Single FETs, MOSFETs

Product Overview The NJS60R130F is an N-Channel Enhancement Super Junction MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and high-speed switching, this MOSFET features low RDS(ON), low gate charge, and high EAS for enhanced reliability. It is suitable for various applications including AC/DC converters, adaptors, chargers, LED drives, high-frequency circuits, and switching power supplies. Product Attributes Brand:

Product Overview The MD4001X is an N-channel and P-channel enhancement mode MOSFET from Miracle Technology Co., Ltd., featuring advanced Miracle Technology. This device is designed for reliability and ruggedness, with 100% EAS guaranteed. It is particularly well-suited for motor drive applications. Product Attributes Brand: Miracle Technology Co., Ltd. Technology: Miracle Technology Channel Type: N-Channel and P-Channel Mode: Enhancement Mode Reliability: Reliable and Rugged

Product Overview The MJQ29N50 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring Advanced Super Junction Technology for easy-to-control gate switching. This 500V, 29A MOSFET boasts a low on-resistance of 113m (typ.) at VGS = 10V and is 100% avalanche tested. It is ideally suited for applications such as PC power supplies, PD adaptors, LCD & PDP TVs, LED lighting, and single-ended flyback or two-transistor forward topologies. Product Attributes Brand:

Product Overview The MS0005B is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 100V drain-source voltage, 260A continuous drain current, and a low typical on-resistance of 1.6m at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, utilizing advanced trench technology and guaranteed 100% EAS. It is designed for applications such as load switching, quick/wireless charging, motor driving, current switching in DC/DC & AC/DC

MU3008D N-Channel Enhancement Mode MOSFET Product Overview The MU3008D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced trench technology. It offers a drain-source voltage of 30V and a continuous drain current of 40A, with a typical on-resistance (RDS(ON)) of 7.4m at VGS = 10V. This MOSFET is designed for excellent RDS(ON) and low gate charge, with 100% EAS guaranteed. It is suitable for applications such as load switches, PWM

Product Overview The MSB001Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed for high-frequency switching and synchronous applications, including DC/DC converters. It offers a robust and reliable performance with fast switching speeds. This device is available as a Green Device and is 100% EAS guaranteed. Product Attributes Brand: Miracle Technology Co., Ltd. Device Type: N-Channel Enhancement Mode MOSFET Technology: Miracle Technology

Product Overview The MPC09N90 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. designed for power switch circuits in adaptors and chargers. It features a high breakdown voltage of 900V and a continuous drain current of 9A. Key advantages include low ON resistance (RDS(ON) Typ. = 0.9 @ VGS = 10V), low gate charge, low reverse transfer capacitance, and fast switching characteristics. The device is 100% avalanche tested, ensuring reliability in demanding applicatio

Product Overview The MU2N7002T is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This device features a 60V breakdown voltage, a low on-resistance of 1.7 (typ.) at VGS = 10V, and very low leakage current in the off condition. It offers ESD protection of 2KV HBM and is suitable for power switching applications, hard switched and high-frequency circuits, and direct logic-level interface with TTL/CMOS. Product Attributes Brand: Miracle Technology Co., Ltd

Product OverviewThe MPG100N03 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of power switching applications, including adapters and chargers. Key features include a VDS of 30V, ID of 100A, low ON resistance, low reverse transfer capacitances, and a 100% single pulse avalanche energy test.Product AttributesBrand: MNS (www.mns-kx.com)Origin: Shenzhen Minos Technology Co., Ltd.Material:

Product Overview The NTS170N06S is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and reliability, it features low RDS(ON) for reduced power loss and low gate charge for high-speed switching. Its high EAS rating ensures robustness in demanding applications. Typical use cases include DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS)

Product Overview The OSG65R580FF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS series. It leverages charge balance technology to deliver exceptional low on-resistance and reduced gate charge, minimizing conduction and switching losses. This MOSFET is engineered for superior switching performance, robust avalanche capability, and high power density applications, making it ideal for achieving the highest efficiency standards. It is

NIKO-SEM PK6A6BA PDFN 5x6P N-Channel Enhancement Mode Field Effect Transistor The PK6A6BA is a high-performance N-Channel Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers a robust combination of low on-resistance and high current handling capabilities, making it suitable for power switching and amplification circuits. This transistor is Halogen-Free & Lead-Free, adhering to environmental standards. Product Attributes Brand: NIKO

Product OverviewThe MPG80N08 is an 80V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high ESD capability, a high-density cell design for lower Rdson, and good stability with high EAS. The package is designed for effective heat

Product Overview The MJF06N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for easy gate switching control. It offers a 650V breakdown voltage, 6A continuous drain current, and a typical on-resistance of 0.75 at 10V VGS. This MOSFET is 100% avalanche tested and is suitable for applications such as PC power supplies, PD adaptors, LCD & PDP TVs, LED lighting, and switch-mode power supplies like Boost PFC, single

Product Overview The MPF09N90 is an N-Channel Power MOSFET manufactured by Miracle Technology Co., Ltd. It features a 900V breakdown voltage, a continuous drain current of 9A, and a low ON resistance of 0.9 (Typ.) at VGS = 10V. This MOSFET is designed with low gate charge, low reverse transfer capacitance, and fast switching characteristics, making it suitable for power switch circuits in adaptors and chargers. It is 100% avalanche tested for reliability. Product Attributes

Product DescriptionThe MPF20N50 is a silicon N-Channel Enhanced Power MOSFET designed using advanced MOSFET technology. It offers reduced conduction loss, improved switching performance, and enhanced avalanche energy. This transistor is suitable for synchronous rectification, inverter systems, high-speed switching, and general-purpose applications.Key CharacteristicsVDS=500V, ID=20ARDS(ON)

Product Overview The MU4004D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This advanced trench technology MOSFET offers excellent RDS(on) and low gate charge, with a 40V drain-source voltage and 60A continuous drain current. It is guaranteed 100% EAS (Single Pulsed Avalanche Energy) and is suitable for applications such as load switching, PWM applications, and power management. Product Attributes Brand: Miracle Technology Co., Ltd. Technology:

Product DescriptionThe IRF3205 is a silicon N-channel Enhanced MOSFET manufactured using advanced MOSFET technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy capabilities. It is an ideal device for synchronous rectification, inverter systems, high-speed switching, and general-purpose applications.Product AttributesBrand: MNS-KX (implied by www.mns-kx.com)Certifications: RoHS productTechnical

Product Overview The IRFP460PBF is a 500V N-CHANNEL MOSFET from OSEN, designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive, and improved dv/dt capability with high ruggedness. This MOSFET is suitable for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts. Product Attributes Brand: OSEN Publication Order Number: [IRFP460PBF] Revision: 21.2.10 Technical

Product OverviewThe IRF1404 is a 40V N-Channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive, and improved dv/dt capability for enhanced ruggedness. This MOSFET is ideal for use in high-efficiency switch-mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENOrigin: China (implied by URL)Package Type: TO-220Technical SpecificationsParameterSymbolMinTyp