Single FETs, MOSFETs

Product Overview The SP40N08TH is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. Engineered for efficient power management, it features fast switching, low gate charge, and low RDS(on) at various gate drive voltages (8m at 10V and 11m at 4.5V). This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for demanding applications such as DC-DC converters and load switching. Product Attributes Brand: Siliup Semiconductor Technology

Product Overview The SP2004KDTL is a 20V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount package, with ESD protection up to 2KV. This MOSFET is designed for applications such as battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: SP2004KDTL Package: SOT-563 Circuit Diagram Marking: 04K ESD Protected: 2KV Technical Specificati

Product OverviewThis N-channel MOSFET offers low on-resistance and fast switching speeds, making it ideal for portable equipment due to its low voltage drive capability. The device is designed for easy drive circuit implementation and can be paralleled effectively.Product AttributesBrand: slkormicroModel: 2SK3019Package: SOT-523Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitsMAXIMUM RATINGSDrain-Source VoltageVDS30VGate-Source VoltageVGSS20VContinuous Drain

Product OverviewThe FDN340P is a P-Channel MOSFET designed with leading trench technology for low RDS(on) and low Gate Charge. It is suitable for applications such as video monitors and power management.Product AttributesBrand: slkormicroModel: FDN340PTechnical SpecificationsParameterConditionMinTypMaxUnitAbsolute Maximum RatingsDrain-Source Breakdown VoltageVGS=0VID=-250A-20----VZero Gate Voltage Drain CurrentVDS=-16VVGS=0V-----1uAGate-Body Leakage CurrentVGS=8VVDS=0V---

Product OverviewThe SL3N06 is an N-Channel Power MOSFET designed for various electronic applications. It offers reliable performance with key electrical and thermal characteristics suitable for power switching and amplification tasks.Product AttributesBrand: SL KORMICROModel: SL3N06Type: N-Channel Power MOSFETPackage: SOT-23Technical SpecificationsCharacteristicSymbolMinTypMaxUnitConditionsDrain-Source Breakdown VoltageBVDSS60VID =250uA,VGS=0VGate Threshold VoltageVGS(th

Product OverviewThis Power MOSFET utilizes Slkor's Advanced Super-Junction technology, designed to optimize conduction loss, enhance switching performance, and ensure robustness in avalanche and commutation modes. It is ideal for high-efficiency AC/DC power conversion in switching mode operations.Product AttributesBrand: SlkorTechnology: Advanced Super-JunctionCertifications: Pb-free and RoHS CompliantTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitsAbsolut

Product Overview The SL7N65 is a high-performance N-channel MOSFET designed for various power switching applications. It features low gate charge, fast switching speeds, and excellent dv/dt capability, making it suitable for high-efficiency switch mode power supplies, electronic lamp ballasts, and LED power supplies. This RoHS compliant product is 100% avalanche tested, ensuring reliability and robustness. Product Attributes Brand: SLKORMicro Certifications: RoHS Halogen Free

Product OverviewThe SL3420 is a high cell density trenched N-channel MOSFET designed for efficient power switching and load switch applications. It offers excellent RDS(ON) and efficiency, making it suitable for small power applications. This MOSFET meets RoHS and Green Product requirements.Product AttributesBrand: SLKORMicroCertifications: RoHS, Green ProductTechnical SpecificationsSymbolParameterConditionsMin.Typ.Max.UnitVDSDrain-Source Voltage20VVGSGate-Source Voltage

Product OverviewThe SL2310 is a N-Channel Power MOSFET designed for high power and current handling capabilities. It features a VDS of 60V and an ID of 3A, with low RDS(ON) values of

Product OverviewThe FDN302P is a P-Channel MOSFET featuring Trench Power LV MOSFET technology with a high-density cell design for low RDS(ON). It offers high-speed switching and is suitable for applications such as battery protection, load switching, and power management.Product AttributesBrand: slkormicroModel: FDN302PPackage: SOT-23Technical SpecificationsParameterConditionMinTypMaxUnitAbsolute Maximum RatingsVDS-20VVGS±12VTJ150°CTSTG-50155°CIDTc=25°C-2.4AIDMTc=25°C-10AISTc

