Single IGBTs

Product OverviewThe MG150HF12MIC2 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. This module offers fast switching and a short tail current, complemented by free-wheeling diodes with fast and soft reverse recovery. Ideal for welding machines, power supplies, and other industrial power

MG300HF12LEC2 S-M292 IGBT ModuleThe MG300HF12LEC2 S-M292 is a high-speed IGBT module featuring NPT technology, designed for high-frequency applications. It offers low switching losses, high short circuit capability (10s), and includes an ultra-fast & soft recovery anti-parallel FWD. Its low inductance and maximum junction temperature of 150 make it suitable for demanding environments.Product AttributesBrand: YangjieCertifications: RoHS CompliantTechnical SpecificationsParamet

Product OverviewThe MG15P12P2 S-M315 is a high-performance IGBT module designed for various power electronics applications. It offers low switching losses, low VCE(sat) with a positive temperature coefficient, and includes a fast & soft recovery anti-parallel FWD. The module features a low inductance case, high short circuit capability (10s), and an isolated heatsink using DBC technology, with a maximum junction temperature of 175. It is suitable for motor drivers, AC/DC

Product Overview The VBP16I40 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It offers very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply and industrial applications. Key features include a maximum junction temperature of 175C and avalanche energy rating (UIS). This IGBT is ideal for telecommunications, lighting, consumer electronics, industrial equipment, and renewable

Product OverviewThe MG100P12E2 S-M333 is an IGBT module designed for inverter applications, offering high performance and reliability. It features low Vce(sat) with a positive temperature coefficient, an integrated fast & soft recovery anti-parallel FWD, a low inductance case, and high short circuit capability. This module is suitable for motor drivers, AC/DC servo drive amplifiers, and UPS systems.Product AttributesBrand: YangjieModel: MG100P12E2 S-M333Certifications: RoHS

Product OverviewThe DGW30N65CTL S-M451D is a high-performance IGBT with low switching losses, maximum junction temperature of 175, positive temperature coefficient, high ruggedness, and excellent short circuit capability (10s). It is designed for applications such as inverters for motor drives, AC/DC servo drive amplifiers, uninterruptible power supplies, and motion/servo control systems.Product AttributesBrand: YangjieCertifications: RoHS CompliantTechnical SpecificationsPar

Product OverviewThe DGW40N120CTH1A is a high-performance IGBT with a breakdown voltage of 1200V, designed for high frequency switching applications. It features a maximum junction temperature of 175 and a positive temperature coefficient. This IGBT includes a fast and soft recovery anti-parallel diode, making it suitable for resonant converters, uninterruptible power supplies, and welding converters.Product AttributesBrand: 21yangjieCertifications: RoHS CompliantTechnical

Product Overview The MG200HF12LEC2 is a high-speed IGBT module designed for demanding applications. It features NPT technology for low switching losses and high short circuit capability. This module includes an ultra-fast, soft-recovery anti-parallel FWD and boasts low inductance. It is suitable for high-frequency drivers, solar inverters, UPS systems, and electric welding machines. Product Attributes Brand: Yangjie Model: MG200HF12LEC2 S-M291 Compliance: RoHS Revision: 1.2

Product OverviewThe DGW20N65CTL0 is a high-speed, smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for use in soft switching applications, air conditioning systems, and motor drive inverters.Product AttributesBrand: 21yangjieCertifications: RoHSTechnical SpecificationsParameterSymbo

Product OverviewThe MG300HF12TFC2 S-M441 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS systems, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (especially Eoff), a positive temperature coefficient for Vce(sat), high short circuit capability (10s), an integrated ultra-fast & soft recovery anti-parallel FWD, and a low inductance package. The module boasts a maximum

