for general-purpose switching applications.Product AttributesBrand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTDOrigin: ShenzhenPackage Type: SOT-23Encapsulation: PlasticTechnical SpecificationsParameterSymbolTest ConditionsMinMaxUnitCollector-Base VoltageVCBO-40VCollector-Emitter VoltageVCEO-40VEmitter-Base VoltageVEBO-5VCollector Current (Continuous)IC-0.6ACollector Power Dissipation

Product Overview This document describes the TO-92 Plastic-Encapsulated Transistor (NPN) from SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD. It features excellent hFE linearity and low noise, making it a complementary part to the A733. This transistor is suitable for various electronic applications requiring reliable amplification and switching. Product Attributes Brand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD Origin: Not specified Material: Plastic-Encapsulated