Product Overview The 2SK3018 is an N-Channel Power MOSFET designed for various electronic applications. It offers specific electrical characteristics and thermal properties suitable for power management and switching circuits. Product Attributes Brand: slkormicro Model: 2SK3018 Package: SOT-23 Technical Specifications Characteristic Symbol Min Typ Max Unit Notes Drain-Source Breakdown Voltage BVDSS 30 V (ID =10uA,VGS=0V) Gate Threshold Voltage VGS(th) 0.8 2 V (ID =100uA,VGS=

Product OverviewThe SL2102 is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers high power and current handling capabilities, making it suitable for PWM applications and load switching.Product AttributesBrand: SLKormicro (implied by URL)Technical SpecificationsParameterSymbolConditionsMinTypMaxUnitProduct SummaryDrain-source VoltageVDS20VDrain CurrentID2.0ARDS(ON)RDS(ON)at VGS=4.5V68mohmRDS(ON)RDS(ON)at VGS=2

Product OverviewThe SL4822A is an N-Channel MOSFET featuring advanced high cell density Trench technology, offering super low gate charge and excellent CdV/dt effect decline. It is designed for high frequency point-of-load synchronous buck converters, networking DC-DC power systems, and load switch applications. This device is also available as a Green Device.Product AttributesBrand: SLKORMicroModel: SL4822ATechnology: TrenchPackage: SOP-8Certifications: Green Device

Product OverviewThis P-Channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(on) with low gate charge, making it suitable for a wide range of applications. Key features include high cell density trench technology for ultra-low RDS(ON), excellent package for good heat dissipation, and availability as a green device.Product AttributesBrand: slkormicroModel: IRF9540Technology: Advanced Trench TechnologyCertifications: Green device availableTechni

Product OverviewThe FDN338P is a P-Channel MOSFET featuring leading trench technology for low on-resistance (RDS(on)) and low gate charge. It is designed for applications such as video monitors and power management.Product AttributesBrand: slkormicroModel: FDN338PPackage: SOT-23Technical SpecificationsParameterSymbolConditionMinTypMaxUnitDrain-Source Breakdown VoltageBV(BR)DSSVGS=0VID=-250A-20----VZero Gate Voltage Drain CurrentIDSSVDS=-16VVGS=0V-----1uAGate-Body Leakage

Product DescriptionThe SL03P06A is a P-Channel MOSFET designed for high-density cell applications, offering ultra-low Rds(on). It features fully characterized avalanche voltage and current, along with an excellent package for good heat dissipation. This MOSFET is suitable for PWM applications, power management, and load switch functions.Product AttributesBrand: SLKormicroModel: SL03P06APackage: SOT-23Technical SpecificationsParameterSymbolConditionMinTypMaxUnitDrain-Source

Product Overview The SP40N04GNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low Gate Charge, and low RDS(on), utilizing advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for applications such as DC-DC converters, motor control, and portable equipment. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code:

Product OverviewThe SL50N02D is a 20V/50A N-Channel MOSFET featuring a high-density cell design for ultra-low Rds(on). It offers fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for good heat dissipation. This MOSFET is suitable for load switching, hard switched and high frequency circuits, and uninterruptible power supply applications.Product AttributesBrand: SLKormicroDevice Code: 50N02Package: TO

Product Overview The BSS84KDW is a 60V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability, ESD protection up to 2KV, and is available in a surface mount SOT-363 package. This MOSFET is suitable for applications such as battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: B84K Package: SOT-363 Technical Specifications Parameter Symbol

Product Overview The SP60N15HTQ is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, DC-DC converters, and power management, this MOSFET features fast switching, low gate charge, and low RDS(on). It is 100% tested for single pulse avalanche energy and comes in a TO-220-3L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP60N15HTQ Package: TO-220-3L Circuit Diagram Marking: