Single Bipolar Transistors
SiGe C Technology RF Bipolar Transistor Infineon BFP640ESDH6327 for Industrial Wireless Applications
Product OverviewThe BFP640ESD is a robust silicon NPN RF bipolar transistor from Infineon's sixth generation transistor family, utilizing SiGe:C technology. It offers high RF gain, low noise figure, and excellent ESD robustness, making it suitable for a wide range of wireless applications. This device provides a cost-competitive solution without compromising ease of use.Product AttributesBrand: InfineonMaterial: SiGe:C technologyCertifications: Qualified for industrial
NPN Silicon AF Transistor Array Infineon BC817UPNE6327HTSA1 with Two Internally Isolated Transistors
Product Overview The BC817UPN is an NPN Silicon AF Transistor Array designed for AF stages and driver applications. It features high current gain, low collector-emitter saturation voltage, and consists of two internally isolated NPN/PNP transistors in a single package. This component is Pb-free and RoHS compliant, qualified according to AEC Q101. Product Attributes Brand: Infineon Technologies Material: NPN Silicon Certifications: AEC Q101, RoHS compliant Package: SC74
Low Voltage PNP Switching Transistor Infineon MMBT2907ALT1HTSA1 with High Junction Temperature Rating
Product OverviewThe SMBT2907A/MMBT2907A is a PNP Silicon Switching Transistor designed for various applications. It features a low collector-emitter saturation voltage and is Pb-free (RoHS compliant). This transistor is qualified according to AEC Q101 standards. Its complementary type is the SMBT2222A/MMBT2222A (NPN).Product AttributesBrand: Infineon TechnologiesCertifications: AEC Q101, RoHS compliantPackage: SOT23Type Marking: s2FTechnical SpecificationsParameterSymbolValue
Silicon NPN Power Transistor ISC BU406 with High Voltage Capability and Peak Collector Current of 10A
Product OverviewThe INCHANGE Semiconductor BU406 is a silicon NPN power transistor designed for high-voltage applications. It features a high collector-emitter voltage (VCEV= 400V Min), fast switching speed (tf= 750ns Max), and low saturation voltage (VCE(sat)= 1.0V Max @ IC= 5A). This transistor is specifically designed for use in horizontal deflection output stages of TVs and CRTs.Product AttributesBrand: INCHANGE SemiconductorProduct Type: Silicon NPN Power TransistorModel
Surface mount silicon npn rf bipolar transistor Infineon BFP640H6327 with 42 GHz transition frequency
Product OverviewThe BFP640 is a surface mount, high linearity silicon NPN RF bipolar transistor utilizing SiGe:C technology. It is part of Infineons sixth generation transistor family, offering a transition frequency (fT) of 42 GHz. Its high linearity characteristics at low currents make it suitable for energy-efficient designs up to 8 GHz. This device provides cost competitiveness without compromising ease of use.Product AttributesBrand: InfineonMaterial: SiGe:C technologyCe
Low noise RF transistor Infineon BFR93AWH6327 ideal for in low distortion amplifiers and oscillators
Product OverviewThe BFR93AW is a low-noise silicon bipolar RF transistor designed for low distortion amplifiers and oscillators operating up to 2 GHz. It is suitable for collector currents ranging from 5 mA to 30 mA and comes in a Pb-free and halogen-free package with visible leads. Qualification reports according to AEC-Q101 are available. This device is ESD sensitive and requires careful handling.Product AttributesBrand: Infineon TechnologiesModel: BFR93AWPackage:
Low noise broadband amplifier silicon bipolar RF transistor Infineon BFR93AE6327HTSA1 with high gain
Product OverviewThe BFR93A is a low-noise silicon bipolar RF transistor designed for low-noise, high gain broadband amplifiers. It is suitable for collector currents ranging from 2 mA to 30 mA and is Pb-free (RoHS compliant). This device is ESD sensitive and requires careful handling.Product AttributesBrand: Infineon TechnologiesPackage: SOT23Certifications: AEC-Q101 availableCompliance: Pb-free (RoHS compliant)Technical SpecificationsParameterSymbolValueUnitNotesMaximum
High Current Gain PNP Silicon AF Transistor Infineon BC857BE6327HTSA1 Suitable for Audio Frequency Applications
Product OverviewThe BC856...-BC860... series are PNP Silicon AF Transistors designed for AF input stages and driver applications. They offer high current gain, low collector-emitter saturation voltage, and low noise characteristics between 30 Hz and 15 kHz. These transistors are Pb-free and RoHS compliant, qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: AEC Q101, Pb-free (RoHS compliant)Technical SpecificationsTyp
NPN Silicon Darlington Transistor Infineon BCV47E6327HTSA1 with SOT23 Package and High Current Gain
Product OverviewThe BCV27 and BCV47 are NPN Silicon Darlington Transistors designed for general AF applications. They offer high collector current, high current gain, and are Pb-free (RoHS compliant) and qualified according to AEC Q101. Complementary PNP types are BCV26 and BCV46.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: AEC Q101Package: SOT23Type Marking: BCV27 (FFs), BCV47 (FGs)RoHS Compliant: YesTechnical SpecificationsParameterSymbolBC
High voltage power transistor Jilin Sino-Microelectronics 3DD13005ED NPN transistor for switching power supplies
Product OverviewThe 3DD13005ED is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplifier circuits. This product is RoHS compliant.Product AttributesBrand: Jilin Sino-microelectronics Co., LtdCertification