Product OverviewThe GT20N135SRA is a discrete Silicon N-Channel IGBT from Toshiba, designed for high-speed switching applications. It features a 6.5th generation IGBT with an integrated freewheeling diode (FWD), offering low saturation voltage and high junction temperature capabilities. This product is dedicated to voltage-resonant inverter switching, soft switching, induction cooktops, and home appliance applications.Product AttributesBrand: ToshibaModel: GT20N135SRAType:

Product OverviewThe GT30N135SRA is a discrete Silicon N-Channel IGBT designed for voltage-resonant inverter switching, soft switching applications, and induction cooktops and home appliances. This 6.5th generation RC-IGBT integrates a freewheeling diode (FWD) monolithically. It offers high-speed switching with a typical IGBT fall time of 0.25 s and a low saturation voltage of 1.65 V (typ.). The device supports a high junction temperature of 175 C (max) and is sensitive to

Product OverviewThe GT50JR22 is a discrete Silicon N-Channel IGBT designed for current-resonant inverter switching applications. It features a 6.5th generation IGBT with an integrated Freewheeling Diode (FWD), offering high-speed switching capabilities and low saturation voltage. The device is rated for a maximum junction temperature of 175C.Product AttributesBrand: ToshibaStart of Commercial Production: 2012-03Certifications: RoHS CompatibleTechnical SpecificationsCharacteri

Product OverviewThe SPT10N120T1 is a 1200V / 10A Trench Field Stop IGBT designed for high reliability and robust performance. It features Trench-Stop Technology for very tight parameter distribution, high ruggedness, and stable temperature behavior. Key advantages include a short circuit withstand time of 10s, low VCE(SAT), and easy parallel switching capability due to a positive temperature coefficient in VCE(SAT). The device also offers enhanced avalanche capability.Product

Product OverviewThe DGW75N65CTS2A is a high-speed IGBT designed for hard and soft switching applications. It features a maximum junction temperature of 175C, a positive temperature coefficient, and high ruggedness for stable temperature performance. This device is ideal for resonant converters, uninterruptible power supplies, welding converters, and mid to high range switching frequency converters.Product AttributesBrand: YangjieModel: DGW75N65CTS2A S-M384DCertifications:

Product OverviewThe MG150HF12LEC2 S-M338 is a high-speed IGBT module featuring NPT technology, designed for applications requiring high frequency drivers, solar inverters, UPS, and electric welding machines. It offers low switching losses, high short circuit capability, and includes an ultra-fast & soft recovery anti-parallel FWD. The module boasts low inductance and a maximum junction temperature of 150.Product AttributesBrand: YangjieCertifications: RoHS CompliantOrigin:

Product OverviewThe MG200HF12TFC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS systems, and welding machines. It features low Vce(sat) with Trench technology, low switching losses, a positive temperature coefficient for Vce(sat), and high short-circuit capability. The module includes an ultra-fast and soft recovery anti-parallel FWD, a low inductance package, and a maximum junction temperature of 175.Product

Product Overview The VBP16I80 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It features very low VCEsat, low turn-off losses, ultra-low gate charge (Qg), and is avalanche energy rated (UIS). This IGBT is suitable for a wide range of applications including telecommunications power supplies, lighting ballasts, consumer and computing power supplies, industrial applications like welding and battery chargers, renewable energy inverters, and

Product OverviewThe GT40WR21 is a silicon N-Channel IGBT designed for voltage-resonant inverter switching applications. It features 6.5th generation technology, a monolithic RC-IGBT with an integrated freewheeling diode, high-speed switching capabilities, low saturation voltage, and a high junction temperature rating. This product is dedicated to specific inverter applications and should not be used for other purposes.Product AttributesBrand: ToshibaProduct Type: Discrete

Product Overview The VBP165I60 is a 650V Trench and Fieldstop IGBT designed for high-speed switching applications. It offers very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply and industrial applications. Key features include a maximum junction temperature of 175C and avalanche energy rating (UIS). It is widely used in telecommunications (server and telecom power supplies), lighting (HID, fluorescent ballast),