High Current Silicon NPN Power Transistor ISC 2SC3709A with Low Collector Saturation Voltage Feature
ISC Silicon NPN Power Transistor 2SC3709AThe ISC 2SC3709A is a Silicon NPN Power Transistor designed for high current switching applications. It features a low collector saturation voltage (VCE(sat)= 0.4V(Max)@IC= 6A) and good linearity of hFE. This transistor is a complement to the 2SA1451A type.Product AttributesBrand: ISCRegistered Trademark: ISC & ISCsemiMaterial: SiliconType: NPN Power TransistorComplementary Type: 2SA1451ATechnical SpecificationsParameterConditionsMinTy
Wireless network connectivity improvement using Infineon BFP620H7764 RF transistor for mobile systems
Infineon RF TransistorsInfineon's RF transistors offer robust, flexible, and reliable solutions for complementary wireless applications. They are designed to enhance system sensitivity, improve interference immunity, and ensure stable signal reception and transmission across multiple or specific bands. These transistors are crucial for enabling universal network availability and connectivity in an increasingly mobile society, supporting the growing demand for data traffic in
Industrial grade Infineon BFP740FESDH6327XTSA1 NPN RF transistor featuring 21 dBm RF input power and 2 kV ESD protection
Product OverviewThe BFP740FESD is a wideband NPN RF heterojunction bipolar transistor (HBT) featuring integrated ESD protection. It offers a unique combination of high RF performance and robustness, with a maximum RF input power of 21 dBm and 2 kV ESD robustness (HBM). This transistor is qualified for industrial applications and is suitable for various wireless communication systems, satellite communication, multimedia applications, and ISM applications.Product AttributesBran
High Collector Emitter Voltage ISC 2SC4552 Silicon NPN Power Transistor for Driver Circuit Solutions
ISC Silicon NPN Power Transistor 2SC4552The 2SC4552 is an NPN power transistor designed for driver applications in DC/DC converters and actuators. It features a high collector-emitter sustaining voltage of 60V (Min), high DC current gain (hFE=100 Min @ VCE=2V, IC=3A), and low saturation voltage (VCE(sat)=0.3V Max @ IC=8A, IB=0.4A). Its robust device performance and reliable operation are ensured by minimum lot-to-lot variations.Product AttributesBrand: ISCTrademark: ISC &
Silicon npn rf bipolar transistor Infineon BFR360FH6327XTSA1 offering high gain and low noise for rf
Product OverviewThe BFR360F is a low-noise, low-current, and low-voltage silicon NPN RF bipolar transistor from Infineon's third-generation RF bipolar transistor family. It is designed for low current amplifiers and offers cost competitiveness with ease of use. Its key features include a minimum noise figure of 1 dB at 1.8 GHz, high gain, and a high OIP3, making it suitable for applications like LNAs for FM/AM radio and sub-1 GHz ISM band applications.Product AttributesBrand:
Jilin Sino Microelectronics 3DD4612DT 92 high voltage transistor for fast switching power electronics
Product OverviewThe 3DD4612DT/M is a high voltage, fast-switching NPN power transistor designed for various electronic applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for chargers, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant.Product AttributesBrand: Jilin Sino-microelectronics Co., Ltd.Origin:
Silicon NPN Bipolar Transistor Array Infineon BCM 846S H6327 Suitable For Current Mirror Applications
Product OverviewThe BCM846S is a silicon NPN bipolar transistor array designed for current mirror applications. It features a precision-matched transistor pair with a collector current difference of less than or equal to 10%, low collector-emitter saturation voltage, and two internally isolated transistors. This device is Pb-free and RoHS compliant, qualified according to AEC Q101 standards.Product AttributesBrand: Infineon TechnologiesComplementary Type: BCM856SMaterial:
NPN Silicon AF Transistor Infineon BCX5616H6327XTSA1 with High Collector Current and RoHS Compliance
Product OverviewThe BCX54-BCX56 series are NPN Silicon AF Transistors designed for AF driver and output stages. They offer high collector current, low collector-emitter saturation voltage, and are complementary to BCX51-BCX53 (PNP) series. These transistors are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: AEC Q101, RoHS compliantTechnical SpecificationsTypeType MarkingVCEO (V)VCBO
Low noise NPN RF Transistor Infineon BFR 193L3 E6327 with RoHS compliance and AEC Q101 certification
Product OverviewThe BFR193L3 is an NPN Bipolar RF Transistor designed for low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. This device is Pb-free (RoHS compliant) and has an AEC-Q101 qualification report available. It is an ESD sensitive device and requires careful handling.Product AttributesBrand: Infineon TechnologiesCertifications: RoHS
Low noise silicon bipolar RF transistor Infineon BFR183E6327HTSA1 for high gain broadband amplifiers
Product Overview The BFR183 is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates at collector currents ranging from 2 mA to 30 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This device is Pb-free, RoHS compliant, and a qualification report according to AEC-Q101 is available. It is an ESD-sensitive device and requires careful handling. Product Attributes Brand: